13003 PDF Datasheet浏览和下载

型号.:
13003
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内容描述:
晶体管( NPN )
[Transistor (NPN) ]
文件大小:
125 K
文件页数:
3 Pages
品牌Logo:
品牌名称:
未知厂家 [ ETC ]
PCB Prototype
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Transistor (NPN)
HSiN Semiconductor Pte Ltd
13003
www.hsin.com.sg
13003
TRANSISTOR( NPN
TO—220
FEATURES
Power dissipation
P
CM
:
1.5
W(Tamb=25℃)
Collector current
I
CM
:
1.5
A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
1
DC current gain
h
FE
2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
t
f
t
s
V
CE
= 10 V, I
C
= 0.5 mA
1.BASE
2.COLLECTOR
3.EMITTER
123
unless
Test
otherwise
specified)
TYP
MAX
UNIT
V
V
V
1000
500
1000
8
5
1
1.2
3
5
0.5
2.5
V
V
V
MH
Z
µS
µS
40
µA
µA
µA
conditions
MIN
700
400
9
Ic= 1000 µA,I
E
=0
Ic= 10
mA,I
B
=0
I
E
= 1000 µA,I
C
=0
V
CB
= 700 V I
E
=0
V
CE
= 400 V I
B
=0
V
EB
=
9
V I
C
=0
V
CE
= 2 V, I
C
= 0.5 A
I
C
=1000m A,I
B
=250 mA
I
C
=1000m A, I
B
= 250mA
I
E
= 2000 mA
Ic=100mA,V
CE
=10V
f=1MH
Z
Vcc=100V, Ic=1A
I
B1
=-I
B2
=0.2A
CLASSIFICATION OF h
FE
(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40