4128D
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage
350
200
V
7
V
DC
5
A
Collector Current
Base Current
Pulse (Note 2)
DC
ICP
10
A
IB
2
4
A
Pulse (Note 2)
IBP
A
Total Dissipation
PC
40
W
°C
°C
Junction Temperature
Storage Temperature Range
TJ
150
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
3.125
UNIT
°C/W
Junction to Case
θJC
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
IC=1mA, IB=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
350
200
7
V
IC=10mA, IB=0
IE=1mA, IC=0
V
V
VCB=350V, IE=0
VCE=200V, IB=0
VEB=7V, IC=0
100 µA
Collector-Emitter Cut-Off Current
Emitter Cut-Off Current
ICEO
50
10
µA
μA
V
IEBO
VCE(SAT)1
VCE(SAT)2
VBE(SAT)
hFE1
IC=1A, IB=0.2A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
IC=0.8A,VCE=5V
IC=3A,VCE=5V
IC=0.5A, VCE=10V
0.8
1.5
1.6
50
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
V
V
8
8
4
hFE2
Transition Frequency
Storage Time
Fall Time
fT
MHz
μs
tS
4
VCC=24V, IC=0.5A, IB1=-IB2=0.1A
tF
0.7
μs
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-029.A
www.unisonic.com.tw