ZXT11N20DF
SuperSOT4™
20V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY
V
CEO
=20V; R
SAT
= 40m ; I
C
= 2.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
•
•
•
•
•
•
•
•
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 5A
I
C
=2.5A Continuous Collector Current
SOT23 package
SOT23
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
E
C
B
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
Top View
ORDERING INFORMATION
DEVICE
ZXT11N20DFTA
ZXT11N20DFTC
DEVICE MARKING
2N0
REEL SIZE
(inches)
7
13
ISSUE 1 - DECEMBER 1999
1
ZETEX [ ZETEX SEMICONDUCTORS ]
