Transys
Electronics
L I M I T E D
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
2N5679
2N5680
PNP
TO-39
2N5681
2N5682
NPN
TO-39
These Are High Voltage & High Current, General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
2N5679
2N5681
100
100
2N5680
2N5682
120
120
UNITS
V
V
V
A
A
W
mW/deg C
W
mW/deg C
deg C
VCEO
Collector -Emitter Voltage
VCBO
Collector -Base Voltage
VEBO
4.0
Emitter -Base Voltage
IC
1.0
Collector Current Continuous
IB
0.5
Base Current
PD
1.0
Power Dissipation @Ta=25 degC
5.7
Derate Above 25deg C
PD
10
Power Dissipation @Tc=25 degC
57
Derate Above 25deg C
Tj, Tstg
-65 to +200
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Rth(j-c)
17.5
Junction to Case
Rth(j-a)
175
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
2N5679
2N5681
VCEO(sus) IC=10mA,IB=0
>100
Collector -Emitter Voltage
ICBO
VCB=100V, IE=0
<1.0
Collector-Cut off Current
VCB=120V, IE=0
-
ICEO
VCE=70V, IB=0
<10
VCE=80V, IB=0
-
ICEX
VCE=100V,VEB=1.5V
<1.0
VCE=120V,VEB=1.5V
-
TC=150 deg C
VCE=100V,VEB=1.5V
VCE=120V,VEB=1.5V
VEB=4V, IC=0
deg C/W
deg C/W
2N5680
2N5682
>120
-
<1.0
-
<10
-
<1.0
UNITS
V
uA
uA
uA
uA
uA
uA
Emitter-Cut off Current
IEBO
<1.0
-
<1.0
-
<1.0
<1.0
mA
mA
uA
ETC [ ETC ]
