ZXMS6001N3
60V N-channel self protected enhancement mode
INTELLIFET
TM
MOSFET
Summary
Continuous drain source voltage V
DS
= 60V
On-state resistance
675mΩ
Max nominal load current (a)
Min nominal load current (c)
Clamping Energy
1.1A (V
IN
= 5V)
0.7A (V
IN
= 5V)
550mJ
Description
Low input current self protected low side MOSFET intended for Vin=5V
applications. Monolithic over temperature, over current, over voltage
(active clamp) and ESD protected logic level functionality. Intended as
a general purpose switch.
Note:
The tab is connected to the source pin and must be electrically isolated
from the drain pin. Connection of significant copper to the drain pin is
S
recommended for best thermal performance.
S
D
IN
Features
•
•
•
•
•
•
•
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input protection (ESD)
Load dump protection (actively protects load)
Low input current
SOT223
Ordering information
Device
ZXMS6001N3TA
Package
SOT223
Part mark
ZXMS6001
Reel size
(inches)
7
Tape width
(mm)
12 embossed
Quantity
per reel
1,000
© Zetex Semiconductors plc 2008
ZETEX [ ZETEX SEMICONDUCTORS ]
