1N5242B现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号1N5242B的概述

芯片1N5242B的概述 1N5242B是一款常用的齐纳二极管，主要用于电压稳定和过压保护。这种芯片因其广泛的应用和良好的性能，受到许多电子设计工程师的青睐。齐纳二极管的主要功能是提供稳定的参考电压，同时能够有效地抑制电压的波动，对各种电路提供保护。1N5242B的主要特点在于其额定功率、电压范围和反向击穿特性。芯片1N5242B的详细参数 1N5242B的参数如下： - 电压范围：1N5242B的齐纳击穿电压为 5.1V。这类齐纳二极管通常具有多种型号，每种型号的击穿电压各不相同，具体根据需求进行选择。 - 功耗：其最大功耗为1瓦特 (W)，这意味着它能够在较高的功率下工作，同时维持其电气特性。 - 反向电流：在击穿电压下，最大反向电流可达 49 毫安（mA），该参数对于确保齐纳二极管在电压波动时能够正常工作至关重要。 - 动态阻抗：其动态阻抗在约 25°C 的环境温度下为 20 ...

产品型号1N5242B的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N5225B to 1N5267B

Voltage regulator diodes

1996 Apr 26

Product speciﬁcation

Supersedes data of April 1992

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

1N5225B to 1N5267B

FEATURES

DESCRIPTION

• Total power dissipation:

max. 500 mW

Low-power voltage regulator diodes in hermetically sealed leaded glass

SOD27 (DO-35) packages.

• Tolerance series: ±5%

The series consists of 43 types with nominal working voltages from 3.0 to 75 V.

• Working voltage range:

nom. 3.0 to 75 V

• Non-repetitive peak reverse power

dissipation: max. 40 W.

handbook, halfpage

MAM239

APPLICATIONS

• Low-power voltage stabilizers or

voltage references.

The diodes are type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I_F

continuous forward current

non-repetitive peak reverse current

−

250

I_ZSM

t_p= 100 µs; square wave;

T_j= 25 °C prior to surge

see Table

“Per type”

P_tot

total power dissipation

T_amb= 50 °C; lead length max.;

−

400

note 1

Lead length 8 mm; note 2

−

500

P_ZSM

non-repetitive peak reverse power

dissipation

t_p= 100 µs; square wave;

T_j= 25 °C prior to surge; see Fig.3

t_p= 8.3 ms; square wave;

−

T_j≤ 55 °C prior to surge

T_stg

T_j

storage temperature

junction temperature

−65

+200

°C

Notes

1. Device mounted on a printed circuit-board without metallization pad.

2. Tie-point temperature ≤ 75 °C.

ELECTRICAL CHARACTERISTICS

Table 1

T_j= 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

I_F= 200 mA; see Fig.4

MAX.

UNIT

V_F

1.1

1996 Apr 26

Per type

T_j= 25 °C; unless otherwise specified.

WORKING DIFFERENTIAL TEMP. COEFF.

TEST

CURRENT

I_Ztest(mA) at f = 1 MHz;

at V_R= 0 V

DIODE CAP. REVERSE CURRENT

NON-REPETITIVE PEAK

REVERSE CURRENT

I_ZSM(A)

VOLTAGE RESISTANCE

S_Z(%/K)

at I_Z

C_d(pF)

at REVERSE

VOLTAGE

V_Z(V)⁽¹⁾

at I_Ztest

r_dif(Ω)

(2)

TYPE No.

at I_Ztest

t_p= 100 µs; T_amb= 25 °C

I_R(µA)

V_R

(V)

NOM.

MAX.

1N5225B

1N5226B

1N5227B

1N5228B

1N5229B

1N5230B

1N5231B

1N5232B

1N5233B

1N5234B

1N5235B

1N5236B

1N5237B

1N5238B

1N5239B

1N5240B

1N5241B

1N5242B

1N5243B

1N5244B

1N5245B

1N5246B

1N5247B

1N5248B

1N5249B

1N5250B

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.0

6.2

6.8

7.5

8.2

8.7

9.1

1600

1700

1900

2000

1900

1600

1000

750

−0.075

−0.070

−0.065

−0.060

±0.055

±0.030

+0.038

+0.045

+0.050

+0.058

+0.062

+0.065

+0.068

+0.075

+0.076

+0.077

+0.079

+0.082

+0.083

+0.084

+0.085

+0.086

450

300

200

150

1.0

6.0

4.0

3.5

3.0

2.5

2.0

1.5

1.0

1.5

2.0

3.0

3.5

4.0

5.0

500

6.0

500

6.5

600

6.5

600

7.0

600

8.0

600

8.4

600

9.1

600

9.5

0.5

0.1

9.9

600

9.0

8.5

7.8

7.4

7.0

6.6

6.2

10.0

11.0

12.0

13.0

14.0

15.0

600

WORKING DIFFERENTIAL TEMP. COEFF.

TEST

CURRENT

I_Ztest(mA) at f = 1 MHz;

at V_R= 0 V

DIODE CAP. REVERSE CURRENT

NON-REPETITIVE PEAK

REVERSE CURRENT

I_ZSM(A)

VOLTAGE RESISTANCE

S_Z(%/K)

at I_Z

C_d(pF)

at REVERSE

VOLTAGE

(2)

V_Z(V)⁽¹⁾

at I_Ztest

r_dif(Ω)

TYPE No.

at I_Ztest

t_p= 100 µs; T_amb= 25 °C

I_R(µA)

V_R

(V)

NOM.

MAX.

1N5251B

1N5252B

1N5253B

1N5254B

1N5255B

1N5256B

1N5257B

1N5258B

1N5259B

1N5260B

1N5261B

1N5262B

1N5263B

1N5264B

1N5265B

1N5266B

1N5267B

600

+0.087

+0.088

+0.089

+0.090

+0.091

+0.092

+0.093

+0.094

+0.095

+0.096

+0.097

+0.098

5.6

5.2

5.0

4.6

4.5

4.2

3.8

3.4

3.2

3.0

2.7

2.5

2.2

2.1

2.0

1.8

1.7

0.1

17.0

18.0

19.0

21.0

23.0

25.0

27.0

30.0

33.0

36.0

39.0

43.0

46.0

47.0

52.0

56.0

1.25

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.25

0.2

600

700

800

900

1000

1100

1300

1400

1600

1700

Notes

1. V_Zis measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C.

2. For types 1N5225B to 1N5242B the I_Zcurrent is 7.5 mA; for 1N5243B and higher I_Z= I_Ztest. S_Zvalues valid between 25 °C and 125 °C.

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

1N5225B to 1N5267B

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

300

UNIT

K/W

R_{th j-tp}

R_{th j-a}

thermal resistance from junction to tie-point lead length 10 mm

thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1

380

Note

1. Device mounted on a printed circuit-board without metallization pad.

1996 Apr 26

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

1N5225B to 1N5267B

GRAPHICAL DATA

MBG930

handbook, full pagewidth

δ = 1

th j-a

0.75

0.50

0.33

(K/W)

0.20

0.10

0.05

0.02

0.01

≤0.001

δ =

−1

(ms)

Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.

MBG801

MBG803

250

handbook, halfpage

ZSM

(W)

(mA)

125

(1)

(2)

0.5

−1

0.75

(V)

1.0

duration (ms)

(1) T_j= 25 °C (prior to surge).

(2) T_j= 150 °C (prior to surge).

T_j= 25 °C.

Fig.3 Maximum permissible non-repetitive

peak reverse power dissipation

versus duration.

Fig.4 Forward current as a function of forward

voltage; typical values.

1996 Apr 26

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

1N5225B to 1N5267B

PACKAGE OUTLINE

ndbook, full pagewidth

0.56

max

1.85

max

4.25

max

MLA428 - 1

25.4 min

Dimensions in mm.

Fig.5 SOD27 (DO-35).

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Apr 26

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1N5242B产品参数

型号:	1N5242B
生命周期：	Active
IHS 制造商：	GOOD-ARK ELECTRONICS CO LTD
包装说明：	O-LALF-W2
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	5.75
Is Samacsys：	N
外壳连接：	ISOLATED
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	ZENER DIODE
最大动态阻抗：	30 Ω
JEDEC-95代码：	DO-204AH
JESD-30 代码：	O-LALF-W2
元件数量：	1
端子数量：	2
最高工作温度：	175 °C
封装主体材料：	GLASS
封装形状：	ROUND
封装形式：	LONG FORM
极性：	UNIDIRECTIONAL
最大功率耗散：	0.5 W
标称参考电压：	12 V
子类别：	Voltage Reference Diodes
表面贴装：	NO
技术：	ZENER
端子形式：	WIRE
端子位置：	AXIAL
最大电压容差：	5%
工作测试电流：	20 mA
Base Number Matches：	1

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