LL4148, LL4448
SILICON EPITAXIAL PLANAR DIODES
Reverse Voltage 100 Volts
SOD-80
Peak Forward Current - 500mA
Cathode Indification
FEATURES
0.063(1.60)
0.055(1.40)
0.012(0.30)
0.146(3.70)
0.130(3.30)
* Electrical data identical with the devices 1N4148
* and 1N4448 respectively
* Extreme fast switches
MECHANICAL DATA
Glass case
Mini MELF / SOD 80
JEDEC DO 213AA
technical drawings
accarding to DIN
specifications
Case :
Mini MELF SOD-80 Glass Case
Weight :
approx. 0.05 gram
*Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS
( T
J
=25 C )
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage
Peak Forward Surge Current
Repetitive Peak Forward Current
Forward Current
Average Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
V
R
= 0
tp = 1 us
Test Conditions
SYMBOL
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
T
J
T
STG
VALUE
100
75
2
500
300
150
500
175
-65 to +175
o
o
UNIT
V
V
A
mA
mA
mA
mW
o
o
C
C
MAXIMUM THERMAL RESISTANCE
( T
J
=25 C )
PARAMETER
Junction Ambient
TEST CONDITIONS
on PC Board 50mm x 50mm x 1.6mm
SYMBOL
R
JA
o
VALUE
500
UNIT
K/W
MAXIMUM THERMAL RESISTANCE
( T
J
=25 C )
PARAMETER
TEST CONDITIONS
( I
F
= 5 mA )
( I
F
= 50 mA )
( I
F
= 100 mA )
( Type : LL4448 )
( Type : LL4148 )
( Type : LL4448 )
SYMBOL
V
F
MIN.
0.62
-
-
-
-
-
100
-
45
-
-
TYP.
-
0.86
0.93
-
-
-
-
-
-
-
-
MAX.
0.72
1.0
1.0
25
50
5.0
-
4
-
8
4
UNIT
Volts
nAdc
uAdc
Volts
pF
%
nS
Forward Voltage
Reverse Current
( V
R
= 20 V )
o
( V
R
= 20 V, T
J
=150 C )
( V
R
= 75 V )
( I
R
= 100 uA, tp/T = 0.01, tp = 0.3 ms )
( V
R
= 0, f=1.0MHz, V
HF
= 50mV )
( V
HF
= 2 V, f = 100MH
Z
)
( I
F
= I
R
= 10mA, I
R
= 1mA )
( I
F
= 10mA, V
R
= 6 V, I
R
= 0.1 X I
R
, R
L
= 100 )
I
R
V
(BR)
C
D
r
t
rr
Breakdown Voltage
Diode Capacitance
Rectification Efficiency
Reverse Recovery Time
REV. : 0
Zowie Technology Corporation
ZOWIE [ ZOWIE TECHNOLOGY CORPORATION ]
