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13005 PDF Datasheet浏览和下载

型号.:
13005
PDF下载:
下载PDF文件
内容描述:
晶体管( NPN )
[Transistor (NPN) ]
文件大小:
155 K
文件页数:
3 Pages
品牌Logo:
品牌名称:
未知厂家 [ ETC ]
PCB Prototype
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  • 厂家
  • 批号
  • 数量
  • 封装
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  • 操作
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Transistor (NPN)
HSiN Semiconductor Pte Ltd
13005
www.hsin.com.sg
13005
TRANSISTOR( NPN
TO—220
FEATURES
Power dissipation
P
CM
:
1.5 W(Tamb=25℃)
Collector current
I
CM:
4A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
t
t
1.BASE
2.COLLECTOR
3.EMITTER
123
unless
Test
otherwise
specified)
TYP
MAX
UNIT
V
V
V
1000
100
1000
µA
µA
µA
conditions
MIN
700
400
9
Ic= 1000 µA,I
E
=0
Ic= 10
mA,I
B
=0
I
E
= 1000 µA,I
C
=0
V
CB
= 700 V I
E
=0
V
CE
= 400 V I
B
=0
V
EB
=
9
V I
C
=0
V
CE
= 5 V, I
C
= 1000mA
I
C
=2000m A,I
B
=500 mA
I
C
=2000m A, I
B
= 500mA
V
CE
=10 V, IC=500mA
10
40
0.6
1.6
V
V
MHz
0.9
4
µs
µs
T
f = 1MHz
I
B1
=-I
B2
=0.4A, I
C
=2A
5
f
s
V
CC
=120V
CLASSIFICATION OF h
FE
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40