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产品型号2SD1006_15的Datasheet PDF文件预览

SMD Type  
Transistors  
NPN Transistors  
2SD1006  
1.70 0.1  
Features  
High collector to emitter voltage: VCEO 100V.  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
100  
Collector-emitter voltage  
Emitter-base voltage  
100  
V
5
V
Collector current  
0.7  
A
Collector current (pulse) *  
Collector l power dissipation  
Junction temperature  
IC(pu)  
Pc  
1.2  
2
A
W
Tj  
150  
Storage temperature  
Tstg  
-55 to +150  
*. PW 10ms,duty cycle 50%  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Test Conditions  
Min  
100  
100  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100 μAI  
Ic=1 mAI = 0  
= 100μAI = 0  
CB= 100 V , I = 0  
EB= 5V , I =0  
E= 0  
B
I
E
C
I
CBO  
EBO  
V
V
E
0.1  
0.1  
uA  
V
I
C
Collector-emitter saturation voltage *  
Base - emitter saturation voltage *  
Base - emitter voltage *  
V
CE(sat)  
BE(sat)  
I
I
C
=500 mA, I  
B
=50mA  
=50mA  
0.6  
V
C
=500 mA, I  
B
1.5  
V
BE  
V
V
V
V
V
CE= 10V, I  
C= 10mA  
0.55  
45  
0.68  
CE= 1V, I  
CE= 1V, I  
C
= 5mA  
200  
200  
10  
DC current gain  
*
hFE  
C= 100mA  
90  
400  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= 10V, I  
CE= 10V, I  
E
=0,f=1MHz  
pF  
f
C
= 10mA  
90  
MHz  
*. PW 350us ,duty cycle  
2%  
hFE Classification(2)  
Type  
Range  
Marking  
2SD1006-M  
2SD1006-L  
135-270  
HL  
2SD1006-K  
200-400  
HK  
90-180  
HM  
1
www.kexin.com.cn  
SMD Type  
Transistors  
NPN Transistors  
2SD1006  
Typical Characterisitics  
2
www.kexin.com.cn  
SMD Type  
Transistors  
NPN Transistors  
2SD1006  
Typical Characterisitics  
3
www.kexin.com.cn  
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