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AT45DB041E-SSHN-B - 闪存, 串行,代理商ADESTO代理商MICROCHIP惠利晟科技专卖店0755-82558247

时间:2018-3-14,阅读:103,发布企业:斐熙电子香港有限公司, 资讯类别:会员资讯
公司:
斐熙电子香港有限公司
联系人:
周小姐
手机:
15013458493
电话:
0755-82887527
传真:
0755-82799748
QQ:
1195481721 1192955854 1326032818 和我即时交谈 和我即时交谈 和我即时交谈
地址:
福田区振中路新亚洲电子商城二期N3B062柜台(即3楼B区扶手电梯侧)
摘要:AT45DB041E-SSHN-B - 闪存, 串行, 4 Mbit, 2048 页 x 256字节, 85 MHz, SPI, SOIC, 8 引脚

AT45DB041E-SSHN-B -

闪存, 串行, 4 Mbit, 2048 页 x 256字节, 85 MHz, SPI, SOIC, 8 引脚

AT45DB041E-SSHN-B is a 1.65V minimum, serial-interface sequential access Flash Memory, ideally suited for a wide variety of digital voice, image, program code and data storage applications. It also supports the RapidS serial interface for applications requiring very high speed operation. Its 4194304 bits of memory are organized as 2048 pages of 256 bytes or 264 bytes each. In addition to the main memory, it also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a systems ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory and E2 PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.

  • Serial Peripheral Interface (SPI) compatible

  • Continuous read capability through entire array

  • Low-power read option up to 15MHz

  • User configurable page size

  • Two fully independent SRAM data buffers (256/264 bytes)

  • Flexible programming options

  • Flexible erase options

  • Program and Erase Suspend/Resume

  • 20 Years data retention

  • Low-power dissipation

应用

                                   计算机和计算机周边

:
4Mbit
:
2048 页 x 256字节
:
85MHz
:
SPI
:
SOIC
:
8引脚
:
-
:
1.65V
:
3.6V
:
-40°C
:
85°C
:
剪切带
:
3V Serial NOR Flash Memories
:
:
MSL 1 -无限制


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