2 S A1 6 9 3
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466)
Application : Audio and General Purpose
■Absolute maximum ratings
■Electrical Characteristics
External Dimensions MT-100(TO3P)
(Ta=25°C)
(Ta=25°C)
Symbol
2SA1693
–10max
–10max
–80min
50min
Symbol
2SA1693
Conditions
Unit
µA
µA
V
Unit
±0.2
4.8
±0.4
15.6
ICBO
VCBO
VCEO
VEBO
IC
VCB=–80V
–80
V
±0.1
2.0
9.6
IEBO
VEB=–6V
–80
V
V(BR)CEO
hFE
IC=–50mA
–6
V
a
b
±0.1
ø3.2
VCE=–4V, IC=–2A
IC=–2A, IB=–0.2A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
–6
–3
A
VCE(sat)
fT
–1.5max
20typ
IB
V
MHz
pF
A
PC
60(Tc=25°C)
150
W
°C
°C
2
COB
150typ
Tj
3
Tstg
+0.2
-0.1
+0.2
-0.1
to
–55 +150
to
to
to
hFE Rank O(50 100), P(70 140), Y(90 180)
1.05
0.65
1.4
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
Weight : Approx 6.0g
a. Type No.
–30
10
–3
–10
5
–0.3
0.3
0.18typ
1.10typ 0.21typ
b. Lot No.
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=–4V)
–6
–6
–4
–2
0
–3
–4
–2
0
–2
–50mA
–30mA
–20mA
–1
IB=–10mA
IC=–6A
–4A
–2A
0
0
–1
–2
–3
–4
0
–0.5
–1.0
–1.5
0
–1
–2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=–4V)
(VCE=–4V)
5
1
300
300
125˚C
25˚C
Typ
–30˚C
100
100
50
50
30
0.5
0.3
30
–0.02
–0.1
–0.5
–1
–5 –6
1
10
100
Time t(ms)
1000 2000
–0.02
–0.1
–0.5
–1
–5 –6
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=–12V)
60
40
20
30
20
–20
–10
–5
Typ
100ms
–1
–0.5
10
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0
0
0.02
–0.1
0.05 0.1
0.5
1
5 6
–5
–10
–50
–100
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Emitter Current IE(A)
Ambient Temperature Ta(˚C)
27