Zowie Technology Corporation
General Purpose Transistor
PNP Silicon
3
COLLECTOR
3
BASE
1
2
MMBT2907A
1
SOT-23
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-60
-60
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
DEVICE MARKING
MMBT2907A=2F
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
(3)
( I
C
= -1.0mAdc, I
B=0
)
Collector-Base Breakdowe Voltage
( I
C
= -10uAdc, I
E=0
)
Emitter - Base Breakdowe Voltage
( I
E
= -10 uAdc, I
C
=0 )
Collector Cutoff Current
( V
CE
= -30 Vdc, V
BE (off)
= -0.5 Vdc )
Collector Cutoff Current
( V
CB
= -50 Vdc, I
E
=0 )
o
( V
CB
= -50 Vdc, I
E
=0, T
A
=125 C )
Base Cutoff Current ( V
CE
=60 V, V
EB (off)
=3.0 Vdc )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
-60
-60
-5.0
-
-
-
-
-50
Vdc
Vdc
Vdc
nAdc
I
CBO
-
-
-
-0.010
-10
-50
uAdc
I
B
nAdc
2.0%.
REV. : 0
Zowie Technology Corporation
ZOWIE [ ZOWIE TECHNOLOGY CORPORATION ]
