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AT45DB041E-SSHN-B - 闪存, 串行,代理商ADESTO代理商MICROCHIP惠利晟科技专卖店0755-82558247

类别:公司动态 发布时间:2018-3-14  阅读:41 发布企业: 斐熙电子香港有限公司
摘要:AT45DB041E-SSHN-B - 闪存, 串行, 4 Mbit, 2048 页 x 256字节, 85 MHz, SPI, SOIC, 8 引脚


闪存, 串行, 4 Mbit, 2048 页 x 256字节, 85 MHz, SPI, SOIC, 8 引脚 AT45DB041E-SSHN-B is a 1.65V minimum, serial-interface sequential access Flash Memory, ideally suited for a wide variety of digital voice, image, program code and data storage applications. It also supports the RapidS serial interface for applications requiring very high speed operation. Its 4194304 bits of memory are organized as 2048 pages of 256 bytes or 264 bytes each. In addition to the main memory, it also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a systems ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory and E2 PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.

Serial Peripheral Interface (SPI) compatible

Continuous read capability through entire array

Low-power read option up to 15MHz

User configurable page size

Two fully independent SRAM data buffers (256/264 bytes)

Flexible programming options

Flexible erase options

Program and Erase Suspend/Resume

20 Years data retention

Low-power dissipation



存储器容量:4Mbit闪存配置:2048 页 x 256字节时钟频率:85MHz芯片接口类型:SPI封装类型:SOIC针脚数:8引脚存取时间:-电源电压最小值:1.65V电源电压最大值:3.6V工作温度最小值:-40°C工作温度最高值:85°C封装:剪切带产品范围:3V Serial NOR Flash MemoriesRoHS邻苯二甲酸酯合规:有MSL:MSL 1 -无限制