2N3486A现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

产品型号2N3486A的概述

2N3486A 芯片概述及详细参数一、概述 2N3486A是一种功率晶体管，属于NPN型硅晶体管，广泛应用于无线电频率放大器和功率放大器领域。这种器件具有较高的增益和良好的线性度，适合在一些需要中等功率输出的应用场景中使用。随着科技的不断发展，2N3486A在电子设备中的使用也逐渐普遍。该器件被设计用于高频、小信号的放大和驱动电路。2N3486A的引脚配置采用标准的TO-220封装形式，这种封装易于散热并方便安装。晶体管的增益、最大集电极电压以及功耗都使其成为了多种消费电子和工业用途的理想选择。二、详细参数 2N3486A的主要参数如下： 1. 类型: NPN 2. 最大集电极电压 (Vce): 60V 3. 最大集电极电流 (Ic): 5A 4. 最大功率耗散 (Ptot): 50W (在适当散热条件下) 5. 饱和电压 (Vce(sat)): 1.2V 6. 直流增益 (h...

产品型号2N3486A的Datasheet PDF文件预览

Data Sheet No. 2N3486A

Ge ne ric Pa rt Numbe r:

2N3486A

Type 2N3486A

Geometry 0600

Polarity PNP

Qual Level: JAN - JANTXV

REF: MIL-PRF-19500/392

Features:

·

General-purpose transistor for

switching and amplifier applica-

tons.

·

Housed in a TO-46 case.

Also available in chip form using

the 0600 chip geometry.

·

The Min and Max limits shown are

per MIL-PRF-19500/392 which

Semicoa meets in all cases.

·

The Typ values are actual batch

TO-46

averages for Semicoa.

Radiation Graphs available.

Maximum Ratings

T_C= 25^oC unless otherwise specified

Rating

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

60

Unit

V

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Operating Junction Temperature

Storage Temperature

60

V

5.0

V

600

mA

^oC

T_J

-55 to +200

^oC

T_STG

Data Sheet No. 2N3486A

Electrical Characteristics

T_C= 25^oC unless otherwise specified

OFF Characteristics

Collector-Base Breakdown Voltage

I_C= 10 µA

Symbol Min

Typ

Max

Unit

V

60

5.0

---

100

---

V

(BR)CBO

Collector-Emitter Breakdown Voltage

I_C= 10 mA

V

(BR)CEO

70

9.0

---

10

50

V

Emitter-Base Breakdown Voltage

I_E= 10 µA, pulsed

V

(BR)EBO

Collector-Base Cutoff Current

V_CB= 50 V

I_CBO

I_EBO

0.25

0.1

nA

Emitter-Base Cutoff Current

V_EB= 3.5 V

---

ON Characteristics

Symbol

Min

Typ

Max

Unit

Forward Current Transfer Ratio

I_C= 100 µA, V_CE= 10 V

h_FE1

h_FE2

h_FE3

h_FE4

h_FE5

75

100

50

225

250

---

I_C= 1.0 mA, V_CE= 10 V

I_C= 10 mA, V_CE= 10 V

---

I_C= 150 mA, V_CE= 10 V (pulse test)

180

80

300

---

I_C= 500 mA, V_CE= 10 V (pulse test)

Collector-Emitter Saturation Voltage

I_C= 150 mA, I_B= 15 mA (pulse test)

V_CE(sat)1

V_CE(sat)2

---

0.18

0.5

0.4

1.6

V dc

I_C= 500 mA, I_B= 50 mA (pulse test)

Base-Emitter Saturation Voltage

I_C= 150 mA, I_B= 15 mA (pulse test)

V_BE(sat)1

V_BE(sat)2

---

0.87

1.0

1.3

2.6

V dc

I_C= 500 mA, I_B= 50 mA (pulse test)

Small Signal Characteristics

Short Circuit Forward Current Transfer Ratio

I_C= 1 mA, V_CE= 10 V, f = 1 kHz

Symbol

Min

Typ

Max

Unit

h_FE

100

250

---

Open Circuit Output Capacitance

C_OBO

---

6.0

8.0

30

pF

V_CB= 10 V, I_E= 0 V, 100 kHz < f < 1 MHz

Input Capacitance, Output Open Circuited

V_EB= 2.0 V, I_C= 0, 100 kHz < f < 1 MHz

C

IBO

Switching Characteristics

Saturated Turn On Switching Time to 90%

16V, 50 ohm input pulse

Symbol

Min

Typ

Max

Unit

t_ON

---

25

45

ns

Saturated Turn Off Switching Time to 10%

16V, 50 ohm input pulse

t_OFF

---

175

200

ns

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