8050SS PDF Datasheet浏览和下载

型号.:
8050SS
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内容描述:
通用晶体管
[General purpose transistors ]
文件大小:
391 K
文件页数:
3 Pages
品牌Logo:
品牌名称:
未知厂家 [ ETC ]
PCB Prototype
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050SS
TRANSISTOR( NPN
TO—92
FEATURES
Power dissipation
P
CM
:
Collector current
I
CM
: 1.5
A
Collector-base voltage
V
(BR)CBO
: 40
V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
1
DC current gain
h
FE
2
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
V
CE
= 1 V , I
C
=800 mA
I
C
= 800 mA, I
B
= 80 mA
I
C
= 800mA, I
B
= 80 mA
V
CE
= 10 V, I = 50mA
C
Transition frequency
40
0.5
1.2
V
V
1
W
(Tamb=25℃)
1.EMITTER
2. COLLECTOR
3. BASE
1 2 3
unless
Test
otherwise
MIN
40
25
5
specified)
TYP
MAX
UNIT
V
V
  V
0.1
0.1
0.1
 μA
 μA 
 μA
conditions
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
B
=0
I
C
=0
Ic= 100
μA ,
I
C
= 0.1
mA ,
I
E
= 100
μA,
V
CB
= 40
V
CE
= 20
V
EB
= 5
V,
V,
V,
V
CE
= 1 V , I
C
= 100 mA
85
300
f
T
100
f =30 MHz
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
B
85-160
C
120-200
D
160-300