ZXT790AK
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CE
S
I
EBO
V
CE(SAT)
MIN.
-50
-40
-5
TYP.
-70
-60
-8.3
<1
<1
<1
-110
-220
-260
-250
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
V
BE(SAT)
V
BE(ON)
h
FE
300
250
200
150
80
Transition Frequency
Output Capacitance
Switching Times
f
T
C
OBO
t
ON
t
OFF
NOTES
(1)
Measured under pulsed conditions. Pulse width
100
24
35
600
-1.05
-0.9
450
390
350
280
170
-20
-20
-20
-170
-350
-450
-450
-1.15
-1.0
800
MAX. UNIT CONDITIONS
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
I
C
= -100 A
I
C
= -10mA
(1)
I
E
= -100 A
V
CB
= -30V
V
CB
= -30V
V
EB
= -4V
I
C
= -0.5A, I
B
= -5mA
(1)
I
C
= -1A, I
B
= -10mA
(1)
I
C
= -2A, I
B
= -50mA
(1)
I
C
= -3A, I
B
= -300mA
(1)
I
C
= -3A, IB = -300mA
(1)
I
C
= -3A, VCE = -2V
(1)
I
C
= -10mA, V
CE
= -2V
(1)
I
C
= -500mA, V
CE
= -2V
(1)
I
C
= -1A, V
CE
= -2V
(1)
I
C
= -2A, V
CE
= -2V
(1)
I
C
= -3A, V
CE
= -2V
(1)
MHz I
C
= -50mA, V
CE
= -5V
f = 50MHz
pF
ns
ns
V
CB
= -10V, f = 1MHz
(1)
I
C
= -500mA, V
CC
= -10V,
I
B1
= I
B2
= -50mA
300 s; duty cycle
2%.
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
4
ZETEX [ ZETEX SEMICONDUCTORS ]
