BGB550
Medium power broadband amplifier
Bias, 3
C, 4
NE
W
MMIC
Features and Benefits
Features and Benefits
-
-
mirror biased RF transistor
mirror biased RF transistor
-
-
collector current up to
350mA
collector current up to
350mA
-
-
low operation voltage V
CC
< 3V
low operation voltage V < 3V
CC
L
ext
~ nH
internal circuit
MP:
now
RFin
E, 2,5
B,1
-
-
high output power & linearity
high output power & linearity
-
-
input matching improved by L
ext
input matching improved by L
-
-
SCT595 package
SCT595 package
frequency
900 MHz
1.8 GHz
900 MHz
1.8 GHz
900 MHz
1.8 GHz
900 MHz
1.8 GHz
Unit
dB
dB
dBm
dBm
Value
17 (22)
11 (16)
1.3
1.5
19
19
28
28
ext
Vd = 2.0V, Id = 100mA
Symbol
Parameter
IS21I
2
/ (G
MA
)
Power Gain / (max. available)
NF
P-1dB
WS DS M 1
26.04.2002
Page 1
Noise Figure
Output Compression Point
Output Third Order Intercept Point
OIP3
ETC [ ETC ]
