ZXTP2014G
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R 1k
I
EBO
V
CE(SAT)
1
-40
-55
-85
-275
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
H
FE
100
100
45
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
ON
t
OFF
* Measured under pulsed conditions. Pulse width
-940
-830
225
200
100
5
120
33
42
636
300 s; duty cycle
2%.
300
MIN.
-180
-180
-140
-7.0
TYP.
-200
-200
-160
-8.0
1
1
-20
-0.5
-20
-0.5
-10
-60
-80
-120
-360
-1040
-930
MAX. UNIT CONDITIONS
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
I
C
=-100 A
I
C
=-1 A, RB 1k
I
C
=-10mA*
I
E
=-100 A
V
CB
=-150V
V
CB
=-150V, T
amb
=100 C
V
CB
=-150V
V
CB
=-150V, T
amb
=100 C
V
EB
=-6V
I
C
=-0.1A, I
B
=-5mA*
I
C
=-0.5A, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
I
C
=-3A, I
B
=-300mA*
I
C
=-3A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-3A, V
CE
=-5V*
I
C
=-10A, V
CE
=-5V*
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
pF
ns
V
CB
=-10V, f=1MHz*
I
C
=-1A, V
CC
=-50V,
I
B1
= -I
B2
=-100mA
ISSUE 1 - JUNE 2005
4
ZETEX [ ZETEX SEMICONDUCTORS ]
