Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
3
BASE
1
2
2
EMITTER
COLLECTOR
3
MMBT5550
1
SOT-23
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
140
160
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
DEVICE MARKING
MMBT5550=M1F
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( I
C
=1.0mAdc, I
B
=0 )
Collector-Base Breakdowe Voltage
( I
C
=100 uAdc, I
E
=0 )
Emitter-Base Breakdowe Voltage
( I
E
=10 uAdc, I
C
=0 )
Base Cutoff Current
( V
CE
=100 Vdc, I
E
=0 )
( V
CE
=100 Vdc, I
E
=0, T
A = 100
o
C
)
Collector Cutoff Current
( V
EB
=4.0 Vdc, I
C
=0 )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width = 300 uS, Duty Cycle = 2.0%.
REV. : 0
Zowie Technology Corporation
(3)
V
(BR)CEO
140
-
Vdc
V
(BR)CBO
160
-
Vdc
V
(BR)EBO
6.0
-
Vdc
I
CBO
-
-
-
100
100
50
nAdc
uAdc
nAdc
I
EBO
ZOWIE [ ZOWIE TECHNOLOGY CORPORATION ]
