ZXT10N15DE6
SuperSOT™
15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=15V; R
SAT
= 50m ; I
C
= 4A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
•
•
•
•
•
•
•
•
Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 12A
I
C
=4A Continuous Collector Current
SOT23-6 package
SOT23-6
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
ZXT10N15DE6TA
ZXT10N15DE6TC
DEVICE MARKING
617
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
C
C
B
Top View
C
C
E
10000 units
ISSUE 1 - SEPTEMBER 2000
1