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产品型号4N35M的概述

芯片4N35M的概述 4N35M是一款广泛应用于电气隔离和信号传递的光耦合器。通过光电耦合的技术，这款芯片能够有效隔离输入和输出电路，确保系统的安全性与稳定性。在多种电路设计中，特别是用于微控制器与高压电气设备之间的接口时，4N35M显示出了其独特的优势。光耦合器通常由光发射器和光接收器组成，4N35M的发射器是一个发光二极管（LED），而接收器则是光敏晶体管（Phototransistor）。它们之间的光信号转换能够实现电信号的传输，同时隔离两者之间的电气连接，避免了电压干扰和过电流损害的风险。这种隔离在高频信号处理中的应用尤为重要。芯片4N35M的详细参数 4N35M的主要参数如下： - 发射器 - 类型：红光LED - 正向电压（Vf）：1.2V（最大值2.1V） - 正向电流（If）：20mA（推荐值） - 反向电压（Vr）：5V - 接收器 - 类型：...

产品型号4N35M的Datasheet PDF文件预览

March 2007

4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,

H11A1M, H11A2M, H11A3M, H11A4M, H11A5M

General Purpose 6-Pin Phototransistor Optocouplers

Features

Description

■ UL recognized (File # E90700, Volume 2)

■ VDE recognized (File # 102497)

– Add option V (e.g., 4N25VM)

The general purpose optocouplers consist of a gallium

arsenide infrared emitting diode driving a silicon pho-

totransistor in a 6-pin dual in-line package.

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

Functional Block Diagram

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

4NXXM, H11AXM Rev. 1.0.0

www.fairchildsemi.com

Absolute Maximum Ratings ^{(T = 25°C unless otherwise speciﬁed)}

Symbol

Parameter

Value

Units

TOTAL DEVICE

Storage Temperature

Operating Temperature

-55 to +150

-55 to +100

260 for 10 sec

250

°C

STG

OPR

Wave solder temperature (see page 8 for reﬂow solder proﬁle)

°C

SOL

Total Device Power Dissipation @ T = 25°C

Derate above 25°C

2.94

EMITTER

DC/Average Forward Input Current

Reverse Input Voltage

I (pk)

Forward Current – Peak (300µs, 2% Duty Cycle)

LED Power Dissipation @ T = 25°C

120

1.41

mW/°C

Derate above 25°C

DETECTOR

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Collector Voltage

CEO

CBO

ECO

Detector Power Dissipation @ T = 25°C

150

1.76

mW/°C

Derate above 25°C

Electrical Characteristics ^{(T = 25°C unless otherwise speciﬁed)}

Individual Component Characteristics

Symbol

EMITTER

Parameter

Test Conditions

Min.

Typ.* Max. Unit

Input Forward Voltage

I = 10mA

1.18

1.50

Reverse Leakage Current

V = 6.0V

0.001

µA

DETECTOR

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Collector Breakdown Voltage

Collector-Emitter Dark Current

Collector-Base Dark Current

Capacitance

I = 1.0mA, I = 0

100

120

CEO

CBO

ECO

I = 100µA, I = 0

= 10V, I = 0

CEO

CBO

= 10V

= 0V, f = 1 MHz

Isolation Characteristics

Symbol Characteristic

Test Conditions

Min. Typ.* Max.

Units

Input-Output Isolation Voltage

Isolation Resistance

f = 60Hz, t = 1 sec

7500

Vac(pk)

Ω

ISO

= 500 VDC

I-O

Isolation Capacitance

= &, f = 1MHz

0.2

*Typical values at T = 25°C

4NXXM, H11AXM Rev. 1.0.0

www.fairchildsemi.com

Electrical Characteristics ^{(Continued) (T = 25°C unless otherwise speciﬁed)}

Transfer Characteristics

Symbol

Parameter

Test Conditions

Device

Min. Typ.* Max. Unit

DC CHARACTERISTICS

CTR

Current Transfer Ratio,

Collector to Emitter

I = 10mA, V = 10V

4N35M, 4N36M,

4N37M

100

H11A1M

H11A5M

4N25M, 4N26M

H11A2M, H11A3M

4N27M, 4N28M

H11A4M

I = 10mA, V = 10V,

4N35M, 4N36M,

4N37M

T = -55°C

I = 10mA, V = 10V,

4N35M, 4N36M,

4N37M

T = +100°C

Collector-Emitter

Saturation Voltage

= 2mA, I = 50mA

4N25M, 4N26M,

4N27M, 4N28M,

0.5

0.3

0.4

CE (SAT)

= 0.5mA, I = 10mA

4N35M, 4N36M,

4N37M

H11A1M, H11A2M,

H11A3M, H11A4M,

H11A5M

AC CHARACTERISTICS

Non-Saturated

Turn-on Time

I = 10mA, V = 10V,

4N25M, 4N26M,

4N27M, 4N28M,

H11A1M, H11A2M,

H11A3M, H11A4,

H11A5M

µs

R = 100Ω (Fig. 11)

= 2mA, V = 10V,

4N35M, 4N36M,

4N37M

µs

R = 100Ω (Fig. 11)

Turn-off Time

I = 10mA, V = 10V,

4N25M, 4N26M,

4N27M, 4N28M,

H11A1M, H11A2M,

H11A3M, H11A4M,

H11A5M

OFF

R = 100Ω (Fig. 11)

= 2mA, V = 10V,

4N35M, 4N36M,

4N37M

R = 100Ω (Fig. 11)

* Typical values at T = 25°C

4NXXM, H11AXM Rev. 1.0.0

www.fairchildsemi.com

Typical Performance Curves

Fig. 1 LED Forward Voltage vs. Forward Current

Fig.2 Normalized CTR vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

= 5.0V

= 25°C

Normalized to

= 10 mA

= -55°C

= 25°C

= 100°C

100

- LED FORWARD CURRENT (mA)

I - FORWARD CURRENT (mA)

Fig. 4 CTR vs. RBE (Unsaturated)

Fig. 3 Normalized CTR vs. Ambient Temperature

1.4

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

= 20 mA

1.2

1.0

0.8

0.6

0.4

0.2

= 5 mA

= 10 mA

= 5 mA

= 10 mA

= 20 mA

= 5.0 V

Normalized to

= 10 mA

= 25°C

-60

-40

-20

100

1000

R - BASE RESISTANCE (kΩ)

- AMBIENT TEMPERATURE (°C)

Fig. 6 Collector-Emitter Saturation Voltage

vs. Collector Current

Fig. 5 CTR vs. RBE (Saturated)

100

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

= 25˚C

= 0.3 V

= 20 mA

= 10 mA

I = 2.5 mA

0.1

= 5 mA

= 20 mA

0.01

= 5 mA

= 10 mA

0.001

100

1000

0.01

0.1

- BASE RESISTANCE (k Ω)

- COLLECTOR CURRENT (mA)

4NXXM, H11AXM Rev. 1.0.0

www.fairchildsemi.com

Fig. 8 Normalized t vs. R

Fig. 7 Switching Speed vs. Load Resistor

1000

100

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

= 10 mA

10 V

= 2 mA

= 100 Ω

CC =

= 10 V

= 25°C

off

0.1

100

1000

10000

100000

R-LOAD RESISTOR (kΩ)

- BASE RESISTANCE (k Ω)

Fig. 10 Dark Current vs. Ambient Temperature

Fig. 9 Normalized t vs. R

off

10000

1000

100

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

= 10 V

= 25°

10 V

= 2 mA

= 100 Ω

CC =

0.1

0.01

0.001

100

1000

10000

100000

- AMBIENT TEMPERATURE (°C)

R - BASE RESISTANCE (k Ω)

TEST CIRCUIT

WAVE FORMS

V_CC= 10V

INPUT PULSE

I_C

I_F

R_L

10%

90%

INPUT

OUTPUT

OUTPUT PULSE

R_BE

t_r

t_f

t_off

t_on

Adjust

Figure 11. Switching Time Test Circuit and Waveforms

4NXXM, H11AXM Rev. 1.0.0

www.fairchildsemi.com

Package Dimensions

Through Hole

Surface Mount

0.350 (8.89)

0.320 (8.13)

0.350 (8.89)

0.320 (8.13)

Pin 1 ID

PIN 1 ID

0.390 (9.90)

0.332 (8.43)

0.260 (6.60)

0.240 (6.10)

0.260 (6.60)

0.240 (6.10)

0.070 (1.77)

0.040 (1.02)

0.070 (1.77)

0.040 (1.02)

0.320 (8.13)

0.014 (0.36)

0.010 (0.25)

0.200 (5.08)

0.115 (2.93)

0.200 (5.08)

0.115 (2.93)

0.012 (0.30)

0.008 (0.20)

0.100 (2.54)

0.015 (0.38)

0.025 (0.63)

0.020 (0.51)

0.100 [2.54]

0.020 (0.50)

0.016 (0.41)

15°

0.035 (0.88)

0.006 (0.16)

0.100 (2.54)

0.020 (0.50)

0.016 (0.41)

0.012 (0.30)

0.4" Lead Spacing

Recommended Pad Layout for

Surface Mount Leadform

0.350 (8.89)

0.320 (8.13)

0.070 (1.78)

PIN 1 ID

0.060 (1.52)

0.260 (6.60)

0.240 (6.10)

0.425 (10.79)

0.100 (2.54)

0.305 (7.75)

0.030 (0.76)

0.070 (1.77)

0.040 (1.02)

0.014 (0.36)

0.010 (0.25)

0.200 (5.08)

0.115 (2.93)

0.100 (2.54)

0.015 (0.38)

0.012 (0.30)

0.008 (0.21)

0.100 [2.54]

0.020 (0.50)

0.016 (0.41)

0.425 (10.80)

0.400 (10.16)

Note:

All dimensions are in inches (millimeters)

4NXXM, H11AXM Rev. 1.0.0

www.fairchildsemi.com

Ordering Information

Order Entry Identiﬁer

(Example)

Option

Description

No option

4N25M

4N25SM

Standard Through Hole Device

Surface Mount Lead Bend

Surface Mount; Tape and Reel

0.4" Lead Spacing

SR2

4N25SR2M

4N25TM

4N25VM

VDE 0884

4N25TVM

4N25SVM

4N25SR2VM

VDE 0884, 0.4" Lead Spacing

VDE 0884, Surface Mount

VDE 0884, Surface Mount, Tape and Reel

SR2V

Marking Information

4N25

V X YY Q

Deﬁnitions

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

One digit year code, e.g., ‘7’

Two digit work week ranging from ‘01’ to ‘53’

Assembly package code

*Note – Parts that do not have the ‘V’ option (see deﬁnition 3 above) that are marked with

date code ‘325’ or earlier are marked in portrait format.

4NXXM, H11AXM Rev. 1.0.0

www.fairchildsemi.com

Carrier Tape Specification

12.0 ± 0.1

2.0 ± 0.05

4.5 ± 0.20

Ø1.5 MIN

1.75 ± 0.10

0.30 ± 0.05

4.0 ± 0.1

11.5 ± 1.0

24.0 ± 0.3

9.1 ± 0.20

21.0 ± 0.1

Ø1.5 ± 0.1/-0

10.1 ± 0.20

0.1 MAX

User Direction of Feed

Reflow Profile

300

280

260

240

220

200

180

160

140

120

100

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

°C

1.822°C/Sec Ramp up rate

33 Sec

120

180

270

360

Time (s)

4NXXM, H11AXM Rev. 1.0.0

www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an

exhaustive list of all such trademarks.

ACEx^®

TinyLogic^®

TINYOPTO¥

TinyPower¥

TinyWire¥

TruTranslation¥

PSerDes¥

UHC^®

UniFET¥

VCX¥

Wire¥

HiSeC¥

i-Lo¥

Programmable Active Droop¥

QFET^®

QS¥

QT Optoelectronics¥

Quiet Series¥

RapidConfigure¥

RapidConnect¥

ScalarPump¥

SMART START¥

SPM^®

STEALTH™

SuperFET¥

SuperSOT¥-3

SuperSOT¥-6

SuperSOT¥-8

SyncFET™

Across the board. Around the world.¥

ActiveArray¥

Bottomless¥

Build it Now¥

CoolFET¥

ImpliedDisconnect¥

IntelliMAX¥

ISOPLANAR¥

MICROCOUPLER¥

MicroPak¥

MICROWIRE¥

MSX¥

CROSSVOLT¥

CTL™

Current Transfer Logic™

DOME¥

MSXPro¥

OCX¥

E²CMOS¥

EcoSPARK^®

EnSigna¥

OCXPro¥

OPTOLOGIC^®

OPTOPLANAR^®

PACMAN¥

POP¥

FACT Quiet Series™

FACT^®

FAST^®

Power220^®

Power247^®

PowerEdge¥

PowerSaver¥

PowerTrench^®

FASTr¥

TCM¥

The Power Franchise^®

™

FPS¥

FRFET^®

GlobalOptoisolator¥

GTO¥

TinyBoost¥

TinyBuck¥

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER

ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,

which, (a) are intended for surgical implant into the body or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

device, or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary

First Production

Full Production

Not In Production

This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed

Obsolete

This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve

design.

This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for

reference information only.

Rev. I24

4NXXM, H11AXM Rev. 1.0.0

www.fairchildsemi.com

4N35M相关文章

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4N35M产品参数

型号:	4N35M
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	DIP-6
Reach Compliance Code：	unknown
风险等级：	5.61
其他特性：	UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE
标称电流传输比：	100%
最大暗电源：	50 nA
最大正向电流：	0.06 A
最大绝缘电压：	7500 V
JESD-609代码：	e3
元件数量：	1
最高工作温度：	100 °C
最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER
端子面层：	MATTE TIN
Base Number Matches：	1

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