2 S C5 0 9 9
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907)
Absolute maximum ratings (Ta=25°C)
Electrical Characteristics
Application : Audio and General Purpose
External Dimensions FM100(TO3PF)
■
■
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
2SC5099
Symbol
Conditions
Unit
V
2SC5099
Unit
µA
µA
V
±0.2
5.5
±0.2
15.6
±0.2
3.45
120
ICBO
VCB=120V
10max
10max
80min
80
IEBO
VEB=6V
V
V(BR)CEO
hFE
IC=50mA
6
V
±0.2
ø3.3
VCE=4V, IC=2A
IC=2A, IB=0.2A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
50min
6
3
A
a
b
IB
VCE(sat)
fT
V
MHz
pF
0.5max
20typ
A
PC
60(Tc=25°C)
150
W
°C
°C
Tj
COB
110typ
1.75
0.8
2.15
+0.2
Tstg
–55 to +150
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05
-0.1
+0.2
±0.1
1.5
±0.1
0.65
-0.1
5.45
5.45
1.5
3.35
■Typical Switching Characteristics (Common Emitter)
4.4
C
Weight : Approx 6.5g
a. Type No.
b. Lot No.
VCC
(V)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
RL
(Ω)
IB2
(A)
B
E
30
3
10
–5
0.3
0.16typ
2.60typ 0.34typ
10
–0.3
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
6
6
3
4
2
0
2
4
2
0
30mA
20mA
1
IB=10mA
IC=6A
4A
2A
0.5
Base Current IB(A)
0
0
1
2
3
4
0
1.0
1.5
0
1
2
Collector-Emitter Voltage VCE(V)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
5
1
300
100
200
125˚C
100
25˚C
Typ
–30˚C
50
50
30
0.5
0.3
20
0.02
1
10
100
Time t(ms)
1000 2000
0.5
Collector Current IC(A)
0.1
0.5
1
5 6
0.02
0.1
1
5 6
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
20
10
5
60
40
20
40
30
20
1ms
10ms
DC
Typ
1
0.5
Without Heatsink
Natural Cooling
10
0
Without Heatsink
3.5
0
0.1
–0.02
–0.1
–1
–6
5
10
50
100
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Emitter Current IE(A)
Ambient Temperature Ta(˚C)
125