Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
Lead free product
3
BASE
1
2
2
EMITTER
1
COLLECTOR
3
MMBT3904G
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
SOT-23
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
DEVICE MARKING
MMBT3904=1AM
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( I
C
=1.0mAdc, I
B
=0 )
Collector-Base Breakdowe Voltage
( I
C
=10 uAdc, I
E
=0 )
Emitter-Base Breakdowe Voltage
( I
E
=10 uAdc, I
C
=0 )
Base Cutoff Current
( V
CE
=30 Vdc, V
EB
=3.0 Vdc )
Collector Cutoff Current
( V
CE
=30 Vdc, V
EB
=3.0 Vdc )
(3)
V
(BR)CEO
40
-
Vdc
V
(BR)CBO
60
-
Vdc
V
(BR)EBO
6.0
-
Vdc
I
BL
-
50
nAdc
I
CEX
-
50
nAdc
REV. 0
Zowie Technology Corporation
ZOWIE [ ZOWIE TECHNOLOGY CORPORATION ]
