2N7002-7各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号2N7002-7的概述

芯片2N7002-7的概述 2N7002-7是一款广泛应用的N沟道增强型场效应晶体管（MOSFET），其设计旨在为电子电路中提供良好的开关能力。由于具有低的导通电阻和较快的开关速度，该器件在许多电子应用中表现出色，尤其是在需要高效开关和信号放大的场合。该芯片广泛用于低功耗电路、信号处理电路和数字电路中，尤其适合用于驱动小电机、开关电源和其他各种开关应用。芯片2N7002-7的详细参数 2N7002-7的主要参数包括： - 最大漏源电压 (V_DS): 60V - 最大漏极电流 (I_D): 200mA - 最大栅源电压 (V_GS): ±20V - R_DS(on): < 0.8Ω (当V_GS=10V时) - 门阈值电压 (V_GS(th)): 2V至4V - 功耗 (P_D): 300mW - 最高操作温度 (T_J): 150°C - 封装类型: SOT-23 这些参数表明，2...

产品型号2N7002-7的Datasheet PDF文件预览

2N7002

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

•

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

_Dmax

V_(BR)DSS

R_DS(ON)max

7.5Ω @ V_GS= 5V

T_A= 25°C

60V

210mA

Small Surface Mount Package

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Notes 3 & 4)

Qualified to AEC-Q101 standards for High Reliability

Description

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data

•

Case: SOT23

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Applications

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

•

Motor control

Power Management Functions

•

Drain

SOT23

Gate

Source

Top View

Equivalent Circuit

Top View

Ordering Information (Note 5)

Part Number

2N7002-7-F

2N7002-13-F

2N7002Q-7-F

Qualification

Case

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

3,000/Tape & Reel

Commercial

Automotive

SOT23

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

5. For packaging details, go to our website at http://www.diodes.com.

Marking Information

K = SAT (Shanghai Assembly/ Test site)

C = CAT (Chengdu Assembly/ Test site)

72= Product Type Marking Code

YM = Date Code Marking

C72

K72

Y = Year (ex: N = 2002)

M = Month (ex: 9 = September)

Shanghai A/T Site

Chengdu A/T Site

Date Code Key

Year

2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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August 2012

2N7002

Document number: DS11303 Rev. 31 - 2

2N7002

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Drain-Gate Voltage R_GS≤ 1.0MΩ

V_DGR

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V_GSS

_A= 25°C

170

120

105

Steady

State

Continuous Drain Current (Note 6) V_GS= 10V

T_A= 85°C

I_D

T_A= 100°C

T_A= 25°C

210

150

135

Steady

State

Continuous Drain Current (Note 7) V_GS= 10V

_A= 85°C

T_A= 100°C

Pulsed

Continuous

I_D

0.5

Maximum Body Diode Forward Current (Note 7)

I_S

800

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

I_DM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

P_D

Value

370

540

348

241

Units

(Note 6)

Total Power Dissipation

(Note 7)

(Note 6)

Thermal Resistance, Junction to Ambient

(Note 7)

Thermal Resistance, Junction to Case

R_θ

°C/W

°C

(Note 7)

R_θ

Operating and Storage Temperature Range

-55 to 150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 8)

Symbol

Min

Typ

Max

Unit

Test Condition

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

⎯

BV_DSS

I_DSS

⎯

1.0

500

V_GS= 0V, I_D= 10μA

V_DS= 60V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

@ T_C= 25°C

@ T_C= 125°C

µA

Gate-Body Leakage

±10

I_GSS

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

1.0

2.5

V_GS(th)

⎯

V_DS= V_GS, I_D= 250μA

_GS= 5.0V, I_D= 0.05A

Static Drain-Source On-Resistance

@ T_J= 25°C

@ T_J= 125°C

7.5

5.0

13.5

3.2

⎯

4.4

R_{DS (ON)}

⎯

V_GS= 10V, I_D= 0.5A

V_GS= 10V, V_DS= 7.5V

V_DS=10V, I_D= 0.2A

V_GS= 0V, I_S= 115mA

On-State Drain Current

0.5

⎯

1.0

⎯

0.78

I_D(ON)

g_FS

⎯

1.5

Forward Transconductance

Diode Forward Voltage

V_SD

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C_iss

C_oss

C_rss

⎯

V_DS= 25V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

2.0

5.0

_DS= 0V, V_GS= 0V,

Gate resistance

120

R_g

⎯

f = 1.0MHz

223

Total Gate Charge (V_GS= 4.5V)

Gate-Source Charge

Q_g

Q_gs

Q_gd

⎯

V_DS= 10V, I_D= 250mA

Gate-Drain Charge

178

SWITCHING CHARACTERISTICS (Note 9)

Turn-On Delay Time

2.8

3.0

7.6

5.6

t_D(on)

t_r

t_D(off)

t_f

⎯

_DD= 30V, I_D= 0.2A,

Turn-On Rise Time

R_L= 150Ω, V_GEN= 10V,

R_GEN= 25Ω

Turn-Off Delay Time

Turn-Off Fall Time

Notes:

6. Device mounted on FR-4 PCB, with minimum recommended pad layout

7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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www.diodes.com

August 2012

2N7002

Document number: DS11303 Rev. 31 - 2

2N7002

1.0

0.8

0.6

0.4

0.2

0.4

0.6

0.8

1.0

V_DS, DRAIN-SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

Fig. 1 On-Region Characteristics

Fig. 2 On-Resistance vs. Drain Current

3.0

2.5

I_D= 500mA

I_D= 50mA

2.0

1.5

1.0

V_GS= 10V,

I_D= 200mA

-55 -30

T_j, JUNCTION TEMPERATURE (

Fig. 3 On-Resistance vs. Junction Temperature

-5

70 95

120 145

10 12 14 16 18

V_GS, GATE TO SOURCE VOLTAGE (V)

Fig. 4 On-Resistance vs. Gate-Source Voltage

400

350

300

250

200

150

100

T_A, AMBIENT TEMPERATURE (

Fig. 6 Max Power Dissipation vs. Ambient Temperature

125 150 175

0.2

0.6

I_D, DRAIN CURRENT (A)

Fig. 5 Typical Transfer Characteristics

0.8

100

200

0.4

°C)

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August 2012

2N7002

Document number: DS11303 Rev. 31 - 2

2N7002

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT23

Dim

Min

Max

0.51

1.40

2.50

1.03 0.915

0.60 0.535

Typ

0.40

1.30

2.40

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013 0.10

0.903 1.10

2.05

3.00

1.83

2.90

0.05

1.00

0.400

0.55

0.11

0.45

0.085 0.18

0° 8°

0.61

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

2.9

0.8

0.9

2.0

1.35

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August 2012

2N7002

Document number: DS11303 Rev. 31 - 2

2N7002

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

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August 2012

2N7002

Document number: DS11303 Rev. 31 - 2

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2N7002-7产品参数

型号:	2N7002-7
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	DIODES INC
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	0.115 A
最大漏极电流 (ID)：	0.115 A
最大漏源导通电阻：	7.5 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	5 pF
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0
湿度敏感等级：	1
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	235
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.3 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Tin/Lead (Sn80Pb20)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	10
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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