1SMB8.0AT3G应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

1SMB5.0AT3 Series

600 Watt Peak Power Zener

Transient Voltage

Suppressors

Unidirectional*

http://onsemi.com

The SMB series is designed to protect voltage sensitive

components from high voltage, high energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. The SMB series is supplied in

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetict package and is ideally suited for use in communication

systems, automotive, numerical controls, process controls, medical

equipment, business machines, power supplies and many other

industrial/consumer applications.

PLASTIC SURFACE MOUNT

ZENER OVERVOLTAGE

TRANSIENT SUPPRESSORS

5.0 V − 170 V,

600 W PEAK POWER

Features

Cathode

Anode

• Working Peak Reverse Voltage Range − 5.0 V to 170 V

• Standard Zener Breakdown Voltage Range − 6.7 V to 199 V

• Peak Power − 600 W @ 1.0 ms

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5.0 mA Above 10 V

• UL 497B for Isolated Loop Circuit Protection

• Response Time is Typically < 1.0 ns

• Pb−Free Packages are Available

SMB

CASE 403A

PLASTIC

MARKING DIAGRAM

AYWW

xx G

G

A

Y

= Assembly Location

= Year

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

WW = Work Week

xx

= Device Code (Refer to page 3)

= Pb−Free Package

G

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

(Note: Microdot may be in either location)

260°C for 10 Seconds

LEADS: Modified L−Bend providing more contact area to bond pads

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

ORDERING INFORMATION

†

Device

Package

Shipping

1SMBxxxAT3

1SMBxxxAT3G

SMB

2500/Tape & Reel

SMB

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

DEVICE MARKING INFORMATION

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 of

this data sheet.

©

Semiconductor Components Industries, LLC, 2007

1

Publication Order Number:

February, 2007 − Rev. 10

1SMB5.0AT3/D

1SMB5.0AT3 Series

MAXIMUM RATINGS

Rating

Symbol

Value

600

Unit

W

Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms

P

L

PK

DC Power Dissipation @ T = 75°C

P

3.0

W

L

D

Measured Zero Lead Length (Note 2)

Derate Above 75°C

Thermal Resistance from Junction−to−Lead

40

25

mW/°C

°C/W

R

q

JL

DC Power Dissipation (Note 3) @ T = 25°C

P

0.55

4.4

226

W

mW/°C

°C/W

A

D

Derate Above 25°C

Thermal Resistance from Junction−to−Ambient

R

q

JA

Forward Surge Current (Note 4) @ T = 25°C

I

100

A

FSM

Operating and Storage Temperature Range

T , T

−65 to +150

°C

J

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000 ms, non−repetitive.

2. 1 in square copper pad, FR−4 board.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (T = 25°C unless

I

A

otherwise noted, V = 3.5 V Max. @ I (Note 5) = 30 A)

F

I

F

Symbol

Parameter

I

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

PP

V

C

PP

V

BR RWM

V

Working Peak Reverse Voltage

C

RWM

V

I

V

R

T

F

I

Maximum Reverse Leakage Current @ V

I

R

RWM

V

Breakdown Voltage @ I

Test Current

BR

T

I

T

F

I

Forward Current

I

PP

V

Forward Voltage @ I

F

5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,

non−repetitive duty cycle.

Uni−Directional TVS

http://onsemi.com

2

1SMB5.0AT3 Series

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)

Breakdown Voltage

V

@ I (Note 8)

C

PP

V

C

typ

RWM

V

(Note 7) Volts

@ I

V

I

(Note 6)

(Note 9)

I

@ V

RWM

BR

T

C

PP

R

Device

V

mA

Min

Nom

Max

mA

V

A

pF

Marking

Device*

1SMB5.0AT3, G

1SMB6.0AT3, G

1SMB6.5AT3, G

1SMB7.0AT3, G

KE

KG

KK

KM

5.0

6.0

6.5

7.0

800

500

6.40

6.67

7.22

7.78

6.7

7.02

7.6

7.0

7.37

7.98

8.6

10

9.2

65.2

58.3

53.6

50.0

2700

2300

2140

2005

10.3

11.2

12.0

8.19

1SMB7.5AT3, G

1SMB8.0AT3, G

1SMB8.5AT3, G

1SMB9.0AT3, G

KP

KR

KT

KV

7.5

8.0

8.5

9.0

100

50

10

8.33

8.89

9.44

10.0

8.77

9.36

9.92

9.21

9.83

10.4

11.1

1.0

12.9

13.6

14.4

15.4

46.5

44.1

41.7

39.0

1890

1780

1690

1605

5.0

10.55

1SMB10AT3, G

1SMB11AT3, G

1SMB12AT3, G

1SMB13AT3, G

KX

KZ

LE

LG

10

11

12

13

5.0

11.1

12.2

13.3

14.4

11.7

12.85

14

12.3

13.5

14.7

15.9

1.0

17.0

18.2

19.9

21.5

35.3

33.0

30.2

27.9

1460

1345

1245

1160

15.15

1SMB14AT3, G

1SMB15AT3, G

1SMB16AT3, G

1SMB17AT3, G

LK

LM

LP

LR

14

15

16

17

5.0

15.6

16.7

17.8

18.9

16.4

17.6

18.75

19.9

17.2

18.5

19.7

20.9

1.0

23.2

24.4

26.0

27.6

25.8

24.0

23.1

21.7

1085

1020

965

915

1SMB18AT3, G

1SMB20AT3, G

1SMB22AT3, G

1SMB24AT3, G

LT

LV

LX

LZ

18

20

22

24

5.0

20.0

22.2

24.4

26.7

21.05

23.35

25.65

28.1

22.1

24.5

26.9

29.5

1.0

29.2

32.4

35.5

38.9

20.5

18.5

16.9

15.4

870

790

730

675

1SMB26AT3, G

1SMB28AT3, G

1SMB30AT3, G

1SMB33AT3, G

ME

MG

MK

MM

26

28

30

33

5.0

28.9

31.1

33.3

36.7

30.4

32.75

35.05

38.65

31.9

34.4

36.8

40.6

1.0

42.1

45.4

48.4

53.3

14.2

13.2

12.4

11.3

630

590

555

510

1SMB36AT3, G

1SMB40AT3, G

1SMB43AT3, G

1SMB45AT3, G

MP

MR

MT

MV

36

40

43

45

5.0

40.0

44.4

47.8

50.0

42.1

46.75

50.3

44.2

49.1

52.8

55.3

1.0

58.1

64.5

69.4

72.7

10.3

9.3

8.6

8.3

470

430

400

385

52.65

1SMB48AT3, G

1SMB51AT3, G

1SMB54AT3, G

1SMB58AT3, G

MX

MZ

NE

NG

48

51

54

58

5.0

53.3

56.7

60.0

64.4

56.1

59.7

63.15

67.8

58.9

62.7

66.3

71.2

1.0

77.4

82.4

87.1

93.6

7.7

7.3

6.9

6.4

365

345

330

310

1SMB60AT3, G

1SMB64AT3, G

1SMB70AT3, G

1SMB75AT3, G

NK

NM

NP

NR

60

64

70

75

5.0

66.7

71.1

77.8

83.3

70.2

74.85

81.9

73.7

78.6

86

1.0

96.8

103

113

121

6.2

5.8

5.3

4.9

300

280

260

245

87.7

92.1

1SMB85AT3, G

1SMB90AT3, G

1SMB100AT3, G

NV

NX

NZ

85

90

100

55.0

5.0

94.4

100

111

99.2

105.5

117

104

111

123

1.0

137

146

162

4.4

4.1

3.7

220

210

190

1SMB110AT3, G

1SMB120AT3, G

1SMB130AT3, G

1SMB150AT3, G

PE

PG

PK

PM

110

120

130

150

5.0

122

133

144

167

128.5

140

151.5

176

135

147

159

185

1.0

177

193

209

243

3.4

3.1

2.9

2.5

175

160

150

135

1SMB160AT3, G

1SMB170AT3, G

PP

PR

160

170

5.0

178

189

187.5

199

197

209

1.0

259

275

2.3

2.2

125

120

6. A transient suppressor is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than

RWM

the DC or continuous peak operating voltage level.

7. V measured at pulse test current I at an ambient temperature of 25°C.

BR

T

8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data − 600 W at the beginning of this group.

9. Bias Voltage = 0 V, F = 1 MHz, T = 25°C

J

†Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.

* The “G” suffix indicates Pb−Free package available.

http://onsemi.com

3

1SMB5.0AT3 Series

100

10

PULSE WIDTH (t ) IS DEFINED AS

P

NONREPETITIVE

THAT POINT WHERE THE PEAK

CURRENT DECAYS TO 50% OF

t ≤ 10 ms

rꢀ

PULSE WAVEFORM

SHOWN IN FIGURE 2

I .

PP

100

50

0

PEAK VALUE − I

PP

I

PP

2

HALF VALUE −

1

t

P

0.1

0.1 ms

1 ms

10 ms

100 ms

1 ms

10 ms

0

1

2

3

4

5

t , PULSE WIDTH

P

t, TIME (ms)

Figure 1. Pulse Rating Curve

Figure 2. Pulse Waveform

160

140

120

10,000

1000

T = 25°C

J

f = 1 MHz

1SMB5.0AT3G

1SMB10AT3G

100

80

100

10

1

1SMB48AT3G

60

1SMB170AT3G

40

20

0

25

50

75

100

125

150

1

10

100

1000

T , AMBIENT TEMPERATURE (°C)

A

BIAS VOLTAGE (VOLTS)

Figure 4. Typical Junction Capacitance vs.

Bias Voltage

Figure 3. Pulse Derating Curve

Z

in

LOAD

V

in

V

L

Figure 5. Typical Protection Circuit

http://onsemi.com

4

1SMB5.0AT3 Series

APPLICATION NOTES

RESPONSE TIME

minimum lead lengths and placing the suppressor device as

close as possible to the equipment or components to be

protected will minimize this overshoot.

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be

protected. In this situation, there is a time delay associated

with the capacitance of the device and an overshoot

condition associated with the inductance of the device and

the inductance of the connection method. The capacitive

effect is of minor importance in the parallel protection

scheme because it only produces a time delay in the

transition from the operating voltage to the clamp voltage as

shown in Figure 6.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero

current to full current) and lead inductance. This inductive

effect produces an overshoot in the voltage across the

equipment or component being protected as shown in

Figure 7. Minimizing this overshoot is very important in the

application, since the main purpose for adding a transient

suppressor is to clamp voltage spikes. The SMB series have

a very good response time, typically < 1.0 ns and negligible

inductance. However, external inductive effects could

produce unacceptable overshoot. Proper circuit layout,

Some input impedance represented by Z is essential to

in

prevent overstress of the protection device. This impedance

should be as high as possible, without restricting the circuit

operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions

and at a lead temperature of 25°C. If the duty cycle increases,

the peak power must be reduced as indicated by the curves

of Figure 8. Average power must be derated as the lead or

ambient temperature rises above 25°C. The average power

derating curve normally given on data sheets may be

normalized and used for this purpose.

At first glance the derating curves of Figure 8 appear to be

in error as the 10 ms pulse has a higher derating factor than

the 10 ms pulse. However, when the derating factor for a

given pulse of Figure 8 is multiplied by the peak power

value of Figure 1 for the same pulse, the results follow the

expected trend.

http://onsemi.com

5

1SMB5.0AT3 Series

V

in

(TRANSIENT)

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

V

in

(TRANSIENT)

V

L

V

L

V

in

t

d

t

= TIME DELAY DUE TO CAPACITIVE EFFECT

t

D

t

Figure 6.

Figure 7.

1

0.7

0.5

0.3

0.2

PULSE WIDTH

10 ms

0.1

0.07

0.05

1 ms

0.03

0.02

100 ms

10 ms

10 20

D, DUTY CYCLE (%)

0.01

0.1 0.2

0.5

1

2

5

50 100

Figure 8. Typical Derating Factor for Duty Cycle

UL RECOGNITION

The entire series has Underwriters Laboratory

Recognition for the classification of protectors (QVGV2)

under the UL standard for safety 497B and File #E210057.

Many competitors only have one or two devices recognized

or have recognition in a non-protective category. Some

competitors have no recognition at all. With the UL497B

recognition, our parts successfully passed several tests

including Strike Voltage Breakdown test, Endurance

Conditioning, Temperature test, Dielectric

Voltage-Withstand test, Discharge test and several more.

Whereas, some competitors have only passed a

flammability test for the package material, we have been

recognized for much more to be included in their Protector

category.

http://onsemi.com

6

1SMB5.0AT3 Series

PACKAGE DIMENSIONS

SMB

CASE 403A−03

ISSUE F

H

E

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

E

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

MILLIMETERS

INCHES

DIM

A

A1

b

c

D

MIN

1.90

0.05

1.96

0.15

3.30

4.06

5.21

0.76

NOM

2.13

0.10

2.03

0.23

3.56

4.32

5.44

1.02

MAX

MIN

NOM

0.084

0.004

0.080

0.009

0.140

0.170

0.214

0.040

MAX

0.096

0.008

0.087

0.012

0.156

0.181

0.220

0.063

2.45

0.20

2.20

0.31

3.95

4.60

5.60

1.60

0.075

0.002

0.077

0.006

0.130

0.160

0.205

0.030

b

D

E

H

E

L

0.51 REF

L1

0.020 REF

A

A1

c

L

L1

SOLDERING FOOTPRINT*

2.261

0.089

2.743

0.108

2.159

0.085

mm

inches

ǒ

Ǔ

SCALE 8:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SURMETIC is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

1SMB5.0AT3/D

http://onsemi.com

7

型号:	1SMB8.0AT3G
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	LITTELFUSE INC
包装说明：	R-PDSO-C2
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	5.7
Is Samacsys：	N
其他特性：	EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：	9.83 V
最小击穿电压：	8.89 V
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA
JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3
最大非重复峰值反向功率耗散：	600 W
元件数量：	1
端子数量：	2
最高工作温度：	150 °C
最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL
最大功率耗散：	0.55 W
认证状态：	Not Qualified
最大重复峰值反向电压：	8 V
表面贴装：	YES
技术：	ZENER
端子面层：	Matte Tin (Sn)
端子形式：	C BEND
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

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