4N35-V芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Schematic

Features:

• 4N2X series: 4N25, 4N26, 4N27, 4N28

• 4N3X series: 4N35, 4N36, 4N37, 4N38

• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5

• High isolation voltage between input and output

(Viso=5000 V rms)

Pin Configuration

1. Anode

• Creepage distance >7.62 mm

• Operating temperature up to +110°C

• Compact dual-in-line package

• Pb free and RoHS compliant.

• UL approved (No. E214129)

• VDE approved (No. 132249)

• SEMKO approved

2. Cathode

3. No Connection

4. Emitter

5. Collector

6. Base

• NEMKO approval

• DEMKO approval

• FIMKO approval

• CSA approved

• CQC approved

Description

The 4N2X, 4N3X, H11AX series of devices each consist of an infrared emitting diode optically

coupled to a phototransistor.

They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.

Applications

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

1

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Absolute Maximum Ratings (Ta=25℃)

Parameter

Symbol

Rating

60

Unit

mA

Forward current

I_F

Peak forward current (t = 10µs)

1

6

A

V

I_FM

V_R

Input

Reverse voltage

100

3.8

mW

mW/°C

V

Power dissipation (T_A= 25°C)

Derating factor (above 100°C)

Collector-Emitter voltage

P_D

80

V_CEO

V_CBO

V_ECO

V_EBO

Collector-Base voltage

Emitter-Collector voltage

Emitter-Base voltage

80

V

7

V

Output

7

V

150

9.0

mW

mW/°C

Power dissipation (T_A= 25°C)

Derating factor (above 100°C)

P_C

200

5000

-55 to 110

P_TOT

V_ISO

T_OPR

Total Power Dissipation

Isolation Voltage*¹

mW

V rms

°C

Operating Temperature

Storage Temperature

Soldering Temperature*²

-55 to 125

260

T_STG

T_SOL

°C

Notes:

*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6 are shorted together.

*2 For 10 seconds

2

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)

Input

Parameter

Forward voltage

Symbol

Min.

Typ.

Max.

Unit

Condition

I_F= 10mA

-

1.2

-

1.5

10

-

V

V_F

I_R

Reverse current

µA

pF

V_R= 6V

Input capacitance

30

V = 0, f = 1MHz

C_in

Output

Parameter

Symbol

I_CBO

Min

Typ.

Max.

20

Unit

nA

Condition

V_CB= 10V

Collector-Base dark current

-

4N2X

50

V

_CE= 10V, IF=0mA

_CE= 60V, IF=0mA

Collector-

H11AX

Emitter

nA

I_CEO

dark current

4N3X

-

50

V

Collector-Emitter

breakdown voltage

Collector-Base

breakdown voltage

Emitter-Collector

breakdown voltage

Emitter-Base

breakdown voltage

Collector-Emitter

capacitance

80

7

-

V

BV_CEO

BV_CBO

BV_ECO

BV_EBO

C_CE

I_c=1mA

I_C=0.1mA

-

V

I_E=0.1mA

7

-

V

I_E=0.1mA

-

8

pF

VCE=0V, f=1MHz

* Typical values at T_a= 25°C

3

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Transfer Characteristics

Parameter

4N35, 4N36,

Symbol

CTR

Min

Typ.

Max.

Unit

Condition

100

50

-

4N37

H11A1

Current

Transfer

ratio

30

H11A5

I_F= ±10mA ,V_CE= 10V

%

4N25, 4N26,

4N38,

20

-

H11A2, H11A3

4N27, 4N28,

H11A4

4N25, 4N26,

4N27, 4N28

4N35, 4N36,

4N37

10

-

0.5

0.3

I_F= 50mA, I_c= 2mA

I_F= 10mA, I_c= 0.5mA

I_F= 20mA, I_c= 4mA

Collector-

Emitter

-

H11A1,H11A2,

H11A3,H11A4,

H11A5

V_CE(sat)

V

saturation

voltage

-

0.4

4N38

-

10¹¹

-

1.0

Isolation resistance

-

R_IO

C_IO

Ω

V

_IO= 500Vdc

V_IO= 0, f = 1MHz

_CC= 10V, I_F= 10mA,

Input-output capacitance

0.2

pF

4N25, 4N26,

4N27, 4N28,

H11A1,H11A2,

V

-

3

10

12

R_L= 100Ω

See Fig. 11

H11A3,H11A4,

Turn-on

H11A5

time

Ton

Toff

µs

V_CC= 10V, I_C= 2mA,

4N35, 4N36,

4N37, 4N38

10

R_L= 100Ω, See Fig. 11

4N25, 4N26,

4N27, 4N28,

H11A1,H11A2,

H11A3,H11A4,

H11A5

V_CC= 10V, I_F= 10mA,

-

3

9

10

12

R_L= 100Ω

See Fig. 11

Turn-off

time

V_CC= 10V, I_C= 2mA,

4N35, 4N36,

4N37, 4N38

R_L= 100Ω, See Fig. 11

* Typical values at T_a= 25°C

4

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Typical Electro-Optical Characteristics Curves

5

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

V_CC

I_F

Input

Pulse

I_C

R_L

Output

Input

R_BE

10%

90%

Output

Pulse

R_IN

t_r

t_on

t_f

t_off

Figure 11. Switching Time Test Circuit & Waveforms

6

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Order Information

Part Number

4NXXY(Z)-V

or

H11AXY(Z)-V

Note

XX = Part no. for 4NXX series (25, 26, 27, 28, 35, 36, 37 or 38)

X

Y

Z

V

= Part no. for H11AX series (1, 2, 3, 4, or 5)

= Lead form option (S, S1, M or none)

= Tape and reel option (TA, TB or none).

= VDE safety (optional)

Option

None

Description

Packing quantity

65 units per tube

1000 units per reel

Standard DIP-6

M

Wide lead bend (0.4 inch spacing)

S (TA)

S (TB)

S1 (TA)

S1 (TB)

Surface mount lead form + TA tape & reel option

Surface mount lead form + TB tape & reel option

Surface mount lead form (low profile) + TA tape & reel option

Surface mount lead form (low profile) + TB tape & reel option

7

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Package Dimension (Dimensions in mm)

Standard DIP Type

Option M Type

8

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Option S Type

Option S1 Type

9

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Recommended pad layout for surface mount leadform

Device Marking

EL

4N35

YWWV

Notes

EL

denotes Everlight

4N35

Y

WW

V

denotes Device Number

denotes 1 digit Year code

denotes 2 digit Week code

denotes VDE (optional)

10

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Tape & Reel Packing Specifications

Option TA

Option TB

Direction of feed from reel

Tape dimensions

Dimension No.

A

B

Do

D1

E

F

Dimension (mm)

10.4±0.1

7.5±0.1

1.5±0.1

1.5+0.1/-0

t

1.75±0.1

7.5±0.1

Dimension No.

Po

P1

P2

W

K

Dimension (mm)

4.0±0.15

12±0.1

2.0±0.1

0.35±0.03

16.0±0.2

4.5±0.1

11

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

Precautions for Use

1. Soldering Condition

1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile

Note:

Reference: IPC/JEDEC J-STD-020D

Preheat

Temperature min (T_smin

)

150 °C

200°C

Temperature max (T_smax

)

Time (T_sminto T_smax) (t_s)

Average ramp-up rate (T_smaxto T_p)

60-120 seconds

3 °C/second max

Other

Liquidus Temperature (T_L)

217 °C

Time above Liquidus Temperature (t _L)

Peak Temperature (T_P)

60-100 sec

260°C

Time within 5 °C of Actual Peak Temperature: T_P- 5°C

Ramp- Down Rate from Peak Temperature

30 s

6°C /second max.

Time 25°C to peak temperature

Reflow times

8 minutes max.

3 times

.

12

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DATASHEET

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4N2X Series

4N3X Series

H11AX Series

DISCLAIMER

1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for

above specification.

2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in

these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the

product which does not comply with the absolute maximum ratings and the instructions included in these

specification sheets.

3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t

reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.

13

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型号:	4N35-V
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	LITE-ON TECHNOLOGY CORP
包装说明：	DIP-6
Reach Compliance Code：	compliant
HTS代码：	8541.40.80.00
风险等级：	5.55
其他特性：	UL RECOGNIZED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE
标称电流传输比：	100%
最大暗电源：	50 nA
最大正向电流：	0.06 A
最大绝缘电压：	3550 V
元件数量：	1
最高工作温度：	100 °C
最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER

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