Zowie Technology Corporation
High Voltage Transistor
PNP Silicon
3
BASE
1
2
2
EMITTER
COLLECTOR
3
MMBT5401
1
SOT-23
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-150
-160
-5.0
-500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
DEVICE MARKING
MMBT5401=2L
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( I
C
= 1.0mAdc, I
B
= 0 )
V
(BR)CEO
-150
-
Vdc
Collector-Base Breakdowe Voltage
( I
C
= -100 uAdc, I
E
= 0 )
V
(BR)CBO
-160
-
Vdc
Emitter-Base Breakdowe Voltage
( I
E
= -10 uAdc, I
C
= 0 )
Collector Cutoff Current
( V
CE
= -120 Vdc, I
E
= 0 )
( V
CE
= -120 Vdc, I
E
= 0, T
A
= 100
o
C )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
V
(BR)EBO
-5.0
-
Vdc
I
CES
-
-
-50
-50
nAdc
uAdc
REV. : 0
Zowie Technology Corporation
ZOWIE [ ZOWIE TECHNOLOGY CORPORATION ]
