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产品型号4N37-X007的Datasheet PDF文件预览

4N35-X, 4N36-X, 4N37-X, 4N38  
www.vishay.com  
Vishay Semiconductors  
Optocoupler, Phototransistor Output, with Base Connection  
FEATURES  
• Isolation test voltage 5000 VRMS  
• Interfaces with common logic families  
1
6
A
C
B
C
E
• Input-output coupling capacitance < 0.5 pF  
• Industry standard dual-in-line 6 pin package  
5
4
2
3
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
NC  
APPLICATIONS  
• AC mains detection  
i179004-14  
• Reed relay driving  
DESCRIPTION  
• Switch mode power supply feedback  
• Telephone ring detection  
• Logic ground isolation  
This datasheet presents five families of Vishay industry  
standard single channel phototransistor couplers. These  
families include the 4N35, 4N36, 4N37, 4N38 couplers.  
• Logic coupling with high frequency noise rejection  
Each optocoupler consists of gallium arsenide infrared LED  
and a silicon NPN phototransistor.  
AGENCY APPROVALS  
These couplers are Underwriters Laboratories (UL) listed to  
comply with a 5000 VRMS isolation test voltage.  
• UL file no. E52744 (pending)  
• cUL tested to CSA 22.2 bulletin 5A  
This isolation performance is accomplished through Vishay  
double molding isolation manufacturing process. Comliance  
to DIN EN 60747-5-5 partial discharge isolation specification  
is available for these families by ordering option 1.  
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5  
(pending), available with option 1  
• BSI: EN 60065, EN 60950-1  
These isolation processes and the Vishay ISO9001 quality  
program results in the highest isolation performance available  
for a commecial plastic phototransistor optocoupler.  
• FIMKO  
• CQC  
The devices are available in lead formed configuration suitable  
for surface mounting and are available either on tape and reel,  
or in standard tube shipping containers.  
Note  
For additional design information see application note 45  
normalized curves  
ORDERING INFORMATION  
DIP-6  
Option 6  
4
N
3
x
-
X
0
#
#
T
7.62 mm  
Option 7  
10.16 mm  
Option 9  
PART NUMBER  
PACKAGE OPTION  
TAPE  
AND  
REEL  
> 8 mm  
8 mm typ.  
CTR (%)  
AGENCY CERTIFIED/PACKAGE  
10 mA  
20 mA  
UL, cUL, BSI, FIMKO  
DIP-6  
100  
4N36-X000  
20  
4N38  
4N35-X000  
4N35-X006  
4N37-X000  
4N37-X006  
4N37-X007  
4N37-X009  
DIP-6, 400 mil, option 6  
SMD-6, option 7  
SMD-6, option 9  
VDE, UL, cUL, BSI, FIMKO  
DIP-6  
DIP-6, 400 mil, option 6  
SMD-6, option 7  
SMD-6, option 9  
-
-
4N35-X007T (1)  
4N35-X009T (1)  
4N36-X007  
4N36-X009T (1)  
4N38-X007T (1)  
4N38-X009T  
100  
20  
4N35-X001  
4N35-X016  
4N35-X017T (1)  
4N35-X019T  
-
-
-
-
4N37-X001  
-
-
-
-
-
-
-
Notes  
Additional options may be possible, please contact sales office.  
Also available in tubes; do not put T on end.  
(1)  
Rev. 1.8, 16-Jan-12  
Document Number: 83717  
1
For technical questions, contact: optocoupleranswers@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
4N35-X, 4N36-X, 4N37-X, 4N38  
www.vishay.com  
Vishay Semiconductors  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
INPUT  
Reverse voltage  
VR  
IF  
6
V
mA  
A
Forward current  
60  
2.5  
70  
Surge current  
t 10 μs  
IFSM  
Pdiss  
Power dissipation  
OUTPUT  
mW  
Collector emitter breakdown voltage  
Emitter base breakdown voltage  
Collector current  
VCEO  
VEBO  
IC  
70  
7
V
V
50  
mA  
mA  
mW  
Collector peak current  
Output power dissipation  
COUPLER  
tp/T = 0.5, tp 10 ms  
ICM  
100  
150  
Pdiss  
Isolation test voltage  
Creepage distance  
Clearance distance  
t = 1 s  
VISO  
5000  
7  
VRMS  
mm  
7  
mm  
Isolation thickness between emitter  
and detector  
0.4  
mm  
Comparative tracking index  
DIN IEC 112/VDE 0303, part 1  
175  
1012  
1011  
VIO = 500 V, Tamb = 25 °C  
RIO  
RIO  
Ω
Ω
Isolation resistance  
VIO = 500 V, Tamb = 100 °C  
Storage temperature  
Operating temperature  
Soldering temperature (1)  
Tstg  
Tamb  
Tsld  
- 55 to + 150  
- 55 to + 100  
260  
°C  
°C  
°C  
2 mm from case, 10 s  
Notes  
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not  
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
maximum ratings for extended periods of the time can adversely affect reliability.  
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through  
hole devices (DIP).  
(1)  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
INPUT  
IF = 10 mA  
IF = 10 mA, Tamb = - 55 °C  
VR = 6 V  
VF  
VF  
IR  
1.2  
1.3  
0.1  
25  
1.5  
1.7  
10  
V
V
Forward voltage (1)  
0.9  
Reverse current (1)  
Capacitance  
OUTPUT  
μA  
pF  
V
R = 0 V, f = 1 MHz  
CO  
4N35  
4N36  
4N37  
4N38  
BVCEO  
BVCEO  
BVCEO  
BVCEO  
30  
30  
30  
80  
V
V
V
V
Collector emitter breakdown  
voltage (1)  
IC = 1 mA  
Emitter collector breakdown  
voltage (1)  
IE = 100 μA  
BVECO  
7
V
4N35  
4N36  
4N37  
4N38  
BVCBO  
BVCBO  
BVCBO  
BVCBO  
70  
70  
70  
80  
V
V
V
V
Collector base breakdown  
voltage (1)  
IC = 100 μA, IB = 1 μA  
Rev. 1.8, 16-Jan-12  
Document Number: 83717  
2
For technical questions, contact: optocoupleranswers@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
4N35-X, 4N36-X, 4N37-X, 4N38  
www.vishay.com  
Vishay Semiconductors  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
OUTPUT  
VCE = 10 V, IF = 0  
4N35  
4N36  
4N37  
4N38  
4N35  
4N36  
4N37  
ICEO  
ICEO  
ICEO  
ICEO  
ICEO  
ICEO  
ICEO  
5
5
5
50  
50  
nA  
nA  
nA  
nA  
μA  
μA  
μA  
V
V
CE = 10 V, IF = 0  
CE = 60 V, IF = 0  
50  
50  
Collector emitter leakage current (1)  
500  
500  
500  
V
CE = 30 V, IF = 0,  
amb = 100 °C  
T
V
CE = 60 V, IF = 0,  
amb = 100 °C  
4N38  
ICEO  
CCE  
6
6
μA  
pF  
T
Collector emitter capacitance  
coupler  
VCE = 0  
Resistance, input output (1)  
VIO = 500 V  
f = 1 MHz  
RIO  
CIO  
1011  
Ω
Capacitance, input output  
0.5  
pF  
Notes  
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering  
evaluation. Typical values are for information only and are not part of the testing requirements.  
Indicates JEDEC registered value.  
(1)  
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
4N35  
4N36  
4N37  
4N38  
4N35  
4N36  
4N37  
4N38  
SYMBOL  
CTRDC  
CTRDC  
CTRDC  
CTRDC  
CTRDC  
CTRDC  
CTRDC  
CTRDC  
MIN.  
100  
100  
100  
20  
TYP.  
MAX.  
UNIT  
%
VCE = 10 V, IF = 10 mA  
%
%
V
CE = 10 V, IF = 20 mA  
%
(1)  
IC/IF  
40  
50  
50  
50  
30  
%
40  
%
VCE = 10 V, IF = 10 mA,  
TA = - 55 °C to + 100 °C  
40  
%
%
Note  
(1)  
Indicates JEDEC registered values.  
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Turn-on time (1)  
Turn-off time (1)  
TEST CONDITION  
SYMBOL  
MIN.  
TYP.  
10  
MAX.  
UNIT  
μs  
VCC = 5 V, IC = 2 mA, RL = 100 Ω  
VCC = 5 V, IC = 2 mA, RL = 100 Ω  
ton  
toff  
10  
μs  
Note  
(1)  
Indicates JEDEC registered values.  
+ 5 V  
IF  
I
I
F
F
0
0
t p  
t
IC  
100 %  
90 %  
R
= 50 Ω  
= 0.01  
G
t
p
T
t
= 50 µs  
p
10 %  
0
Channel I  
Channel II  
Oscilloscope  
tr  
t
R
C
= 1 MΩ  
= 20 pF  
L
L
td  
ton  
tf  
toff  
ts  
50 Ω  
RL  
tp  
td  
tr  
Pulse duration  
Delay time  
Rise time  
t
t
Storage time  
Fall time  
Turn-off time  
s
f
toff (= ts + tf)  
t
on (= td + tr)  
Turn-on time  
95 10804-3  
96 11698  
Fig. 1 - Test Circuit, Non-Saturated Operation  
Fig. 2 - Switching Times  
Rev. 1.8, 16-Jan-12  
Document Number: 83717  
3
For technical questions, contact: optocoupleranswers@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
4N35-X, 4N36-X, 4N37-X, 4N38  
www.vishay.com  
Vishay Semiconductors  
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
10 000  
1000  
100  
10  
IF = 0 mA  
Tamb = 0 °C  
Tamb = - 25 °C  
Tamb = - 40 °C  
Tamb = - 55 °C  
VCE = 40 V  
VCE = 24 V  
1
VCE = 12 V  
Tamb = 25 °C  
Tamb = 50 °C  
Tamb = 75 °C  
Tamb = 100 °C  
0.1  
0.01  
0.001  
0.1  
1
10  
100  
- 60 - 40 - 20  
0
20 40 60 80 100  
IF - Forward Current (mA)  
T
amb - Ambient Temperature (°C)  
Fig. 3 - Forward Voltage vs. Forward Current  
Fig. 6 - Leakage Current vs. Ambient Temperature  
60  
50  
1.2  
VCE = 5 V  
IF = 10 mA  
IF = 30 mA  
1.0  
IF = 5 mA  
40  
0.8  
IF = 20 mA  
30  
0.6  
IF = 15 mA  
IF = 1 mA  
20  
0.4  
IF = 10 mA  
10  
0
0.2  
IF = 5 mA  
0
0
1
2
3
4
5
6
7
8
- 60 - 40 - 20  
0
20 40 60 80 100  
V
CE - Collector Emitter Voltage (NS) (V)  
T
amb - Ambient Temperature (°C)  
Fig. 4 - Collector Current vs. Collector Emitter Voltage (NS)  
Fig. 7 - Normalized CTR (NS) vs. Ambient Temperature  
25  
1.2  
VCE = 0.4 V  
IF = 10 mA  
IF = 25 mA  
1.0  
20  
IF = 5 mA  
0.8  
15  
IF = 10 mA  
0.6  
10  
IF = 1 mA  
0.4  
IF = 5 mA  
IF = 2 mA  
5
0.2  
IF = 1 mA  
0
0
0
0.1  
0.2  
0.3  
0.4  
- 60 - 40 - 20  
0
20 40 60 80 100  
VCE - Collector Emitter Voltage (sat) (V)  
T
amb - Ambient Temperature (°C)  
Fig. 5 - Collector Current vs. Collector Emitter Voltage (sat)  
Fig. 8 - Normalized CTR (sat) vs. Ambient Temperature  
Rev. 1.8, 16-Jan-12  
Document Number: 83717  
4
For technical questions, contact: optocoupleranswers@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
4N35-X, 4N36-X, 4N37-X, 4N38  
www.vishay.com  
Vishay Semiconductors  
1000  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
VCE = 5 V  
VCC = 5 V  
Tamb = 25 °C  
Tamb = 0 °C  
100  
10  
1
Tamb = - 40 °C  
Tamb = - 55 °C  
Tamb = 50 °C  
Tamb = 75 °C  
Tamb = 100 °C  
0.1  
1
10  
100  
0.1  
1
10  
100  
IC - Collector Current (mA)  
I
F - Forward Current (mA)  
Fig. 9 - Normalized CTR (NS) vs. Forward Current  
Fig. 12 - CTR Frequency vs. Collector Current  
1.2  
1000  
VCE = 0.4 V  
VCE = 5 V, IF = 10 mA  
toff  
Tamb = 25 °C  
1.0  
Tamb = 0 °C  
100  
10  
1
Tamb = - 40 °C  
0.8  
Tamb = - 55 °C  
0.6  
ton  
0.4  
0.2  
0
Tamb = 50 °C  
Tamb = 75 °C  
Tamb = 100 °C  
0.1  
0.1  
0.1  
1
10  
100  
1
10  
100  
I
F - Forward Current (mA)  
RL - Load Resistance (kΩ)  
Fig. 10 - Normalized CTR (sat) vs. Forward Current  
Fig. 13 - Switching Time vs. Load Resistance  
0
VCE = 5 V  
- 20  
- 40  
- 60  
- 80  
- 100  
- 120  
- 140  
- 160  
1
10  
100  
1000  
f - Frequency (kHz)  
Fig. 11 - CTR Frequency vs. Phase Angle  
Rev. 1.8, 16-Jan-12  
Document Number: 83717  
5
For technical questions, contact: optocoupleranswers@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
4N35-X, 4N36-X, 4N37-X, 4N38  
www.vishay.com  
Vishay Semiconductors  
PACKAGE DIMENSIONS in millimeters  
6.5 0.5  
7.3 0.5  
7.62 0.3  
1.1 0.1  
3.5 0.3  
0.5 typ.  
3.3 0.5  
2.8 0.5  
0.26  
0.5 0.1  
2.54 0.25  
7.62 to 9.98  
22530  
Option 7  
Option 6  
Option 9  
7.62 typ.  
7.62 typ.  
7.62 typ.  
0.1 0.1  
0.6 min.  
3.5 0.3  
0.1 min.  
3.5 0.3  
0.35 0.25  
3.5 0.3  
0.6 min.  
2.7 min.  
8.16 0.8  
8 min.  
10.16 typ.  
10.16 0.3  
10.3 max.  
0.76  
0.76  
R 0.25  
R 0.25  
2.54  
2.54  
1.78  
1.52  
1.78  
1.52  
8 min.  
11.05  
8 min.  
11.05  
20802-34  
PACKAGE MARKING  
4N36  
V YWW 25  
Notes  
VDE logo is only marked on option 1 parts. Option information is not marked on the part.  
Tape and reel suffix (T) is not part of the package marking.  
Rev. 1.8, 16-Jan-12  
Document Number: 83717  
6
For technical questions, contact: optocoupleranswers@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
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Revision: 02-Oct-12  
Document Number: 91000  
1
配单直通车
4N37-X007产品参数
型号:4N37-X007
生命周期:Transferred
IHS 制造商:SIEMENS A G
包装说明:DIP-6
Reach Compliance Code:unknown
HTS代码:8541.40.80.00
风险等级:5.55
其他特性:UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE
标称电流传输比:100%
最大暗电源:50 nA
最大正向电流:0.06 A
最大绝缘电压:5300 V
元件数量:1
最高工作温度:100 °C
最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
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