C
E
Equivalent
circuit
B
Darlington 2 S D2 0 8 2
(2kΩ)(100Ω)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382)
Application : Driver for Solenoid, Motor and General Purpose
External Dimensions FM100(TO3PF)
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
Symbol
ICBO
2SD2082
Conditions
Unit
µA
mA
V
Symbol
2SD2082
Unit
V
±0.2
5.5
±0.2
15.6
±0.2
3.45
10max
VCB=120V
VCBO
VCEO
VEBO
IC
120
IEBO
10max
VEB=6V
120
V
V(BR)CEO
hFE
120min
2000min
1.5max
2.5max
20typ
IC=10mA
6
V
±0.2
ø3.3
VCE=4V, IC=8A
IC=8A, IB=16mA
IC=8A, IB=16mA
VCE=12V, IE=–1A
VCB=10V, f=1MHz
16(Pulse26)
1
A
a
b
V
V
VCE(sat)
VBE(sat)
fT
IB
A
PC
75(Tc=25°C)
150
W
°C
°C
MHz
pF
1.75
2.15
Tj
0.8
COB
210typ
Tstg
–55 to +150
+0.2
-0.1
1.05
+0.2
±0.1
±0.1
0.65
-0.1
5.45
5.45
1.5
3.35
■Typical Switching Characteristics (Common Emitter)
1.5
4.4
Weight : Approx 2.0g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
b. Lot No.
B
C
E
40
5
8
10
–5
16
–16
0.6typ
7.0typ
1.5typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
26
20
3
16
12
8
2
IC=16A
10
8A
1
4A
4
0
0
0
0
1
2
3
4
5
6
0.2 0.5
1
5
10
50 100 200
0
1
2
Collector-Emitter Voltage VCE(V)
Base Current IB(mA)
Base-Emittor Voltage VBE(V)
–
–
–
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
j-a t Characteristics
(VCE=4V)
(VCE=4V)
5
30000
20000
10000
5000
Typ
10000
5000
1
1000
500
0.5
1000
500
100
0.2
0.5
1
5
10
16
1000 .02
0.5
1
10
16
0.1
1
10
100
1000
5
Collector Current IC(A)
Collector Current IC(A)
Time t(ms)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
80
30
20
50
Typ
10
5
60
40
1
0.5
10
Without Heatsink
Natural Cooling
20
0.1
Without Heatsink
0.05
0.03
3.5
0
0
–0.05 –0.1
–0.5
–1
–10 –16
–5
3
5
10
50
100
200
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Emitter Current IE(A)
Ambient Temperature Ta(˚C)
145