IXFY26N30X3，IXFA26N30X3，IXFP26N30X3新品关注雷智腾电子全球首供！

IXFY26N30X3，IXFA26N30X3，IXFP26N30X3产品特性：

International Standard Packages

Low RDS(ON) and QG  Avalanche Rated

Low Package Inductance

High Power Density

Easy to Mount

Space Savings

IXFY26N30X3，IXFA26N30X3，IXFP26N30X3产品主要应用：

witch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

产品规格说明：

Product CategoryPower MOSFET

ConfigurationSingle

Channel ModeEnhancement

Channel TypeN

Number of Elements per Chip1

Maximum Drain Source Voltage (V)300

Maximum Gate Source Voltage (V)±20 Maximum Gate Source Voltage describes dc voltage between the gate and source terminals.

Maximum Continuous Drain Current (A)26

Maximum Drain Source Resistance (mOhm)66@10V

Typical Gate Charge @ Vgs (nC)22@10V

Typical Gate Charge @ 10V (nC)22

Typical Input Capacitance @ Vds (pF)1465@25V

Maximum Power Dissipation (mW)170000

Typical Fall Time (ns)19

Typical Rise Time (ns)25

Typical Turn-Off Delay Time (ns)80

Typical Turn-On Delay Time (ns)23

Minimum Operating Temperature (°C)-55

Maximum Operating Temperature (°C)150

Pin Count3

Supplier PackageTO-252AA

MountingSurface Mount

Package Height2.38(Max)

Package Length6.73(Max)

Package Width6.22(Max)

PCB changed2

TabTab

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