2N3420芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

产品型号2N3420的Datasheet PDF文件预览

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

2N3420

APPLICATIONS:

·

Power Supply

Pulse Amplifier

High Frequency Power Switching

3 Amp, 85V,

NPN Silicon Power

Transistors

FEATURES:

·

Meets MIL-S-19500/393

Collector-Base Voltage: up to 85

Peak Collector Current: 5A

High Power Dissipation in TO-5: 15W @ T_C= 100°C

JAN, JTX, JTXV, JANS

Fast Switching

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200°C permits reliable operation in high ambients, and

the hermetically sealed package insures maximum reliability

and long life.

TO-5

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

VALUE

UNITS

Volts

Amps

°C

V_CBO

V_CEO

V_EBO

I_C*

*

Collector-Base Voltage

85

Collector-Emitter Voltage

Emitter-Base Voltage

D.C. Collector Current

Peak Collector Current

Storage Temperature

Operating Junction Temperature

Power Dissipation

60

8

3

I_C*

5

T_STG

*

-65 to 200

T_J*

P_T*

°C

1.0

15

Watts

T_C= 25°C Ambient

T_C= 100°C Case

* Indicates MIL-S-19500/393

MSC0982A.DOC 12-02-98

2N3420

ELECTRICAL CHARACTERISTICS:

(25°Case Temperature Unless Otherwise Noted)

VALUE

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Units

Vdc

Min.

60

Max.

----

Collector-Emitter

Breakdown Voltage

Collector-Emitter

Cutoff Current

I_C= 50 mAdc, Cond. D (Note 1)

BV_CEO*

----

0.3

50

I_CEX

I_CEO*

I_EBO

*

V_EB= 0.5 Vdc, Cond. A, V_CE= 80 Vdc

V_EB= 0.5 Vdc, Cond. A, T_A= 150°C, V_CE= 80 Vdc

mAdc

Collector-Emitter

Cutoff Current

Emitter-Base

----

5.0

V_CE= 45 Vdc, Cond. D

*

V_EB= 6 Vdc, Cond. D

mAdc

----

0.5

10

Cutoff Current

V_EB= 8 Vdc, Cond. D

40

----

hFE*

D.C. Current Gain

(Note 1)

I_C= 100 mAdc, V_CE= 2 Vdc

I_C= 1 Adc, V_CE= 2 Vdc

I_C= 2 Adc, V_CE= 2 Vdc

I_C= 5 Adc, V_CE= 5 Vdc

I_C= 1 Adc, V_CE= 2 Vdc, T_A= - 55°C

40

120

----

30

15

10

----

0.25

0.5

Vdc

V_CE(sat)

*

I_C= 1 Adc, I_B= 0.1 Adc

I_C= 2 Adc, I_B= 0.2 Adc

Collector-Emitter

Saturation Voltage

(Note 1)

0.6

0.7

1.2

1.4

Vdc

V_BE(sat)*

I_S/b*

I_C= 1 Adc, I_B= 0.1 Adc

I_C= 2 Adc, I_B= 0.2 Adc

Base-Emitter Saturation

Voltage (Note 1)

Forward Biased Second

Breakdown

3

----

Adc

mAdc

V_CE= 5 Vdc, T_C= 100°C

V_CE= 37 Vdc, T_C= 100°C

V_CE= 60 Vdc, T_C= 100°C

0.4

185

Unclamped Reverse

Biased Second

Breakdown

Clamped Reverse Biased

Second Breakdown

45

----

mj

I_C= 3 Adc, L = 10 mH, Base Open

E_S/b*

180

----

I_C= 3 Adc, L = 40 mH, V_Clamp= 125V

E_S/b*

f_T*

Gain Bandwidth Product

Output Capacitance

26

160

150

MHz

pf

I_C= 0.1 Adc, V_CE= 10 Vdc, f = 20 MHz

V_CB= 10 Vdc, I_E= 0, f = 1 MHz

C_Ob

*

----

Turn-on Time

Turn-off Time

----

0.3

1.2

t_on

t_off

I_C= 1 Adc, I_B1= - I_B2= 0.1 Adc

ms

Note 1: Pulse Test: Pulse width = 300mSec., duty cycle £ 2%.

* Indicates MIL-S-19500/393

MSC0982A.DOC 12-02-98

2N3420

PACKAGE MECHANICAL DATA:

1.500 [38.10] MIN

.031 [.79]

45°

.240 [6.35]

.260 [6.60]

.029 [.74]

.045 [1.14]

.010 [.25]

.030 [.76]

.200 [5.08]

Ø.305 [7.75]

Ø.335 [8.51]

.100 [2.54]

[+.051]

_-.001[.432]

[.025]

Ø.017 ^+.002

Ø.335 [8.51]

Ø.370 [9.40]

NOTE: DIMENSIONS IN [ ] = MILLIMETERS

MSC0982A.DOC 12-02-98

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