1N4148
SMALL-SIGNAL DIODE
Reverse Voltage 100 Volts
DO-35
Peak Forward Current - 150mA
.022 (0.56)
.018 (0.46)
1.02 (26.0)
MIN.
.165 (4.2)
MAX.
FEATURES
* Silicon Epitaxial Planar Diode
* Fast switching diode.
.079 (2.0)
DIA.
MAX.
1.02 (26.0)
MIN.
MECHANICAL DATA
Case :
DO-35 Glass Case
Weight :
approx. 0.13 gram
*Dimensions in inches and (millimeters)
MAXIMUM RATINGS THERMAL CHARACTERISTICS
( T
A
=25 C unless otherwise noted )
PARAMETER
Continuous Reverse Voltage
Peak Reverse Voltage
Average Rectified Current
Half Wave Rectification with Resistive Load at Tamb = 25
o
C
Surge Forward Current at t < 1s and Tj = 25
o
C
Power Dissipation at Tamb = 25
o
C
(1)
(1)
o
SYMBOLS
V
R
V
RM
I
F( AV )
I
FSM
P
tot
R
JA
VALUE
75
100
150
500
500
350
175
-65 to +175
UNITS
Vdc
Vdc
mAdc
mAdc
mW
o
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature
C/W
o
o
T
J
T
STG
o
C
C
ELECTRICAL CHARACTERISTICS
( T
A
=25 C unless otherwise noted )
PARAMETER
TEST CONDITION
( V
R
=20Vdc )
( V
R
=75Vdc )
o
( V
R
=20Vdc, T
J
=150 C )
( I
R
=100uAdc )
( I
F
=10mAdc )
( V
R
=0, f=1.0MHz )
( t
p
=0.1us, Rise time < 30ns
f
p
=5 to 100 kH
Z
( I
F
=10mA, I
R
=1mA, V
R
=6V, R
L
=100 )
SYMBOL
MIN.
-
-
-
100
-
-
-
TYP.
-
-
-
-
-
-
-
MAX.
25
5
50
-
1.0
4
2.5
UNITS
nAdc
uAdc
uAdc
Vdc
Vdc
pF
V
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Junction Capacitance
Voltage Rise when Switching ON
( tested with 50 mA Pulses )
I
R
V
( BR )
V
F
C
J
V
FR
Reverse Recovery Time
t
rr
-
-
4
nS
REV. : 0
Zowie Technology Corporation
ZOWIE [ ZOWIE TECHNOLOGY CORPORATION ]
