42CTQ030STRL全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号42CTQ030STRL的概述

芯片42CTQ030STRL概述 42CTQ030STRL是一种广泛应用的功率MOSFET (金属氧化物半导体场效应晶体管)，其主要用于电源管理和开关电路中。这款芯片以其低导通电阻和高效能而受到电子设计工程师的青睐，适用于各种电源转换和控制应用。由于其具有较高的耐压性能和出色的热性能，42CTQ030STRL可以在高负载条件下稳定工作，成为电源转换器、 DC-DC转换器及电机驱动器等电路的重要组成部分。芯片42CTQ030STRL的详细参数 42CTQ030STRL的技术参数表如下所示： - 最大漏极至源极电压 (V_DS)：30V - 最大栅极至源极电压 (V_GS)：±20V - 最大漏极电流 (I_D)：42A（在适当的散热条件下） - 导通电阻 (R_DS(on))：约10 mΩ - 通道类型：N沟道 - 功耗 (P_D)：53W（在适当的散热条件下） - 工作温度范围：-5...

产品型号42CTQ030STRL的Datasheet PDF文件预览

Bulletin PD-21019 rev. A 07/06

42CTQ030SPbF

42CTQ030-1PbF

SCHOTTKY RECTIFIER

40 Amp

I_F(AV)= 40Amp

V_R= 30V

Description/ Features

Major Ratings and Characteristics

This center tap Schottky rectifier has been optimized for very

low forward voltage drop, with moderate leakage. The propri-

etary barrier technology allows for reliable operation up to

150° C junction temperature. Typical applications are in

switching power supplies, converters, free-wheeling diodes,

and reverse battery protection.

Characteristics

Values

Units

Rectangular

waveform

F(AV)

150° C T operation

Center tap configuration

RRM

@ tp=5μssine

1100

0.38

FSM

Very low forward voltage drop

High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

@20Apk, T =125°C

(per leg)

High frequency operation

Guard ring for enhanced ruggedness and long term

reliability

range

-55to150

°C

Lead- Free ("PbF" suffix)

Case Styles

42CTQ030-1PbF

42CTQ030SPbF

Base

Common

Cathode

Base

Common

Cathode

Common

Cathode

Common

Cathode

Anode

D²PAK

TO-262

www.irf.com

42CTQ030SPbF, 42CTQ030-1PbF

Bulletin PD-21019 rev. A 07/06

Voltage Ratings

Parameters

42CTQ030SPbF, 42CTQ030-1PbF

V_R

Max. DC Reverse Voltage (V)

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

Values Units

Conditions

I_F(AV)Max. Average Forward (Per Leg)

50%duty cycle@T_C=121°C,rectangular wave form

Current *SeeFig.5

(Per Device)

Following any rated

load condition and with

I_FSMMax. Peak One Cycle Non-Repetitive

1100

5μs Sineor3μsRect.pulse

SurgeCurrent (Per Leg) *SeeFig.7

E_ASNon-Repetitive Avalanche Energy

(Per Leg)

360

10msSineor6msRect.pulse rated V_RRMapplied

mJ T_J= 25°C, I_AS= 3Amps,L=2.90mH

I_AR

Repetitive Avalanche Current

(Per Leg)

Current decaying linearly to zero in 1μsec

Frequency limited by T_Jmax.V_A=1.5xV_Rtypical

Electrical Specifications

Parameters

Values Units

Conditions

V_FMMax. Forward Voltage Drop

0.48

0.57

0.38

@ 20A

T_J= 25 °C

(Per Leg) * See Fig. 1

(1)

@ 40A

@ 20A

T_J= 125 °C

0.51

@ 40A

I_RMMax. Reverse Leakage Current

mA T_J= 25 °C

mA T_J= 125 °C

V_R= rated V_R

(Per Leg) * See Fig. 2

(1)

183

V_F(TO)Threshold Voltage

0.22

6.76

2840

8.0

T_J= T_Jmax.

r_t

Forward Slope Resistance

mΩ

C_T

L_S

Max. Junction Capacitance(Per Leg)

Typical Series Inductance (Per Leg)

pF V_R= 5V_DC(test signal range 100Khz to 1Mhz) 25°C

nH Measured lead to lead 5mm from package body

V/ μs (Rated V_R)

dv/dt Max. Voltage Rate of Change

10000

(1) Pulse Width < 300μs, Duty Cycle <2%

Thermal-Mechanical Specifications

Parameters

Values Units

Conditions

T_J

Max. Junction Temperature Range

-55to150

2.0

°C

T_stgMax. Storage Temperature Range

R_thJCMax. Thermal Resistance Junction

toCase (Per Leg)

°C/W DC operation

R_thJCMax. Thermal Resistance Junction

toCase(Per Package)

1.0

°C/W DC operation

R_thCSTypical Thermal Resistance, Case

toHeatsink

0.50

°C/W Mounting surface,smooth and greased

Approximate Weight

Mounting Torque

2(0.07) g(oz.)

Min.

6(5)

Kg-cm

(Ibf-in)

Max.

12(10)

Marking Device

42CTQ030S

42CTQ030-1

CasestyleD²Pak

CasestyleTO-262

www.irf.com

42CTQ030SPbF, 42CTQ030-1PbF

Bulletin PD-21019 rev. A 07/06

1000

100

1000

T = 150°C

100

125°C

100°C

75°C

50°C

25°C

0.1

0.01

Reverse Voltage - V (V)

Fig.2-Typical Values Of Reverse Current

Vs. Reverse Voltage (PerLeg)

10000

1000

100

T = 150°C

T = 25°C

T = 125°C

T = 25°C

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

20 25 30

Forward Voltage Drop - V (V)

Reverse Voltage - V (V)

Fig.3-Typical Junction Capacitance

Vs. Reverse Voltage (PerLeg)

Fig.1-Max. Forward Voltage Drop Characteristics

(PerLeg)

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

0.1

Notes:

Single Pulse

(Therm a l Resist a nc e)

1. Duty factor D = t / t

2. Peak T = P_DMx Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (Seconds)

Fig.4-Max. Thermal Impedance Z_thJCCharacteristics (PerLeg)

www.irf.com

42CTQ030SPbF, 42CTQ030-1PbF

Bulletin PD-21019 rev. A 07/06

150

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

140

130

RM S Lim it

Square wave (D = 0.50)

120

80%Rated V applied

110

100

see note (2)

Average Forward Current - I

(A)

Average Forward Current - I

(A)

F( AV)

F(AV)

Fig. 5-Max. Allowable CaseTemperature

Vs. Average Forward Current (PerLeg)

Fig.6-Forward Power Loss Characteristics

(PerLeg)

1000

At Any Rated Load Condition

And With Rated V

Applied

RRM

Following Surge

100

1000

10000

Square Wave Pulse Duration - t (microsec)

Fig.7-Max. Non-Repetitive Surge Current (PerLeg)

HIG H- SPEED

SWITCH

IRFP460

DUT

FREE- WHEEL

DIODE

Rg = 25ohm

Vd = 25 Volt

C URRENT

MONITOR

40HFL40S02

Fig.8-Unclamped Inductive Test Circuit

(2) Formulaused:T_C=T_J-(Pd+Pd_REV)xR_thJC

;

Pd=ForwardPowerLoss=I_F(AV)xV_FM@(I_F(AV)/D) (seeFig.6);

Pd_REV=InversePowerLoss=V_R1xI_R(1-D); I_R@V_R1=10V

www.irf.com

42CTQ030SPbF, 42CTQ030-1PbF

Bulletin PD-21019 rev. A 07/06

Outlines Table

Conformto JEDECoutlineD²Pak(SMD-220)

Dimensions in millimeters and (inches)

Modified JEDEC outline TO-262

Dimensions in millimeters and (inches)

www.irf.com

42CTQ030SPbF, 42CTQ030-1PbF

Bulletin PD-21019 rev. A 07/06

Part Marking Information

D²PAK

PART NUMBER

DATE CODE

INTERNATIONAL

RECTIFIER

LOGO

THIS IS A 42CTQ030S

LOT CODE 8024

ASSEMBLED ON WW 02, 2000

42CTQ030S

YEAR 0 = 2000

WEEK 02

ASSEMBLY

LOT CODE

P = LEAD-FREE

TO-262

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

EXAMPLE: THIS IS A 42CTQ030-1

LOT CODE 1789

DATE CODE

ASSEMBLED ON WW 19, 1999

YEAR 9 = 1999

WEEK 19

P = LEAD-FREE

ASSEMBLY

LOT CODE

Tape & Reel Information

Dimensionsinmillimetersand(inches)

www.irf.com

42CTQ030SPbF, 42CTQ030-1PbF

Bulletin PD-21019 rev. A 07/06

Ordering Information Table

Device Code

030

TRL PbF

Current Rating (40A)

Circuit Configuration

C = Common Cathode

T = TO-220

Schottky "Q" Series

Voltage Rating (030 = 30V)

y S = D²Pak

y -1= TO-262

y none = Tube (50 pieces)

y TRL = Tape & Reel (Left Oriented - for D²Pak only)

y TRR = Tape & Reel (Right Oriented - for D²Pak only)

y none = Standard Production

y PbF = Lead-Free

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level and Lead-Free.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 07/06

www.irf.com

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42CTQ030STRL产品参数

型号:	42CTQ030STRL
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	INTERNATIONAL RECTIFIER CORP
零件包装代码：	TO-263
包装说明：	R-PSSO-G2
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.2
Is Samacsys：	N
其他特性：	FREE WHEELING DIODE; HIGH RELIABILITY
应用：	GENERAL PURPOSE
外壳连接：	CATHODE
配置：	COMMON CATHODE, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.57 V
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e0
湿度敏感等级：	1
最大非重复峰值正向电流：	1100 A
元件数量：	2
相数：	1
端子数量：	2
最高工作温度：	150 °C
最大输出电流：	20 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	225
认证状态：	Not Qualified
最大重复峰值反向电压：	30 V
子类别：	Rectifier Diodes
表面贴装：	YES
技术：	SCHOTTKY
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

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产品型号42CTQ030STRL的概述

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