10N65供应商报价哪里找芯片批发报价原理和应用中文资料-中国IC网-芯三七

当前位置：IC37首页_>1字母起始型号索引_>1字母起始型号索引第398页更新时间：2025-01-20 17:27:14

产品型号10N65的概述

芯片10N65的概述及详细参数分析一、概述 10N65是业界广泛应用的一款N沟道MOSFET（场效应晶体管），其重要性主要体现在高效能电源转换和开关控制方面。这款MOSFET在电源管理、电动机驱动及其他高压高功率应用中展现出良好的性能，尤其适合用于工业设备、家电及汽车电子等领域。10N65得名于其额定电压为650V和额定电流为10A，其电气特性和热性能使其在这些应用中占据了一席之地。二、详细参数 1. 电气特性 - 最大漏极-源极电压（Vds）：650V - 最大连续漏极电流（Id）：10A - 最大脉冲漏极电流（Id,pulse）：30A（在适当的脉冲宽度和周期内） - 最大栅极-源极电压（Vgs）：±20V - 最大功耗（Pd）：65W（在适当的散热条件下） - 工作温度范围：-55℃至+150℃ 2. 开关特性 - 门极电容（Ciss）：约1.8nF（在Vgs=0V、V...

产品型号10N65的Datasheet PDF文件预览

UNISONIC TECHNOLOGIES CO., LTD

10N65

Power MOSFET

10A, 650V N-CHANNEL

POWER MOSFET

DESCRIPTION

TO-220

The UTC 10N65 is a high voltage and high current power MOSFET,

designed to have better characteristics, such as fast switching time, low

gate charge, low on-state resistance and a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in power supplies, PWM motor controls, high

efficient DC to DC converters and bridge circuits.

TO-220F

FEATURES

* R_DS(ON)=0.86Ω@V_GS=10V

* Low gate charge ( typical 44 nC)

* Low Crss ( typical 18 pF)

* Fast switching

TO-220F1

* 100% avalanche tested

* Improved dv/dt capability

SYMBOL

TO-263

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

10N65L-TA3-T

10N65L-TF1-T

10N65L-TF3-T

10N65L-TQ2-R

10N65L-TQ2-T

10N65G-TA3-T

10N65G-TF1-T

10N65G-TF3-T

10N65G-TQ2-R

10N65G-TQ2-T

TO-220

TO-220F1

TO-220F

TO-263

Tube

Tape Reel

Tube

TO-263

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 7

QW-R502-588.C

10N65

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25°C unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

650

UNIT

Drain-Source Voltage

Gate-Source Voltage

± 30

Avalanche Current (Note 2)

Continuous

I_D

Drain Current

Pulsed (Note 2)

I_DM

Single Pulsed (Note 3)

Repetitive (Note 2)

E_AS

700

V/ns

Avalanche Energy

E_AR

15.6

Peak Diode Recovery dv/dt (Note 4)

TO-220

dv/dt

4.5

156

Power Dissipation TO-220F/TO-220F1

TO-263

P_D

178

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

-55 ~ +150

°C

T_OPR

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 14.2mH, I_AS= 10A, V_DD= 50V, R_G= 25 Ω Starting T_J= 25°C

4. I_SD≤ 9.5A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J= 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATING

62.5

0.8

UNIT

°C/W

Junction to Ambient

θ_JA

TO-220

Junction to Case

TO-220F/TO-220F1

TO-263

θ_JC

2.5

0.7

UNISONIC TECHNOLOGIES CO., LTD

2 of 8

QW-R502-588.C

www.unisonic.com.tw

10N65

Power MOSFET

ELECTRICAL CHARACTERISTICS( T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

650

V_DS= 650V, V_GS= 0V

V_GS= 30 V, V_DS= 0 V

V_GS= -30 V, V_DS= 0 V

µA

Forward

Reverse

100 nA

-100 nA

V/°C

Gate-Source Leakage Current

I_GSS

Breakdown Voltage Temperature Coefficient ΔBV_DSS/ΔT_JI_D= 250 µA, Referenced to 25°C

0.7

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250μA

2.0

4.0

0.72 0.86

V_GS= 10V, I_D= 4.75A

ꢀ

C_ISS

C_OSS

C_RSS

1570 2040 pF

166 215 pF

Output Capacitance

V_DS=25V, V_GS=0V, f=1.0 MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

69 150 ns

144 300 ns

77 165 ns

V_DD=325V, I_D=10A, R_G=25ꢀ

(Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

6.7

V_DS=520V, I_D=10A, V_GS=10 V

(Note 1, 2)

Gate-Source Charge

Q_GS

Q_GD

Gate-Drain Charge

18.5

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS= 0 V, I_S=10A

1.4

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Reverse Recovery Time

t_rr

420

4.2

_GS= 0 V, I_S= 10A,

dI_F/ dt = 100 A/µs (Note 1)

Reverse Recovery Charge

Q_RR

µC

Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

3 of 8

QW-R502-588.C

www.unisonic.com.tw

10N65

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

P. W.

V_GS

(Driver)

Period

P.W.

Period

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

(D.U.T.)

V_DD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD

4 of 8

QW-R502-588.C

www.unisonic.com.tw

10N65

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit

Switching Waveforms

Gate Charge Test Circuit

Gate Charge Waveform

V_DS

BV_DSS

I_AS

R_D

V_DD

I_D(t)

V_DS(t)

V_DD

10V

D.U.T.

t_p

Time

t_p

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD

5 of 8

QW-R502-588.C

www.unisonic.com.tw

10N65

Power MOSFET

TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

6 of 8

QW-R502-588.C

www.unisonic.com.tw

10N65

Power MOSFET

TYPICAL CHARACTERISTICS(Cont.)

Maximum Drain Current vs. Case Temperature

Maximum Safe Operating Area

10²

Operation in this Area is United by R_DM

10μs

100μs

10¹

10⁰

1ms

10ms

100ms

Notes:

1.T_C=25℃

2.T_J=150℃

3.Single Pulse

10^-1

10³

10²

Drain-Source Voltage, V_DS(V)

10⁰

10¹

Case Temperature, T_C(℃)

150

100

125

Transient Thermal Response Curve

10⁰

D=0.5

0.2

NOTES:

1.ZθJC(t)=2.5D/W Max

2.Duty Factor,D=t1/t2

3.T_JW-T_C=P_DW-Z_θJC(t)

10^-1

0.1

0.05

0.02

0.01

P_DW

Single pulse

t₁

t₂

10^-2

10^-5

10^-4

10^-3

10^-2

10⁰

10¹

10^-1

Square Wave Pulse Duration, t₁(sec)

UNISONIC TECHNOLOGIES CO., LTD

7 of 8

QW-R502-588.C

www.unisonic.com.tw

10N65

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

8 of 8

QW-R502-588.C

www.unisonic.com.tw

10N65相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

10N80G-T3P-T产品参数

型号:	10N80G-T3P-T
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	UNISONIC TECHNOLOGIES CO LTD
零件包装代码：	TO-3P
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
Reach Compliance Code：	compliant
风险等级：	5.12
Is Samacsys：	N
雪崩能效等级（Eas）：	920 mJ
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	800 V
最大漏极电流 (Abs) (ID)：	10 A
最大漏极电流 (ID)：	10 A
最大漏源导通电阻：	1.1 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	240 W
最大脉冲漏极电流 (IDM)：	40 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号10N65的概述

产品型号10N65的Datasheet PDF文件预览

10N65相关产品..

10N65相关文章

IC37:专业IC行业平台