02DZ2.0~02DZ24
TOSHIBA Diode Silicon Epitaxial Planar Type
02DZ2.0~02DZ24
Constant Voltage Regulation Applications
Reference Voltage Applications
Unit in mm
ꢀ Small Package
ꢀ Nominal voltage tolerance about ±2.5%
(2.0V~24V)
Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation
Symbol
Rating
Unit
P*
Tj
200
125
mW
°C
Junction temperature
Storage temperature range
Tstg
−55~125
°C
*:
Mounted on a glass epoxy circuit board of 20 × 20mm, pad
dimension of 4 × 4mm.
JEDEC
EIAJ
1-1E1A
TOSHIBA
Weight: 4.5mg
Electrical Characteristics
(See Page 2~3)
Marking
Example1: 02DZ2.4-×
Example2: 02DZ24-×
Pin Assignment (top view)
961001EAA2
• TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2000-09-13 1/6