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产品型号4N35-X009的概述

芯片4N35-X009的概述 4N35-X009是一种常见的光电隔离器，广泛应用于电子工程和电气设备中。此芯片结合了光电发射器与光电接收器的特性，可以实现电信号的传输而不需要直接的电气连接。这种设计使得4N35-X009在工业设备、通信系统以及计算机外设等领域中发挥重要作用，尤其是在需要高电压隔离的场合。芯片4N35-X009的详细参数 4N35-X009的基本参数如下： - 最大输入电流（IF）: 20 mA - 最大反向电压（VR）: 6 V - 发光二极管（LED）波长: 950 nm - 最大输出电流（IC）: 50 mA - 最大集电极-发射极电压（VCE）: 30 V - 绝缘耐压: 5000 Vrms - 工作温度范围: -25°C 到 +85°C - 封装类型: DIP-8（Dual Inline Package, 8引脚）这些参数表明4N35-X009具备较高的电...

产品型号4N35-X009的Datasheet PDF文件预览

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features

• Isolation Test Voltage 5300 V

RMS

• Interfaces with common logic families

• Input-output coupling capacitance < 0.5 pF

• Industry Standard Dual-in line 6-pin package

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

i179004

Agency Approvals

• Underwriters Laboratory File #E52744

Pb-free

• DIN EN 60747-5-2 (VDE0884)

DIN EN 60747-5-5 pending

Available with Option 1

These isolation processes and the Vishay ISO9001

quality program results in the highest isolation perfor-

mance available for a commecial plastic phototransis-

tor optocoupler.

The devices are available in lead formed configura-

tion suitable for surface mounting and are available

either on tape and reel, or in standard tube shipping

containers.

Applications

AC mains detection

Reed relay driving

Switch mode power supply feedback

Telephone ring detection

Logic ground isolation

Note:

Designing with data sheet is cover in Application Note 45

Logic coupling with high frequency noise rejection

Order Information

Part

Remarks

Description

4N35

4N36

4N37

4N38

CTR > 100 %, DIP-6

This data sheet presents five families of Vishay Indus-

try Standard Single Channel Phototransistor Cou-

plers.These families include the 4N35/ 4N36/ 4N37/

4N38 couplers.

CTR > 100 %, DIP-6

CTR > 20 %, DIP-6

Each optocoupler consists of gallium arsenide infra-

red LED and a silicon NPN phototransistor.

These couplers are Underwriters Laboratories (UL)

4N35-X006

4N35-X007

4N35-X009

4N36-X007

4N36-X009

4N37-X006

4N37-X009

CTR > 100 %, DIP-6 400 mil (option 6)

CTR > 100 %, SMD-6 (option 7)

CTR > 100 %, SMD-6 (option 9)

CTR > 100 %, SMD-6 (option 7)

CTR > 100 %, SMD-6 (option 9)

CTR > 100 %, DIP-6 400 mil (option 6)

CTR > 100 %, SMD-6 (option 9)

listed to comply with a 5300 V

age.

isolation test volt-

RMS

This isolation performance is accomplished through

Vishay double molding isolation manufacturing pro-

cess. Comliance to DIN EN 60747-5-2(VDE0884)/

DIN EN 60747-5-5 pending partial discharge isolation

specification is available for these families by ordering

option 1.

For additional information on the available options refer to

Option Information.

Document Number 83717

Rev. 1.5, 27-Jan-05

www.vishay.com

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is

not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter

Test condition

Symbol

V_R

Value

6.0

Unit

Reverse voltage

Forward current

Surge current

I_F

2.5

100

≤ 10 µs

I_FSM

P_diss

Power dissipation

Output

Parameter

Test condition

Symbol

V_CEO

Value

Unit

Collector-emitter breakdown

voltage

Emitter-base breakdown

voltage

V_EBO

7.0

Collector current

I_C

(t ≤ 1.0 ms)

100

150

Power dissipation

P_diss

Coupler

Parameter

Test condition

Symbol

V_ISO

Value

5300

Unit

Isolation test voltage

V_RMS

Creepage

Clearance

≥ 7.0

≥ 0.4

Isolation thickness between

emitter and detector

Comparative tracking index per

DIN IEC 112/VDE0303,part 1

175

10¹²

10¹¹

Isolation resistance

V_IO= 500 V, T_amb= 25 °C

_IO= 500 V, T_amb= 100 °C

R_IO

T_stg

T_amb

T_j

Ω

Storage temperature

Operating temperature

Junction temperature

Soldering temperature

- 55 to + 150

°C

- 55 to + 100

100

max. 10 s dip soldering:

distance to seating plane

≥ 1.5 mm

T_sld

260

www.vishay.com

Document Number 83717

Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter

Forward voltage¹⁾

Test condition

I_F= 10 mA

Symbol

V_F

Min

0.9

Typ.

1.3

Max

1.5

Unit

I_F= 10 mA, T_amb= - 55 °C

V_R= 6.0 V

V_F

I_R

1.3

0.1

1.7

Reverse current¹⁾

Capacitance

µA

_R= 0, f = 1.0 MHz

C_O

¹⁾Indicates JEDEC registered value

Output

Parameter

Test condition

Part

Symbol

BV_CEO

Min

Typ.

Max

Unit

Collector-emitter breakdown

voltage¹⁾

I_C= 1.0 mA

4N35

4N36

4N37

4N38

BV_CEO

BV_ECO

7.0

Emitter-collector breakdown

voltage¹⁾

I_E= 100 µA

Collector-base breakdown

voltage¹⁾

I_C= 100 µA, I_B= 1.0 µA

4N35

BV_CBO

4N36

4N37

4N38

4N35

BV_CBO

I_CEO

Collector-emitter leakage

current¹⁾

V_CE= 10 V, I_F= 0

5.0

4N36

4N37

4N38

4N35

I_CEO

5.0

µA

_CE= 10 V, I_F=0

_CE= 60 V, I_F= 0

_CE= 30 V, I_F= 0, T_amb

500

100 °C

4N36

4N37

4N38

I_CEO

500

µA

_CE= 60 V, I_F= 0, T_amb

6.0

100 °C

Collector-emitter capacitance

V_CE= 0

C_CE

¹⁾Indicates JEDEC registered value

Coupler

Parameter

Test condition

V_IO= 500 V

f = 1.0 MHz

Symbol

R_IO

Min

10¹¹

Typ.

0.5

Max

Unit

Resistance, input to output¹⁾

Capacitance (input-output)

Ω

C_IO

¹⁾Indicates JEDEC registered value

Document Number 83717

Rev. 1.5, 27-Jan-05

www.vishay.com

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Current Transfer Ratio

Parameter

DC Current Transfer Ratio¹⁾

Test condition

Part

Symbol

CTR_DC

Min

100

Typ.

Max

Unit

V_CE= 10 V, I_F= 10 mA

4N35

4N36

4N37

4N38

4N35

CTR_DC

100

_CE= 10 V, I_F= 20 mA

_CE= 10 V, I_F= 10 mA,

T_A= - 55 to + 100 °C

4N36

4N37

4N38

CTR_DC

¹⁾Indicates JEDEC registered value

Switching Characteristics

Parameter

Switching time¹⁾

Test condition

Symbol

t_on, t_off

Min

Typ.

Max

Unit

µs

I_C= 2 mA, R_L= 100 Ω, V_CC= 10 V

¹⁾Indicates JEDEC registered value

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

1.5

1.0

0.5

0.0

Normalized to:

Vce=10 V, I =10 mA, T =25°C

= –55°C

= 25°C

CTRce(sat) Vce=0.4 V

=25°C

= 85°C

NCTR(SAT)

NCTR

100

- Forward Current - mA

- LED Current - mA

i4n25_01

i4n25_02

Figure 1. Forward Voltage vs. Forward Current

Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED

Current

www.vishay.com

Document Number 83717

Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

1.5

1.0

0.5

0.0

Normalized to:

Vce=10 V, I =10 mA, T =25°C

CTRce(sat) Vce=0.4 V

50°C

=50°C

70°C

25°C

85°C

NCTR(SAT)

NCTR

100

I - LED Current - mA

- LED Current - mA

i4n25_03

i4n25_06

Figure 3. Normalized Non-saturated and Saturated CTR vs. LED

Current

Figure 6. Collector-Emitter Current vs. Temperature and LED

Current

1.5

Normalized to:

Vce=10 V, I =10 mA, T =25°C

CTRce(sat) Vce=0.4 V

1.0

0.5

0.0

=70°C

= 10 V

Typical

NCTR(SAT)

NCTR

–1

–2

100

–20

100

- LED Current - mA

- Ambient Temperature - °C

i4n25_04

i4n25_07

Figure 4. Normalized Non-saturated and saturated CTR vs. LED

Current

Figure 7. Collector-Emitter Leakage Current vs.Temp.

1.5

Normalized to:

Vcb=9.3 V, I =10 mA, T =25°C

Vce=10 V, I =10 mA, T =25°C

CTRce(sat) Vce = 0.4 V

1.0

0.5

0.0

1.0

0.5

0.0

=85°C

25°C

50°C

70°C

NCTR(SAT)

NCTR

100

I - LED Current - mA

100

- LED Current - mA

i4n25_05

i4n25_08

Figure 5. Normalized Non-saturated and saturated CTR vs. LED

Current

Figure 8. Normalized CTRcb vs. LED Current and Temp.

Document Number 83717

Rev. 1.5, 27-Jan-05

www.vishay.com

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

1000

100

2.5

2.0

=10 mA,T =25°C

Normalized to:

=5.0 V, Vth=1.5 V

I =10 mA, T =25°C

PHL

0.1

1.5

1.0

Nib, T =–20°C

PLH

Nib, T = 25°C

Nib, T = 50°C

Nib, T = 70°C

0.01

100

RL - Collector Load Resistor - kΩ

i4n25_09

i4n25_12

- LED Current - mA

Figure 9. Normalized Photocurrent vs. I_Fand Temp.

Figure 12. Propagation Delay vs. Collector Load Resistor

1.2

70°C

I_F

1.0

0.8

0.6

0.4

25°C

–20°C

t_D

t_R

V_O

Normalized to:

t_PLH

Ib=20 µA, Vce=10 V, T =25°C

=1.5 V

V_TH

t_F

t_S

t_PHL

100

1000

Ib - Base Current - µA

i4n25_10

i4n25_13

Figure 10. Normalized Non-saturated HFE vs. Base Current and

Temperature

Figure 13. Switching Timing

1.5

Normalized to:

Vce=10 V, Ib=20 µA

= 5.0 V

50°C

=25°C

70°C

25°C

1.0

F=10 KHz,

DF=50%

–20°C

0.5

0.0

=1 0 mA

Vce=0.4

100

1000

i4n25_11

i4n25_14

Ib - Base Current - µA

Figure 11. Normalized HFE vs. Base Current and Temp.

Figure 14. Switching Schematic

www.vishay.com

Document Number 83717

Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Package Dimensions in Inches (mm)

For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section.

For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.

DIL300-6 Package Dimensions

14770

DIP-6 Package Dimensions

pin one ID

.248 (6.30)

.256 (6.50)

ISO Method A

.335 (8.50)

.343 (8.70)

.300 (7.62)

typ.

.048 (0.45)

.022 (0.55)

.039

(1.00)

Min.

.130 (3.30)

.150 (3.81)

18°

4°

.114 (2.90)

.130 (3.0)

typ.

.031 (0.80) min.

3°–9°

.010 (.25)

typ.

.031 (0.80)

.035 (0.90)

.018 (0.45)

.022 (0.55)

.300–.347

(7.62–8.81)

.100 (2.54) typ.

i178004

Document Number 83717

Rev. 1.5, 27-Jan-05

www.vishay.com

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Option 7

Option 6

Option 9

.300 (7.62)

TYP.

.407 (10.36)

.391 (9.96)

.375 (9.53)

.395 (10.03)

.307 (7.8)

.291 (7.4)

.300 (7.62)

ref.

.028 (0.7)

MIN.

.180 (4.6)

.160 (4.1)

.0040 (.102)

.0098 (.249)

.012 (.30) typ.

.315 (8.0)

MIN.

.020 (.51)

.040 (1.02)

.014 (0.35)

.010 (0.25)

.400 (10.16)

.430 (10.92)

.331 (8.4)

MIN.

15° max.

18450

.315 (8.00)

min.

.406 (10.3)

MAX.

www.vishay.com

Document Number 83717

Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83717

Rev. 1.5, 27-Jan-05

www.vishay.com

4N35-X009相关文章

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QQ：2881495808 复制

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4N35-X009产品参数

型号:	4N35-X009
生命周期：	Transferred
IHS 制造商：	SIEMENS A G
包装说明：	DIP-6
Reach Compliance Code：	unknown
HTS代码：	8541.40.80.00
风险等级：	5.51
Is Samacsys：	N
其他特性：	UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE
标称电流传输比：	50%
最大暗电源：	50 nA
最大正向电流：	0.06 A
最大绝缘电压：	5300 V
元件数量：	1
最高工作温度：	100 °C
最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches：	1

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产品型号4N35-X009的概述

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