2SC536
2SC536
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92
1. EMITTER
400 mW (Tamb=25℃)
2. COLLECTOR
3. BASE
1 2 3
Collector current
I
CM
:
100 mA
Collector-base voltage
V
(BR)CBO
:
40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
Cob
unless otherwise specified)
Test
conditions
MIN
40
30
5
1
1
60
960
0.5
100
3.5
V
MHz
pF
TYP
MAX
UNIT
Ic=100µA, I
E
=0
Ic=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=6V, I
C
=1mA
V
CE
=6V, f=1MHz
V
V
V
µA
µA
CLASSIFICATION OF h
FE
Rank
Range
D
60-120
E
100-200
F
160-320
G
280-560
H
480-960
WEJ ELECTRONIC CO.
Http:// www.wej.cn
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