欢迎访问ic37.com |
会员登录 免费注册
发布采购

SSCD104RH 参数 Datasheet PDF下载

SSCD104RH图片预览
型号: SSCD104RH
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基二极管 [Schottky Barrier Diode]
分类和应用: 肖特基二极管
文件页数/大小: 2 页 / 215 K
品牌: ZOWIE [ ZOWIE TECHNOLOGY CORPORATION ]
 浏览型号SSCD104RH的Datasheet PDF文件第2页  
ZOWIE
SSCD104RH
Schottky Barrier Diode
(40V / 1.0A)
OUTLINE DIMENSIONS
FEATURES
* Halogen-free type
* Compliance to RoHS product
* Lead less chip form, no lead damage
* Low power loss, High efficiency
* High current capability, low VF
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Case : 1206
1.90 ± 0.2
Unit : mm
1.60
Typ.
3.40 ± 0.2
0.05
R0.
40
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
0.70 ± 0.2
0.70 ± 0.2
Equivalent : SOD-123
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.012 gram
MARKING
Cathode mark
Amps class
Voltage class
+ 0.2
0.96
- 0.1
A4
R
.
Low IR
Halogen-free type
PACKING
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 4 reels per box
* 6 boxes per carton
Absolute Maximum Ratings (Ta = 25 C)
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
Conditions
Rating
40
1.0
Unit
V
A
A
8.3ms single half sine-wave
20
-55 to +125
o
C
-55 to +150
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
Conditions
Min.
Typ.
Max.
Unit
o
Forward voltage
V
F
I
F
= 1.0A
-
0.49
0.55
V
Repetitive peak reverse current
Junction capacitance
I
RRM
C
j
R
th(JA)
V
R
= Max. V
RRM
, Ta = 25
o
C
V
R
= 4V, f = 1.0 MHz
Junction to ambient(Note 1)
Junction to lead(Note 1)
-
-
-
-
0.008
110
88
28
0.05
-
-
-
o
mA
pF
C/W
C/W
Thermal resistance
R
th(JL)
NOTES : (1) Mounted on P.C. board with 0.2 x 0.2"(5.0 x 5.0mm) copper pad areas.
(2)
Preliminary draft.
o
REV. 0
2011/03