IXKF 40N60SCD1
ID25 = 38 A
VDSS = 600 V
CoolMOS Power MOSFET
with Series Schottky Diode and
Ultra Fast Antiparallel Diode
RDSon = 60 mΩ
trr
= 70 ns
in High Voltage ISOPLUS i4-PACTM
Preliminary data
E 72873
Features
MOSFET T
• fastCoolMOSpowerMOSFET-3rd generation
- High blocking voltage
- Low on resistance
- Low thermal resistance due to reduced
chip thickness
• Series Schottky diode prevents current
flow through MOSFET’s body diode
- very low forward voltage
Symbol
VDSS
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
±20
V
V
VGS
ID25
ID90
TC = 25°C
TC = 90°C
38
25
A
A
- fast switching
• Ultra fast HiPerFREDTM anti parallel diode
- low operating forward voltage
- fastandsoftreverserecovery-lowswitching
losses
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
• ISOPLUS i4-PACTM high voltage package
- isolated back surface
min.
typ. max.
RDSon
VGSth
IDSS
VGS = 10 V;ID = ID90
60
70 mΩ
3.9 V
- low coupling capacity between pins and
heatsink
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
VDS = 20 V;ID = 3 mA;
2.1
VDS = VDSS;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
0.3 mA
mA
0.5
- industry standard outline
- UL registered E 72873
IGSS
VGS = ±20 V; VDS = 0 V
100 nA
Qg
Qgs
Qgd
250
25
120
nC
nC
nC
Applications
VGS= 10 V; VDS = 350 V; ID = 50 A
Converters with
• circuit operation leading to current flow
through switches in reverse direction - e. g.
- phaseleg with inductive load
- resonant circuits
td(on)
tr
td(off)
tf
20
30
110
10
ns
ns
ns
ns
VGS= 10 V; VDS = 380 V;
ID = 50 A; RG = 1.8 Ω
• high switching frequency
Examples
RthJC
RthJH
0.45 K/W
K/W
• switched mode power supplies (SMPS)
• uninterruptable power supplies (UPS)
• DC-DC converters
with heat transfer paste
0.9
• welding converters
• converters for inductive heating
• drive converters
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
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