T2N4401
Low Power Bipolar Transistors
Electrical Characteristics (T
a
= 25°C unless otherwise specified)
Characteristic
DC Current Gain
I
C
= 0.1mA, V
CE
= 1V
I
C
= 1mA, V
CE
= 1V
I
C
= 10mA, V
CE
= 1V
I
C
= 150mA, V
CE
= 1V*
I
C
= 500mA, V
CE
= 2V*
Dynamic Characteristics
Small Signal Current Gain
I
C
= 1mA, V
CE
= 10V, f = 1KHz
Input Impedance
I
C
= 1mA, V
CE
= 10V, f = 1KHz
Characteristic
Voltage Feedback Ratio
I
C
= 1mA, V
CE
= 10V, f = 1KHz
Output Impedance
I
C
= 1mA, V
CE
= 10V, f = 1KHz
Collector-Base Capacitance
V
CB
= 5V, I
E
= 0, f = 100KHz
V
CB
= 10V, I
E
= 0, f = 140KHz
Emitter-Base Capacitance
V
EB
= 0.5V, I
C
= 0, f = 100kHz
Transition Frequency
I
C
= 20mA, V
CE
= 10V, f = 100MHz
Switching Characteristics
V
CC
= 30V, V
EB
= 2V
I
C
= 150mA, I
B1
= 15mA
Delay Time
Rise Time
V
CC
= 30V, I
C
= 150mA
I
B1
= I
B2
= 15mA
Storage time
Fall Time
*Pulse Test : Pulse Width:
≤300µs,
Duty
≤2.0%
t
s
t
f
<225
<30
ns
t
d
t
r
<15
<20
ns
h
fe
h
ie
Symbol
h
re
h
oe
40 - 500
1.0 - 15
2N4401
0.1 - 8.0
1.0 - 30
<6.5
-
pF
C
eb
<30
-
kΩ
Unit
x10-4
µΩ
Symbol
T2N4401
Unit
h
FE
>20
>40
>80
100 - 300
>40
-
C
cb
f
T
>250
MHz
Page 3
10/04/06 V1.0
ETC [ ETC ]
