03N60C3现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

AP03N70P

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Dynamic dv/dt Rating

BV_DSS600/650/700V

D

▼ Repetitive Avalanche Rated

▼ Fast Switching

R_DS(ON)

I_D

3.6Ω

3.3A

G

▼ Simple Drive Requirement

S

Description

AP03N70 series are specially designed as main switching devices for

universal 90~265VAC off-line AC/DC converter applications.TO-220 type

provide high blocking voltage to overcome voltage surge and sag in the

toughest power system with the best combination of fast

G

D

TO-220

S

switching,ruggedized design and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial

applications. The device is suited for switch mode power supplies ,DC-

AC converters and high current high speed switching circuits.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V

V_DS

V_GS

Drain-Source Voltage

- /A/H

600/650/700

Gate-Source Voltage

V

± 30

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

3.3

A

2.1

13.2

A

P_D@T_C=25℃

Total Power Dissipation

45

W

Linear Derating Factor

Single Pulse Avalanche Energy²

0.36

W/℃

mJ

A

E_AS

I_AR

85

Avalanche Current

3.3

E_AR

T_STG

T_J

Repetitive Avalanche Energy

Storage Temperature Range

Operating Junction Temperature Range

3.3

mJ

℃

-55 to 150

Thermal Data

Symbol

Parameter

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Value

2.8

Unit

℃/W

Rthj-c

Max.

Rthj-a

62

Data & specifications subject to change without notice

200303032

AP03N70P

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

BV_DSS

Parameter

Test Conditions

V_GS=0V, I_D=1mA

Min. Typ. Max. Units

Drain-Source Breakdown Voltage

/ -

600

650

700

-

V

V_GS=0V, I_D=1mA

/ A

/ H

ΔBV_DSS/ΔT_j

R_DS(ON)

Breakdown Voltage Temperature Coefficient Reference to 25℃, I_D=1mA

-

2

-

0.6

-

3.6

4

V/℃

Ω

Static Drain-Source On-Resistance

Gate Threshold Voltage

V_GS=10V, I_D=1.6A

V_DS=V_GS, I_D=250uA

V_DS=10V, I_D=1.6A

V_DS=600V, V_GS=0V

V_DS=480V_,V_GS=0V

V_GS(th)

-

V

g_fs

Forward Transconductance

2

-

S

Drain-Source Leakage Current (T=25^oC)

I_DSS

uA

nA

nC

ns

pF

-

10

100

j

Drain-Source Leakage Current (T=150^oC)

-

j

I_GSS

Q_g

Gate-Source Leakage

Total Gate Charge³

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time³

Rise Time

V =

-

± 30V

±100

GS

I_D=3.3A

11.4

3.1

4.2

8.4

6

-

Q_gs

Q_gd

t_d(on)

t_r

V_DS=480V

V_GS=10V

V_DD=300V

I_D=3.3A

t_d(off)

t_f

Turn-off Delay Time

Fall Time

R_G=10Ω,V_GS=10V

R_D=91Ω

17.7

5.9

600

45

4

-

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_GS=0V

V_DS=25V

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

A

V

I_S

Continuous Source Current ( Body Diode )

Pulsed Source Current ( Body Diode )¹

Forward On Voltage³

V_D=V_G=0V , V_S=1.5V

-

3.3

13.2

1.5

I_SM

V_SD

T_j=25℃, I_S=3.3A, V_GS=0V

Notes:

1.Pulse width limited by safe operating area.

2.Starting T_j=25^oC , V_DD=50V , L=15mH , R_G=25Ω , I_AS=3.3A.

3.Pulse width <300us , duty cycle <2%.

Ordering Code

AP03N70P- X : X Denote BV_DSSGrade

Blank = BV_DSS600V

A

= BV_DSS650V

= BV_DSS700V

H

AP03N70P

4

3

2

1

0

V _G=10V

V _G=5.0V

T _C=25 ^oC

V _G=10V

V _G=6.0V

T _C=150 ^oC

2

1

0

V _G=4.5V

V

_G=5.0V

V

_G=4.0V

_G=3.5V

V _G=4.5V

_G=4.0V

V

0

5

10

15

20

25

0

5

10

15

20

25

V _DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3

1.2

1.1

1

I _D=3.5A

V _G=10V

2.5

2

1.5

1

0.9

0.8

0.5

0

-50

0

50

100

150

-50

0

50

100

150

T _j, Junction Temperature ( ^oC)

T

, Junction Temperature ( ^oC)

j

Fig 3. Normalized BV_DSSv.s. Junction

Temperature

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

AP03N70P

50

40

30

20

10

0

3.5

3

2.5

2

1.5

1

0.5

0

25

50

75

100

125

150

0

50

100

150

T _c, Case Temperature ( ^oC )

Tc , Case Temperature( ^oC)

Fig 5. Maximum Drain Current v.s.

Case Temperature

Fig 6. Typical Power Dissipation

1

100

10

1

DUTY=0.5

0.2

0.1

10us

0.1

0.05

100us

0.02

0.01

P_DM

t

1ms

T

SINGLE PULSE

0

10ms

Duty factor = t/T

T _c=25 ^oC

Peak T_j= P_DMx R_thjc+ T_C

100ms

Single Pulse

0.01

0

0.00001

0.0001

0.001

0.01

0.1

1

10

1

10

100

1000

10000

V _DS(V)

t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area

Fig 8. Effective Transient Thermal Impedance

AP03N70P

f=1.0MHz

10000

100

1

16

14

12

10

8

I _D=3.3A

V _DS=480V

Ciss

6

Coss

Crss

4

2

0

1

5

9

13

17

21

25

29

0

2

4

6

8

10

12

14

16

V _DS(V)

Q _G, Total Gate Charge (nC)

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

5

4

3

2

1

0

100

10

T _j= 150 ^oC

T _j= 25 ^oC

1

0.1

0.01

-50

0

50

100

150

0.1

0.3

0.5

0.7

0.9

1.1

1.3

1.5

T _j, Junction Temperature ( ^oC)

V _SD(V)

Fig 11. Forward Characteristic of

Reverse Diode

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

AP03N70P

V_DS

R_D

90%

V_DS

TO THE

OSCILLOSCOPE

D

S

0.5x RATED V_DS

R_G

G

10%

V_GS

+

-

10V

V_GS

t_r

t_d(off)

t_d(on)

t_f

Fig 13. Switching Time Circuit

Fig 14. Switching Time Waveform

V_G

V_DS

Q_G

TO THE

OSCILLOSCOPE

D

S

10V

0.8 x RATED V_DS

Q_GD

Q_GS

G

V_GS

+

1~ 3 mA

I_G

-

I_D

Q

Charge

Fig 15. Gate Charge Circuit

Fig 16. Gate Charge Waveform

型号:	03NB3S
生命周期：	Active
IHS 制造商：	DELTA ELECTRONICS INC
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8536.69.40.30
Factory Lead Time：	24 weeks
风险等级：	5.75
其他特性：	STANDARDS: CSA; UL; VDE
连接器类型：	MAINS POWER CONNECTOR
联系完成配合：	NOT SPECIFIED
触点性别：	MALE
耦合类型：	SNAP
DIN 符合性：	NO
IEC 符合性：	YES
MIL 符合性：	NO
电源连接器额定值：	3A, 115/250VAC
制造商序列号：	NB
安装类型：	PANEL
选件：	GENERAL PURPOSE
端接类型：	SOLDER
触点总数：	3
Base Number Matches：	1

电子百科

产品导航

产品型号03N60C3的概述

产品型号03N70P的Datasheet PDF文件预览

03N60C3相关产品

03N60C3相关文章

IC37:专业IC行业平台