LOW VCE (s a t )
2 S C4 1 3 1
Silicon NPN Epitaxial Planar Transistor
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
■
Absolute maximum ratings
External Dimensions FM100(TO3PF)
(Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
Symbol
2SC4131
Symbol
ICBO
Conditions
2SC4131
Unit
µA
µA
V
Unit
V
±0.2
5.5
±0.2
15.6
±0.2
3.45
VCBO
VCEO
VEBO
IC
100
VCB=100V
10max
10max
50min
50
15
IEBO
VEB=15V
V
V(BR)CEO
hFE
IC=25mA
V
±0.2
ø3.3
15(Pulse25)
4
VCE=1V, IC=5A
IC=5A, IB=80mA
IC=5A, IB=80mA
VCE=12V, IE=–1A
VCB=10V, f=1MHz
60 to 360
0.5max
1.2max
18typ
A
a
b
IB
VCE(sat)
VBE(sat)
fT
V
V
A
PC
60(Tc=25°C)
150
W
°C
°C
1.75
2.15
0.8
Tj
MHz
pF
Tstg
COB
210typ
–55 to +150
+0.2
-0.1
1.05
+0.2
±0.1
1.5
±0.1
0.65
-0.1
5.45
5.45
1.5
3.35
■Typical Switching Characteristics (Common Emitter)
4.4
C
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
tstg
(µs)
ton
(µs)
tf
(µs)
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
E
20
4
5
10
–5
0.08
–0.08
2.0typ
0.5typ
0.4typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=1V)
15
15
12
1.3
80mA
1.0
40mA
10
8
4
25mA
15mA
0.5
15A
5
10A
IB=7mA
0
0.002
0
0
0
2
4
6
0.01
0.1
1
2
0
0.5
1.0
1.5
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
j-a t Characteristics
(VCE=1V)
(VCE=1V)
3
1
1000
500
1000
500
Typ
0.5
0.3
100
70
100
70
1
10
100
1000
0.02
0.1
1
10 15
0.02
0.1
1
10 15
Collector Current IC(A)
Collector Current IC(A)
Time t(ms)
–
ton•tstg•tf IC Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
60
40
20
40
5
VCC 20V
IC=5A
IB1=–IB2
=80mA
tstg
10
5
1
tf
0.5
1
ton
Without Heatsink
Natural Cooling
Without Heatsink
0.1
0.08
0.1
3.5
0
0.4
0.5
1
5
10
3
5
10
50
100
0
50
100
150
Collector Current IC(A)
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
89