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北京元坤伟业科技有限公司
1N3046B
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北京宏博智成电子有限公司
1N3046B

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北京首天国际有限公司
1N3046B

数量22
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现代芯城（深圳）科技有限公司
1N3046B

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深圳市惊羽科技有限公司
1N3046BUR-1

数量6328
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封装DO-213
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深圳市和谐世家电子有限公司
1N3046BUR-1

数量13450
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深圳市一线半导体有限公司
1N3046B

数量18000
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深圳市科雨电子有限公司
1N3046BUR-1

数量326
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深圳市科雨电子有限公司
1N3046B-1

数量326
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171-4729-9698（微信同号）

产品型号1N3046B的Datasheet PDF文件预览

1N3016B thru 1N3051B

1 WATT METAL CASE ZENER DIODES

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This well established zener diode series for the 1N3016 thru 1N3051

JEDEC registration in the metal case DO-13 package provides a glass

hermetic seal for 6.8 to 200 volts. It is also well suited for high-reliability

applications where it is available in JAN, JANTX, and JANTXV military

qualifications. Lower voltages are also available in the 1N3821 thru

1N3830 series (3.3 V to 7.5 V) in the same package (see separate data

sheet). Microsemi also offers numerous other Zener diode products for a

variety of other packages including surface mount.

DO-13

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Zener Voltage Range: 6.8V to 200V

Hermetically sealed DO-13 metal package

Internally solder-bonded construction.

Also available in JAN, JANTX, JANTXV

qualifications per MIL-PRF19500/115 by adding the

JAN, JANTX, or JANTXV prefixes to part numbers

for desired level of screening, e.g. JANTX1N3016B,

JANTXV1N3051B, etc.

•

Regulates voltage over a broad operating current

and temperature range

•

Wide selection from 6.8 to 200 V

Tight voltage tolerances available

Low reverse (leakage) currents

Nonsensitive to ESD

Hermetically sealed metal package

Inherently radiation hard as described in Microsemi

•

Surface mount also available with 1N3016BUR-1

MicroNote 050

thru 1N3051BUR-1 series on separate data sheet

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Junction and Storage Temperatures:

•

CASE: DO-13 (DO-202AA), welded, hermetically

-65^oC to +175^oC

sealed metal and glass

THERMAL RESISTANCE: 50^oC/W* junction to lead

at 0.375 inches (10 mm) from body or 110 ^oC/W

junction to ambient when leads are mounted on FR4

PC board with 4 mm²copper pads (1 oz) and track

width 1 mm, length 25 mm

•

FINISH: All external surfaces are Tin-Lead (Pb/Sn)

plated and solderable per MIL-STD-750 method

2026

POLARITY: Cathode connected case.

WEIGHT: 1.4 grams.

•

DC Power Dissipation*: 1.0 Watt at T_L< +125^oC 3/8”

(10 mm) from body or 1.0 Watts at T_L< +65^oC when

mounted on FR4 PC board as described for thermal

resistance above (also see Fig 1)

Tape & Reel option: Standard per EIA-296 (add

“TR” suffix to part number)

•

See package dimensions on last page

•

Forward Voltage @ 200 mA: 1.5 Volts.

Solder Temperatures: 260 ^oC for 10 s (maximum)

For further mounting reference, thermal resistance from junction to metal case may be reduced to < 20 ^oC/W

when mounting DO-13 metal case directly on heat sink.

Microsemi

Scottsdale Division

Page 1

11-03-2003 REV A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N3016B thru 1N3051B

1 WATT METAL CASE ZENER DIODES

S C O T T S D A L E D I V I S I O N

*ELECTRICAL CHARACTERISTICS @ 25^oC

TYPICAL

TEMP. COEFF.

OF ZENER

NOMINAL

MAXIMUM

ZENER

CURRENT

I_ZM

MAXIMUM

REVERSE

LEAKAGE

CURRENT†

ZENER

VOLTAGE

V_Z@ I_ZT

ZENER

TEST

MAXIMUM ZENER IMPEDANCE

(Note 3)

JEDEC

TYPE

VOLTAGE

CURRENT

I_ZT

(Note 2)

(Note 4)

I_R

V_R

Z_ZT@ I_ZT

Z_ZK

OHMS

700

I_ZK

NUMBER

(Note 1)

Volts

6.8

7.5

8.2

9.1

OHMS

3.5

4.0

4.5

1.0

140

125

115

105

µA

150

100

Volts

5.2

%/^oC

.040

.045

.048

.050

.055

.060

.065

.070

.075

.080

.085

.090

.095

.100

1N3016B

1N3017B

1N3018B

1N3019B

1N3020B

1N3021B

1N3022B

1N3023B

1N3024B

1N3025B

1N3026B

1N3027B

1N3028B

1N3029B

1N3030B

1N3031B

1N3032B

1N3033B

1N3034B

1N3035B

1N3036B

1N3037B

1N3038B

1N3039B

1N3040B

1N3041B

1N3042B

1N3043B

1N3044B

1N3045B

1N3046B

1N3047B

1N3048B

1N3049B

1N3050B

1N3051B

700

5.7

700

6.2

700

6.9

700

.25

7.6

700

8.4

700

9.1

700

9.9

700

11.4

12.2

13.7

15.2

16.7

18.2

20.6

22.8

25.1

27.4

29.7

32.7

35.8

38.8

42.6

47.1

51.7

56.0

62.2

69.2

76.0

83.6

91.2

98.8

114.0

121.6

136.8

152.0

15.5

700

750

12.5

11.5

10.5

9.5

8.5

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.7

3.3

3.0

2.8

2.5

2.3

2.0

1.9

1.7

1.6

1.4

1.2

750

1000

1500

2000

3000

4000

4500

5000

6000

6500

7000

110

125

150

175

200

250

350

450

550

700

1000

1100

1200

1500

100

110

120

130

150

160

180

200

9.0

8.3

8.0

6.9

5.7

5.4

4.9

4.6

*JEDEC Registered Data. †Not JEDEC Data. ⁸⁰⁰⁰

NOTES: 1. When using JEDEC numbers, B suffix signifies +/-5% tolerance on nominal zener voltage. The suffix A is used to identify +/-10%

tolerance; no suffix indicates +/-20% tolerance: suffix C is used to identify +/- 2%; and suffix D is used to identify +/- 1% tolerance.

2. Zener Voltage (V_Z) is measured with junction in thermal equilibrium with still air at a temperature of 25^oC. The test currents (I_ZT) at

nominal voltages provide a constant 0.25 watts.

3. The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (I_ZTor

I_ZK) is superimposed on I_ZTor I_ZK. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve

and to eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.

4. These values of I_ZMmay often be exceeded in the case of individual diodes. The values shown are calculated for a unit at the high

voltage end of its tolerance range. Allowance has also been made for the rise in zener voltage above V_ZTthat results from zener

impedance and the increase in junction temperature as a unit approaches thermal equilibrium at a dissipation of 1 watt. The I_ZM

values shown for +/-5% tolerance units may be used with little error for +/-10% tolerance units, but should be reduced by 7% to

include a +/-20% tolerance unit near the high voltage end of its tolerance range.

Microsemi

Page 2

11-03-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N3016B thru 1N3051B

1 WATT METAL CASE ZENER DIODES

S C O T T S D A L E D I V I S I O N

OUTLINE AND CIRCUIT

Voltage Temperature

Coefficient %/^oC

mV Change /^oC

T_L– Lead Temperature (^oC) 3/8” from body

or T_Aon FR4 PC Board

FIGURE 1

^{NOMINAL Z}F^ENIG^EU^RR^VOE^L2^{TAGE (VOLTS)}

Typical Zener Voltage Temperature

Coeff. vs. Zener Voltage

Power Derating Curve

PACKAGE DIMENSIONS

FIGURE 3

Typical Capacitance vs. Reverse Voltage for 1-Watt Zeners

DO-13 (DO-202AA)

Microsemi

Page 3

11-03-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

1N3046B相关文章

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北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

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首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

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深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

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柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

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1N3046B产品参数

型号:	1N3046B
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	STMICROELECTRONICS
包装说明：	O-MALF-W2
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	5.62
Is Samacsys：	N
外壳连接：	ISOLATED
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	ZENER DIODE
最大动态阻抗：	550 Ω
JEDEC-95代码：	DO-13
JESD-30 代码：	O-MALF-W2
JESD-609代码：	e0
膝阻抗最大值：	4500 Ω
元件数量：	1
端子数量：	2
最高工作温度：	175 °C
最低工作温度：	-65 °C
封装主体材料：	METAL
封装形状：	ROUND
封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL
最大功率耗散：	1 W
认证状态：	Not Qualified
标称参考电压：	120 V
最大反向电流：	5 µA
子类别：	Voltage Reference Diodes
表面贴装：	NO
技术：	ZENER
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE
端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
电压温度Coeff-Max：	114 mV/ °C
最大电压容差：	5%
工作测试电流：	2 mA
Base Number Matches：	1

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