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产品型号5H0365R的Datasheet PDF文件预览

www.fairchildsemi.com  
KA5x03xx-SERIES  
KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,  
KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R  
Fairchild Power Switch(FPS)  
Features  
Description  
• Precision Fixed Operating Frequency (100/67/50kHz)  
• Low Start-up Current(Typ. 100uA)  
• Pulse by Pulse Current Limiting  
• Over Current Protection  
• Over Voltage Protection (Min. 25V)  
• Internal Thermal Shutdown Function  
• Under Voltage Lockout  
The Fairchild Power Switch(FPS) product family is specially  
designed for an off-line SMPS with minimal external  
components. The Fairchild Power Switch(FPS) consists of a  
high voltage power SenseFET and a current mode PWM IC.  
Included PWM controller integrates the fixed frequency  
oscillator, the under voltage lock-out, the leading edge  
blanking, the optimized gate turn-on/turn-off driver, the  
thermal shutdown protection, the over voltage protection,  
and the temperature compensated precision current sources  
for the loop compensation and the fault protection circuitry.  
Compared to a discrete MOSFET and a PWM controller or  
an RCCsolution, a Fairchild Power Switch(FPS) can reduce  
the total component count, design size and weight and at the  
same time increase efficiency, productivity, and system  
reliability. It has a basic platform well suited for the cost  
effective design in either a flyback converter or a forward  
converter  
• Internal High Voltage Sense FET  
• Auto-Restart Mode  
Applications  
• SMPS for VCR, SVR, STB, DVD & DVCD  
• SMPS for Printer, Facsimile & Scanner  
• Adaptor for Camcorder  
TO-220F-4L  
8-DIP  
1.6.7.8 Drain  
2. GND  
1
3. V  
CC  
1. GND 2. Drain 3. V  
4. FB  
CC  
4. FB 5. NC  
Internal Block Diagram  
#3 V  
CC  
#2 DRAIN  
32V  
5V  
Vref  
Internal  
bias  
SFET  
(*#3 V  
CC  
)
Good  
logic  
(*#1.6.7.8 DRAIN)  
OSC  
9V  
S
R
Q
5µA  
1mA  
#4 FB  
L.E.B  
0.1V  
2.5R  
1R  
+
(*#4 FB)  
+
S
R
#1 GND  
7.5V  
27V  
Q
Thermal S/D  
OVER VOLTAGE S/D  
+
(*#2 GND)  
Power on reset  
*Asterisk - KA5M0365RN, KA5L0365RN  
Rev.1.0.5  
©2002 Fairchild Semiconductor Corporation  
KA5X03XX-SERIES  
Absolute Maximum Ratings  
(Ta=25°C, unless otherwise specified)  
Characteristic  
Symbol  
Value  
Unit  
KA5H0365R, KA5M0365R, KA5L0365R  
Maximum Drain Voltage  
V
650  
650  
V
V
V
D,MAX  
Drain-Gate Voltage (R =1M)  
V
DGR  
GS  
Gate-Source (GND) Voltage  
Drain Current Pulsed (1)  
V
±30  
GS  
DM  
I
12.0  
3.0  
A
DC  
Continuous Drain Current (T =25°C)  
I
I
A
DC  
A
DC  
C
D
Continuous Drain Current (T =100°C)  
2.4  
C
D
Single Pulsed Avalanche Energy (2)  
E
358  
mJ  
AS  
Maximum Supply Voltage  
V
30  
V
V
CC,MAX  
Analog Input Voltage Range  
V
-0.3 to V  
75  
FB  
SD  
P
W
W/°C  
°C  
D
Total Power Dissipation  
Derating  
0.6  
Operating Junction Temperature.  
Operating Ambient Temperature.  
Storage Temperature Range.  
T
J
+160  
T
A
-25 to +85  
°C  
T
STG  
-55 to +150  
°C  
KA5H0380R, KA5M0380R, KA5L0380R  
Maximum Drain Voltage  
V
800  
800  
±30  
12.0  
3.0  
2.1  
95  
V
V
V
D,MAX  
Drain-Gate Voltage (R =1M)  
V
DGR  
GS  
Gate-Source (GND) Voltage  
Drain Current Pulsed (1)  
V
GS  
DM  
I
A
DC  
Continuous Drain Current (T =25°C)  
I
I
A
C
D
DC  
DC  
Continuous Drain Current (T =100°C)  
Single Pulsed Avalanche Energy (2)  
A
C
D
E
mJ  
V
AS  
Maximum Supply Voltage  
V
30  
CC,MAX  
Analog Input Voltage Range  
V
-0.3 to V  
75  
V
FB  
SD  
P
W
D
Total Power Dissipation  
Derating  
0.6  
W/°C  
°C  
°C  
°C  
Operating Junction Temperature.  
Operating Ambient Temperature.  
Storage Temperature Range.  
T
+160  
J
T
-25 to +85  
A
T
STG  
-55 to +150  
Note:  
1. Repetitive rating: Pulse width limited by maximum junction temperature  
2. L = 51mH, starting Tj = 25°C  
3. L = 13µH, starting Tj = 25°C  
2
KA5X03XX-SERIES  
Absolute Maximum Ratings  
(Ta=25°C, unless otherwise specified)  
Characteristic  
Symbol  
Value  
Unit  
KA5M0365RN, KA5L0365RN  
Maximum Drain Voltage  
V
650  
650  
V
V
V
D,MAX  
Drain-Gate Voltage (R =1M)  
V
DGR  
GS  
Gate-Source (GND) Voltage  
Drain Current Pulsed (1)  
V
±30  
GS  
DM  
I
12.0  
0.42  
0.28  
127  
A
DC  
Continuous Drain Current (Ta=25°C)  
Continuous Drain Current (Ta=100°C)  
Single Pulsed Avalanche Energy (2)  
Maximum Supply Voltage  
I
I
A
DC  
A
DC  
D
D
E
mJ  
AS  
V
30  
V
V
CC,MAX  
Analog Input Voltage Range  
V
-0.3 to V  
1.56  
FB  
SD  
P
W
W/°C  
°C  
D
Total Power Dissipation  
Derating  
0.0125  
+160  
Operating Junction Temperature.  
Operating Ambient Temperature.  
Storage Temperature Range.  
T
J
T
A
-25 to +85  
-55 to +150  
°C  
T
°C  
STG  
Note:  
1. Repetitive rating: Pulse width limited by maximum junction temperature  
2. L = 51mH, starting Tj = 25°C  
3. L = 13µH, starting Tj = 25°C  
3
KA5X03XX-SERIES  
Electrical Characteristics (SenseFET Part)  
(Ta = 25°C unless otherwise specified)  
Parameter  
Symbol  
Condition  
Min. Typ. Max. Unit  
KA5H0365R, KA5M0365R, KA5L0365R  
Drain-Source Breakdown Voltage  
BV  
DSS  
V
V
=0V, I =50µA  
650  
-
-
-
-
V
GS  
DS  
D
=Max. Rating, V =0V  
GS  
50  
µA  
Zero Gate Voltage Drain Current  
I
DSS  
V
V
=0.8Max. Rating,  
DS  
-
-
200  
µA  
=0V, T =125°C  
GS  
C
Static Drain-Source on Resistance (Note)  
Forward Transconductance (Note)  
Input Capacitance  
R
V
V
=10V, I =0.5A  
D
-
3.6  
-
4.5  
DS(ON)  
GS  
DS  
gfs  
=50V, I =0.5A  
D
2.0  
-
-
-
-
-
-
-
-
S
Ciss  
-
-
-
-
-
-
-
720  
40  
V
=0V, V =25V,  
DS  
GS  
Output Capacitance  
Coss  
Crss  
pF  
nS  
f=1MHz  
Reverse Transfer Capacitance  
Turn On Delay Time  
40  
td(on)  
tr  
V
=0.5BV  
, I =1.0A  
DSS  
150  
100  
150  
42  
DD  
D
(MOSFET switching  
time is essentially  
independent of  
Rise Time  
Turn Off Delay Time  
td(off)  
tf  
Fall Time  
operating temperature)  
Total Gate Charge  
(Gate-Source+Gate-Drain)  
V
V
=10V, I =1.0A,  
D
GS  
DS  
Qg  
-
-
34  
=0.5BV  
(MOSFET  
DSS  
switching time is essentially  
independent of  
operating temperature)  
nC  
Gate-Source Charge  
Qgs  
Qgd  
-
-
7.3  
-
-
Gate-Drain (Miller) Charge  
13.3  
KA5H0380R, KA5M0380R, KA5L0380R  
Drain-Source Breakdown Voltage  
BV  
DSS  
V
V
=0V, I =50µA  
800  
-
-
-
-
V
GS  
DS  
D
=Max. Rating, V =0V  
GS  
250  
µA  
Zero Gate Voltage Drain Current  
I
DSS  
V
V
=0.8Max. Rating,  
DS  
-
-
1000  
µA  
=0V, T =125°C  
GS  
C
Static Drain-Source on Resistance (Note)  
Forward Transconductance (Note)  
Input Capacitance  
R
V
V
=10V, I =0.5A  
D
-
4.0  
2.5  
779  
75.6  
24.9  
40  
5.0  
DS(ON)  
GS  
DS  
gfs  
=50V, I =0.5A  
D
1.5  
-
-
-
-
-
-
-
-
S
Ciss  
-
-
-
-
-
-
-
V
=0V, V =25V,  
DS  
GS  
Output Capacitance  
Coss  
Crss  
pF  
nS  
f=1MHz  
Reverse Transfer Capacitance  
Turn On Delay Time  
td(on)  
tr  
V
=0.5BV  
, I =1.0A  
DSS  
DD  
D
(MOSFET switching  
time is essentially  
independent of  
Rise Time  
95  
Turn Off Delay Time  
td(off)  
tf  
150  
60  
Fall Time  
operating temperature)  
Total Gate Charge  
(Gate-Source+Gate-Drain)  
V
V
=10V, I =1.0A,  
D
GS  
DS  
Qg  
-
-
34  
=0.5BV  
(MOSFET  
DSS  
switching time is  
essentially independent of  
operating temperature)  
nC  
Gate-Source Charge  
Qgs  
Qgd  
-
-
7.2  
-
-
Gate-Drain (Miller) Charge  
12.1  
Note:  
1. Pulse test: Pulse width 300µS, duty 2%  
2.  
1
R
S = ---  
4
KA5X03XX-SERIES  
Electrical Characteristics (SenseFET Part)  
(Ta = 25°C unless otherwise specified)  
Parameter  
Symbol  
Condition  
Min. Typ. Max. Unit  
KA5M0365RN, KA5L0365RN  
Drain-Source Breakdown Voltage  
BV  
DSS  
V
V
=0V, I =50µA  
650  
-
-
-
-
V
GS  
DS  
D
=Max. Rating, V =0V  
GS  
50  
µA  
Zero Gate Voltage Drain Current  
I
DSS  
V
V
=0.8Max. Rating,  
DS  
-
-
200  
µA  
=0V, T =125°C  
GS  
C
Static Drain-Source on Resistance (Note)  
Forward Transconductance (Note)  
Input Capacitance  
R
V
V
=10V, I =0.5A  
D
-
3.6  
-
4.5  
DS(ON)  
GS  
DS  
gfs  
=50V, I =0.5A  
D
2.0  
-
-
-
-
-
-
-
-
S
Ciss  
-
-
-
-
-
-
-
314.9  
47  
V
=0V, V =25V,  
DS  
GS  
Output Capacitance  
Coss  
Crss  
pF  
nS  
f=1MHz  
Reverse Transfer Capacitance  
Turn On Delay Time  
9
td(on)  
tr  
V
=0.5BV  
, I =1.0A  
DSS  
11.2  
34  
DD  
D
(MOSFET switching  
time is essentially  
independent of  
Rise Time  
Turn Off Delay Time  
td(off)  
tf  
28.2  
32  
Fall Time  
operating temperature)  
Total Gate Charge  
(Gate-Source+Gate-Drain)  
V
V
=10V, I =1.0A,  
D
GS  
DS  
Qg  
11.93  
-
=0.5BV  
(MOSFET  
DSS  
switching time is  
essentially independent of  
operating temperature)  
nC  
Gate-Source Charge  
Qgs  
Qgd  
-
1.95  
6.85  
Gate-Drain (Miller) Charge  
Note:  
1. Pulse test: Pulse width 300µS, duty 2%  
2.  
1
R
S = ---  
5
KA5X03XX-SERIES  
Electrical Characteristics (Control Part) (Continued)  
(Ta = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Test condition  
Min. Typ. Max.  
Unit  
UVLO SECTION  
Start Threshold Voltage  
Stop Threshold Voltage  
OSCILLATOR SECTION  
V
V
V
=GND  
=GND  
14  
15  
9
16  
V
V
START  
FB  
V
8.4  
9.6  
STOP  
FB  
KA5H0365R  
KA5H0380R  
Initial Accuracy  
F
90  
61  
100  
67  
110  
73  
kHz  
kHz  
OSC  
KA5M0365R  
KA5M0365RN  
KA5M0380R  
Initial Accuracy  
F
OSC  
KA5L0365R  
KA5L0365RN  
KA5L0380R  
Initial Accuracy  
F
OSC  
45  
50  
55  
kHz  
Frequency Change With Temperature (2)  
Maximum Duty Cycle  
-
-25°CTa+85°C  
-
±5  
±10  
%
%
KA5H0365R  
KA5H0380R  
Dmax  
Dmax  
62  
67  
72  
KA5M0365R  
KA5M0365RN  
KA5M0380R  
KA5L0365R  
KA5L0365RN  
KA5L0380R  
Maximum Duty Cycle  
72  
77  
82  
%
FEEDBACK SECTION  
Feedback Source Current  
Shutdown Feedback Voltage  
Shutdown Delay Current  
REFERENCE SECTION  
Output Voltage (1)  
I
Ta=25°C, 0V<Vfb<3V  
0.7  
6.9  
4
0.9  
7.5  
5
1.1  
8.1  
6
mA  
V
FB  
V
Vfb>6.5V  
SD  
Idelay  
Ta=25°C, 5VVfbV  
µA  
SD  
Vref  
Ta=25°C  
4.80 5.00 5.20  
0.3  
V
Temperature Stability (1)(2)  
Vref/T  
-25°CTa+85°C  
-
0.6 mV/°C  
CURRENT LIMIT(SELF-PROTECTION)SECTION  
Peak Current Limit  
IOVER  
Max. inductor current  
1.89 2.15 2.41  
A
PROTECTION SECTION  
Over Voltage Protection  
Thermal Shutdown Temperature (Tj) (1)  
TOTAL STANDBY CURRENT SECTION  
Start-up Current  
V
V
>24V  
25  
27  
29  
-
V
OVP  
CC  
T
-
140  
160  
°C  
SD  
I
V
V
=14V  
<28  
-
-
100  
7
170  
12  
µA  
START  
CC  
Operating Supply Current  
(Control Part Only)  
I
mA  
OP  
CC  
Note:  
1. These parameters, although guaranteed, are not 100% tested in production  
2. These parameters, although guaranteed, are tested in EDS(water test) process  
6
KA5X03XX-SERIES  
Typical Performance Characteristics(SenseFET part)  
(KA5H0365R, KA5M0365R, KA5L0365R)  
10  
10  
VGS  
Top: 15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
Bottom:4.5V  
150 oC  
1
1
o
-25 C  
25 oC  
@Notes:  
@Notes:  
1. VDS = 30V  
1. 300 s Pulse Test  
µ
2. TC = 25o  
C
2. 300 s PulseTest  
µ
0.1  
0.1  
2
4
6
8
10  
1
10  
VGS, Gate-Source Voltage [V]  
VDS, Drain-Source Voltage [V]  
Figure 2. Transfer Characteristics  
Figure 1. Output Characteristics  
7
6
5
4
3
2
1
0
Vgs=10V  
1
0.1  
Vgs=20V  
150oC  
25 oC  
@Notes :  
1. VGS=0V  
2. 300µs PulseTest  
@Note : Tj=25  
0.01  
0
1
2
3
4
5
0.4  
0.6  
0.8  
1.0  
1.2  
ID,Drain Current [A]  
V , Source-Drain Voltage [V]  
SD  
Figure 3. On-Resistance vs. Drain Current  
Figure 4. Source-Drain Diode Forward Voltage  
700  
10  
C
iss = Cgs + Cgd (Cds = shorted)  
Coss = Cds + Cgd  
rss = Cgd  
600  
500  
400  
300  
200  
100  
0
V
DS=130V  
VDS=320V  
VDS=520V  
C
8
6
4
2
0
C
iss  
Coss  
@Note: ID=3.0A  
20  
C
rss  
0
1
0
5
10  
15  
25  
10  
10  
QG,Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
Figure 6. Gate Charge vs. Gate-Source Voltage  
Figure 5. Capacitance vs. Drain-Source Voltage  
7
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
1.2  
1.1  
1.0  
0.9  
0.8  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
@ Notes :  
1. VGS = 0V  
@ Notes:  
1. VGS = 10V  
2. ID = 1.5 A  
2. ID = 250µA  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
o
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [ C]  
Figure 7. Breakdown Voltage vs. Temperature  
Figure 8. On-Resistance vs. Temperature  
2
10  
Operation in This Area  
is Limited by R DS(on)  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
10  
s
µ
1
10  
100  
1 ms  
s
µ
10 ms  
DC  
0
10  
@ Notes :  
1. TC = 25 o  
2. TJ = 150 o  
3. Single Pulse  
-1  
10  
C
C
-2  
10  
0
1
2
3
10  
10  
10  
10  
25  
50  
75  
100  
125  
150  
TC, Case Temperature [oC]  
VDS , Drain-Source Voltage [V]  
Figure 10. Max. Drain Current vs. Case Temperature  
Figure 9. Max. Safe Operating Area  
100  
D=0.5  
0.2  
0.1  
10-1  
0.05  
@ Notes :  
1. Z JC(t)=1.25 oC/W Max.  
θ
2. Duty Factor, D=t1/t2  
3. TJM-TC=PDM*Z JC(t)  
θ
0.02  
0.01  
single pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
t1 , Square Wave Pulse Duration [sec]  
Figure 11. Thermal Response  
8
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
(KA5H0380R, KA5M0380R, KA5L0380R)  
1
1
10  
10  
V
GS  
Top: 15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
Bottom:4.5V  
0
0
10  
10  
150 oC  
@Notes:  
1. 300µs PulseTest  
2. TC = 25oC  
@ Notes:  
1. VDS = 30 V  
2. 300µs PulseTest  
25 oC  
-25 oC  
-1  
-1  
10  
10  
0
1
10  
10  
2
4
6
8
10  
VDS, Drain-Source Voltage [V]  
VGS, Gate-Source Voltage [V]  
Figure 1. Output Characteristics  
Figure 2. Thansfer Characteristics  
Fig3. On-Resistance vs. Drain Current  
8
7
6
5
4
3
2
1
0
10  
Vgs=10V  
Vgs=20V  
1
25 oC  
150 oC  
@ Notes:  
1. VGS = 0V  
2. 300µs PulseTest  
@Note: Tj=25  
0.1  
0
1
2
3
4
0.4  
0.6  
0.8  
1.0  
VSD, Source-Drain Voltage [V]  
ID,Drain Current  
Figure 3. On-Resistance vs. Drain Current  
Figure 4. Source-Drain Diode Forward Voltage  
1000  
C
iss = Cgs + Cgd (Cds = shorted)  
Coss = Cds + Cgd  
rss = Cgd  
10  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
DS=160V  
C
V
DS=400V  
8
6
4
2
0
V
DS=640V  
C
iss  
Coss  
@Note: ID=3.0A  
25  
C
rss  
0
1
0
5
10  
15  
20  
30  
10  
10  
VDS, Drain-Source Voltage [V]  
QG,Total Gate Charge [nC]  
Figure 5. Capacitance vs. Drain-Source Voltage  
Figure 6. Gate Charge vs. Gate-Source Voltage  
9
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
(KA5H0380R, KA5M0380R, KA5L0380R)  
1.2  
1.1  
1.0  
0.9  
0.8  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
@ Notes :  
1. VGS = 0V  
2. ID = 250µA  
@ Notes:  
1. VGS = 10V  
2. ID = 1.5 A  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Figure 7. Breakdown Voltage vs. Temperature  
Figure 8. On-Resistance vs. Temperature  
2
10  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Operation in This Area  
is Limited by R DS(on)  
1
10  
10  
s
µ
100  
s
µ
1 ms  
10 ms  
DC  
0
10  
@ Notes :  
-1  
10  
1. T = 25 o  
C
C
2. T = 150 o  
C
J
3. Single Pulse  
-2  
10  
1
2
3
10  
10  
10  
40  
60  
80  
100  
120  
140  
TC, Case Temperature [oC]  
VDS , Drain-Source Voltage [V]  
Figure 10. Max. Drain Current vs. Case Temperature  
Figure 9. Max. Safe Operating Area  
100  
D=0.5  
@ Notes :  
0.2  
0.1  
1. Zθ JC(t)=1.25 oC/W Max.  
2. Duty Factor, D=t1/t2  
3. TJM-TC=PDM*Zθ JC(t)  
10-1  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
t1 , Square Wave Pulse Duration [sec]  
Figure 11. Thermal Response  
10  
KA5X03XX-SERIES  
Typical Performance Characteristics(SenseFET part) (Continued)  
(KA5M0365RN, KA5L0365RN)  
1
10  
VGS  
Top :  
15.0 V  
10.0 V  
8.0 V  
7.0 V  
6.5 V  
6.0 V  
101  
100  
10-1  
Bottom : 5.5 V  
0
10  
150  
-55  
25  
-1  
10  
Note :  
μ
Note  
1. 250 s Pulse Test  
2. TC = 25  
1. V = 50V  
DS μ  
2. 250 s Pulse Test  
0
10  
1
10  
2
4
6
8
10  
VDS, Drain-Source Voltage [V]  
VGS , Gate-Source Voltage [V]  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
101  
100  
10-1  
VGS = 10V  
VGS = 20V  
150  
25  
Note :  
1. V = 0V  
2. 250 s Pulse Test  
GS μ  
Note : T = 25  
J
0
1
2
3
4
5
6
7
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
ID, Drain Current [A]  
VSD , Source-Drain Voltage [V]  
Figure 3. On-Resistance vs. Drain Current  
Figure 4. Source-Drain Diode Forward Voltage  
700  
12  
10  
8
Ciss = Cgs + Cgd (Cds = shorted)  
oss = Cds + Cgd  
Crss = Cgd  
C
600  
500  
400  
300  
200  
100  
VDS = 130V  
C
C
iss  
V
= 325V  
DS  
VDS = 520V  
oss  
6
C
Note ;  
rss  
4
1. VGS = 0 V  
2. f = 1 MHz  
2
Note : ID = 3.0 A  
0
10-1  
100  
101  
0
2
4
6
8
10  
12  
VDS, Drain-Source Voltage [V]  
QG, Total Gate Charge [nC]  
Figure 5. Capacitance vs. Drain-Source Voltage  
Figure 6. Gate Charge vs. Gate-Source Voltage  
11  
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
( KA5M0365RN, KA5L0365RN)  
1.15  
2.5  
1.10  
2.0  
1.05  
1.5  
1.00  
1.0  
0.95  
Note :  
Note :  
1. VGS = 0 V  
2. ID = 250  
1. VGS = 10 V  
μ
A
0.5  
0.90  
2. ID = 1.5 A  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Figure 8. On-Resistance vs. Temperature  
Figure 7. Breakdown Voltage vs. Temperature  
0.5  
101  
Operation in This Area  
is Limited by R DS(on)  
0.4  
0.3  
0.2  
0.1  
0.0  
10 µs  
100 µs  
100  
1 ms  
10 ms  
100 ms  
1 s  
-1  
10  
10 s  
DC  
-2  
10  
-3  
10  
100  
101  
102  
25  
50  
75  
100  
125  
150  
VDS, Drain-Source Voltage [V]  
TC, Case Temperature [? ]  
Figure 10. Max. Drain Current vs. Case Temperature  
Figure 9. Max. Safe Operating Area  
D=0.5  
0.2  
10  
0.1  
0.05  
0.02  
1
0.01  
?
Notes :  
1. Z? (t) = 80 ? /W Max.  
JC  
2. Duty Factor, D=t1/t2  
3. TJM - TC = PDM * Z? (t)  
single pulse  
JC  
0.1  
1E-5  
1E-4  
1E-3  
0.01  
0.1  
1
10  
100  
1000  
t1, Square Wave Pulse Duration [sec]  
Figure 11. Thermal Response  
12  
KA5X03XX-SERIES  
Typical Performance Characteristics (Control Part) (Continued)  
(These characteristic graphs are normalized at Ta = 25°C)  
1.2  
1.15  
1.1  
1.2  
1.15  
1.1  
1.05  
1.05  
Ifb  
1
0.95  
0.9  
Fosc  
1
0.95  
0.9  
0.85  
0.8  
0.85  
0.8  
-25  
0
25  
50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Figure 2. Feedback Source Current  
Figure 1. Operating Frequency  
1.1  
1.2  
1.15  
1.1  
1.05  
1  
I
1.05  
over  
0.95  
Iop  
1
0.95  
0.9  
0.85  
0.8  
0.9  
0.85  
0.8  
-25  
0
25 50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Figure 4. Peak Current Limit  
Figure 3. Operating Supply Current  
1.5  
1.15  
1.1  
1.3  
1.1  
0.9  
0.7  
0.5  
1.05  
Istart  
Vstart  
1
0.95  
0.9  
0.85  
-25  
0
25 50 75 100 125 150  
-25  
0
25 50 75 100 125 150  
Figure 6. Start Threshold Voltage  
Figure 5. Start up Current  
13  
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
(These characteristic graphs are normalized at Ta = 25°C)  
1.15  
1.15  
1.1  
1.1  
1.05  
1.05  
1
Vstop 1  
0.95  
Dmax  
0.95  
0.9  
0.9  
0.85  
0.85  
-25  
0
25 50 75 100 125 150  
-25  
0
25 50 75 100 125 150  
Figure 8. Maximum Duty Cycle  
Figure 7. Stop Threshold Voltage  
1.2  
1.15  
1.15  
1.1  
1.05  
1.1  
1.05  
Vz  
Vsd  
1
0.95  
0.9  
1
0.95  
0.9  
0.85  
0.8  
0.85  
-25  
0
25  
50  
75 100 125 150  
-25  
0
25  
50  
75 100 125 150  
Figure 10. Shutdown Feedback Voltage  
Figure 9. V  
Zener Voltage  
CC  
1.15  
1.2  
1.15  
1.1  
1.05  
1.1  
1.05  
Idelay  
1
Vovp  
1
0.95  
0.9  
0.95  
0.9  
0.85  
0.8  
0.85  
-25  
0
25 50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Figure 12. Over Voltage Protection  
Figure 11. Shutdown Delay Current  
14  
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
(These characteristic graphs are normalized at Ta = 25°C)  
1.15  
2.5  
2
1.1  
1.05  
1.5  
Vss  
1
(
)
1
Rdson  
0.95  
0.9  
0.5  
0
0.85  
-25  
0
25  
50  
75 100 125 150  
-25  
0
25 50 75 100 125 150  
Figure 14. Static Drain-Source on Resistance  
Figure13. Soft Start Voltage  
15  
KA5X03XX-SERIES  
Package Dimensions  
TO-220F-4L  
16  
KA5X03XX-SERIES  
Package Dimensions (Continued)  
TO-220F-4L(Forming)  
17  
KA5X03XX-SERIES  
Package Dimensions (Continued)  
8-DIP  
18  
KA5X03XX-SERIES  
Ordering Information  
Product Number  
KA5H0365RTU  
Package  
Marking Code  
BV  
DSS  
F
R
DS(on)  
OSC  
TO-220F-4L  
5H0365R  
650V  
100kHz  
67kHz  
50kHz  
3.6Ω  
KA5H0365RYDTU  
TO-220F-4L(Forming)  
KA5M0365RTU  
TO-220F-4L  
5M0365R  
5L0365R  
650V  
650V  
3.6Ω  
3.6Ω  
KA5M0365RYDTU  
TO-220F-4L(Forming)  
KA5L0365RTU  
TO-220F-4L  
KA5L0365RYDTU  
TO-220F-4L(Forming)  
KA5M0365RN  
KA5L0365RN  
8-DIP  
8-DIP  
5M0365R  
5L0365R  
650V  
650V  
67kHz  
50kHz  
3.6Ω  
3.6Ω  
Product Number  
KA5H0380RTU  
Package  
TO-220F-4L  
Marking Code  
BV  
F
R
DS(on)  
DSS  
OSC  
5H0380R  
5M0380R  
5L0380R  
800V  
800V  
800V  
100kHz  
67kHz  
50kHz  
4.6Ω  
KA5H0380RYDTU  
TO-220F-4L(Forming)  
KA5M0380RTU  
TO-220F-4L  
4.6Ω  
4.6Ω  
KA5M0380RYDTU  
TO-220F-4L(Forming)  
KA5L0380RTU  
TO-220F-4L  
KA5L0380RYDTU  
TO-220F-4L(Forming)  
TU :Non Forming Type  
YDTU : Forming type  
19  
KA5X03XX-SERIES  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER  
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, and (c) whose failure to  
perform when properly used in accordance with  
instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of the  
user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
www.fairchildsemi.com  
12/12/02 0.0m 001  
Stock#DSxxxxxxxx  
2002 Fairchild Semiconductor Corporation  
配单直通车
5H32-AT-44.000产品参数
型号:5H32-AT-44.000
生命周期:Contact Manufacturer
Reach Compliance Code:compliant
风险等级:5.57
Base Number Matches:1
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