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产品型号2SC2714OTE85L的Datasheet PDF文件预览

2SC2714  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)  
2SC2714  
High Frequency Amplifier Applications  
FM, RF, MIX, IF Amplifier Applications  
Unit: mm  
Small reverse transfer capacitance: C = 0.7 pF (typ.)  
re  
Low noise figure: NF = 2.5dB (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
40  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
30  
4
V
I
20  
4
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
S-MINI  
T
j
125  
JEDEC  
JEITA  
TO-236  
T
stg  
55 to 125  
SC-59  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
TOSHIBA  
2-3F1A  
Weight: 12 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 40 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
0.5  
0.5  
μA  
μA  
CBO  
CB  
EB  
E
I
= 4 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= 6 V, I = 1 mA  
40  
200  
CE  
C
Reverse transfer capacitance  
Transition frequency  
Collector-base time constant  
Noise figure  
C
V
V
V
= 6 V, f = 1 MHz  
17  
0.70  
550  
pF  
MHz  
ps  
re  
CB  
CE  
CB  
f
T
= 6 V, I = 1 mA  
C
C
rbb’  
= 6 V, I = −1 mA, f = 30 MHz  
30  
5.0  
c
E
NF  
2.5  
23  
dB  
V
= 6 V, I = −1 mA, f = 100 MHz,  
E
CC  
Figure 1  
Power gain  
G
dB  
pe  
Note: h classification R: 40 to 80, O: 70 to 140, Y: 100 to 200  
FE  
1
2010-08-24  
2SC2714  
L1: 0.8 mmφ silver plated copper wire, 4T, 10ID, 8 length  
Figure1  
NF, Gpe Test Circuit  
y Parameter (typ.)  
(1) Common emitter (V  
= 6 V, I = −1 mA, f = 100 MHz, Ta = 25°C)  
E
CE  
Characteristics  
Input conductance  
Symbol  
Typ.  
Unit  
g
2.9  
mS  
pF  
ie  
Input capacitance  
C
10.2  
0.33  
ie  
Reverse transfer admittance  
y ⎪  
re  
mS  
Phase angle of reverse transfer  
admittance  
θ
90  
40  
°
mS  
°
re  
Forward transfer admittance  
|y |  
fe  
Phase angle of forward transfer  
admittance  
θ
20  
fe  
Output conductance  
Output capacitance  
g
45  
μS  
oe  
C
1.1  
pF  
oe  
(2) Common base (V  
= 6 V, I = −1 mA, f = 100 MHz, Ta = 25°C)  
E
CE  
Characteristics  
Input conductance  
Symbol  
Typ.  
Unit  
g
34  
mS  
pF  
ib  
Input capacitance  
C
10  
0.27  
ib  
Reverse transfer admittance  
y  
rb  
mS  
Phase angle of reverse transfer  
admittance  
θ
105  
34  
°
mS  
°
rb  
Forward transfer admittance  
|y |  
fb  
Phase angle of forward transfer  
admittance  
θ
165  
fb  
Output conductance  
Output capacitance  
g
45  
μS  
ob  
C
1.1  
pF  
ob  
2
2010-08-24  
2SC2714  
Marking  
3
2010-08-24  
2SC2714  
4
2010-08-24  
2SC2714  
BASE  
5
2010-08-24  
2SC2714  
BASE  
6
2010-08-24  
2SC2714  
yref  
P
Ta  
C
120  
00  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
AMBIENT TEMPERATURE Ta ()  
7
2010-08-24  
2SC2714  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,  
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all  
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for  
Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for  
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product  
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or  
applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,  
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for  
such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public  
impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the  
aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,  
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology  
products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign  
Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software  
or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
8
2010-08-24  
配单直通车
2SC2714OTE85L产品参数
型号:2SC2714OTE85L
生命周期:Obsolete
IHS 制造商:TOSHIBA AMERICA ELECTRONIC COMPONENTS INC
Reach Compliance Code:unknown
风险等级:5.63
最大集电极电流 (IC):0.02 A
集电极-发射极最大电压:30 V
配置:SINGLE
最小直流电流增益 (hFE):70
最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3
元件数量:1
端子数量:3
最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性/信道类型:NPN
最小功率增益 (Gp):15 dB
认证状态:Not Qualified
表面贴装:YES
端子形式:GULL WING
端子位置:DUAL
晶体管应用:AMPLIFIER
晶体管元件材料:SILICON
标称过渡频率 (fT):550 MHz
Base Number Matches:1
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