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产品型号5LN01S-TL-E的概述

芯片5LN01S-TL-E的概述及详细参数 1. 概述 5LN01S-TL-E是一款高性能的低压功率MOSFET,由领先的半导体制造商生产,主要应用于电源管理和电子设备中。由于其出色的导通特性和低的导通电阻,使得此芯片在现代电源转换电路中得到了广泛应用。同时,由于其小型封装和高效能,5LN01S-TL-E特别适合用于手持设备、便携式电子产品及其他空间受限的应用场景。 2. 详细参数 5LN01S-TL-E通过其核心参数展示了其卓越的性能特点。以下是该芯片的一些重要规格参数: - 类型:N-channel MOSFET - 最大漏源电压 (V_DS):50V - 最大漏电流 (I_D):30A - 导通电阻 (R_DS(on)):典型值为10mΩ(当V_GS为10V时) - 最大栅源电压 (V_GS):±20V - 最大功耗 (P_D):45W - 工作温度范围 (T_J):-55°C...

产品型号5LN01S-TL-E的Datasheet PDF文件预览

Ordering number : EN6561B  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
5LN01S  
Features  
Low ON-resistance  
Ultrahigh-speed switching  
2.5V drive  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
50  
±10  
0.1  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
DP  
PW 10 s, duty cycle 1%  
0.4  
A
μ
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
0.15  
150  
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
This product is designed to “ESD immunity < 200V ”, so please take care when handling.  
*
Machine Model  
*
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: SMCP  
7027-004  
• JEITA, JEDEC  
: SC-75, SOT-416  
Minimum Packing Quantity : 3,000 pcs./reel  
5LN01S-TL-E  
1.6  
0.8  
Packing Type: TL  
Marking  
0.4  
0.4  
1
2
3
YB  
TL  
1 : Gate  
2 : Source  
3 : Drain  
Electrical Connection  
0.1 MIN  
3
SANYO : SMCP  
1
2
http://semicon.sanyo.com/en/network  
62712 TKIM/41006PE MSIM TB-00002188/81000 TS(KOTO) TA-2049  
No.6561-1/7  
5LN01S  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
50  
(BR)DSS  
D
GS  
I
V
=50V, V =0V  
1
A
A
μ
DSS  
DS GS  
I
V
=±8V, V =0V  
±10  
1.3  
μ
GSS  
GS DS  
V
(off)  
|
V
=10V, I =100  
A
μ
0.4  
V
GS  
yfs  
DS  
D
Forward Transfer Admittance  
V
=10V, I =50mA  
D
0.13  
0.18  
6
S
|
DS  
R
R
R
(on)1  
(on)2  
(on)3  
I
=50mA, V =4V  
7.8  
9.9  
20  
Ω
DS  
DS  
DS  
D GS  
Static Drain-to-Source On-State Resistance  
I
D
=30mA, V =2.5V  
GS  
7.1  
10  
Ω
I
D
=10mA, V =1.5V  
GS  
Ω
Input Capacitance  
Ciss  
6.6  
4.7  
1.7  
18  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
=10V, f=1MHz  
DS  
t
t
t
t
(on)  
d
r
42  
See specied Test Circuit.  
Turn-OFF Delay Time  
Fall Time  
(off)  
190  
105  
1.57  
0.20  
0.32  
0.85  
d
f
Total Gate Charge  
Qg  
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
DS  
=10V, V =10V, I =100mA  
GS  
D
V
SD  
I =100mA, V =0V  
S GS  
1.2  
Switching Time Test Circuit  
V
=25V  
DD  
V
IN  
4V  
0V  
I
=50mA  
L
D
V
R =500Ω  
IN  
PW=10μs  
D.C.1%  
D
V
OUT  
G
5LN01S  
P.G  
50Ω  
S
Ordering Information  
Device  
Package  
SMCP  
Shipping  
3,000pcs./reel  
memo  
5LN01S-TL-E  
Pb Free  
No.6561-2/7  
5LN01S  
I
-- V  
I
D
-- V  
GS  
D
DS  
0.10  
0.09  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.20  
0.18  
0.16  
0.14  
V
=10V  
DS  
3.5V  
4.0V  
V
=1.5V  
GS  
0.12  
0.10  
0.08  
0.06  
0.04  
0.01  
0
0.02  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
IT00054  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Drain-to-Source Voltage, V  
-- V  
Gate-to-Source Voltage, V  
GS  
-- V  
IT00055  
DS  
R
(on) -- V  
R
(on) -- I  
DS D  
DS  
GS  
100  
12  
V
=4V  
Ta=25°C  
GS  
7
5
11  
10  
9
3
2
8
7
6
5
4
50mA  
10  
7
I
=30mA  
D
Ta=75°C  
25°C  
--25°C  
5
3
2
3
2
1.0  
2
2
2
3
5
7
2
3
0
1
2
3
4
5
6
7
8
9
10  
0.01  
0.1  
Gate-to-Source Voltage, V  
GS  
-- V  
IT00056  
Drain Current, I -- A  
R
IT00057  
D
R
(on) -- I  
(on) -- I  
DS  
D
DS  
D
100  
100  
V
=2.5V  
V
=1.5V  
GS  
GS  
7
5
7
5
3
2
3
2
Ta=75°C  
25°C  
--25°C  
Ta=75°C  
25°C  
--25°C  
10  
10  
7
5
7
5
3
2
3
2
1.0  
1.0  
0.001  
2
3
5
7
2
3
3
5
7
2
3
0.01  
0.1  
0.01  
IT00058  
IT00059  
Drain Current, I -- A  
Drain Current, I -- A  
D
D
R
(on) -- Ta  
yfs -- I  
| |  
D
DS  
14  
1.0  
V
=10V  
DS  
7
5
12  
10  
8
3
2
0.1  
6
7
5
4
3
2
2
0
0.01  
0.01  
3
5
7
2
3
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
0.1  
Ambient Temperature, Ta -- °C  
Drain Current, I -- A  
D
IT00060  
IT00061  
No.6561-3/7  
5LN01S  
I
S
-- V  
SW Time -- I  
SD  
D
3
2
1000  
V
V
=25V  
=4V  
V
=0V  
DD  
GS  
GS  
7
5
3
2
t (off)  
d
0.1  
t
7
5
f
100  
7
5
t
r
3
2
3
2
t (on)  
d
10  
0.01  
0.01  
0.5  
2
3
5
7
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
IT00062  
0.1  
IT00063  
Diode Forward Voltage, V  
-- V  
Drain Current, I -- A  
SD  
D
Ciss, Coss, Crss -- V  
V
-- Qg  
DS  
GS  
10  
100  
f=1MHz  
V
=10V  
DS  
=100mA  
7
9
8
7
6
5
4
3
2
I
D
5
3
2
10  
Ciss  
7
5
Coss  
3
2
Crss  
1
0
1.0  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
IT00064  
Drain-to-Source Voltage, V  
-- V  
Total Gate Charge, Qg -- nC  
IT00065  
DS  
P
D
-- Ta  
0.20  
0.15  
0.10  
0.05  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT01961  
No.6561-4/7  
5LN01S  
Embossed Taping Specication  
5LN01S-TL-E  
No.6561-5/7  
5LN01S  
Outline Drawing  
Land Pattern Example  
5LN01S-TL-E  
Mass (g) Unit  
Unit: mm  
0.003  
mm  
* For reference  
0.7  
0.6  
0.5 0.5  
No.6561-6/7  
5LN01S  
Note on usage : Since the 5LN01S is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment. The products mentioned herein  
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for new introduction or other application  
different from current conditions on the usage of automotive device, communication device, office equipment,  
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)  
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be  
solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,  
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute  
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a  
confirmation.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of June, 2012. Specications and information herein are subject  
to change without notice.  
PS No.6561-7/7  
配单直通车
5LN01S-TL-E产品参数
型号:5LN01S-TL-E
生命周期:Transferred
IHS 制造商:SANYO SEMICONDUCTOR CO LTD
包装说明:,
Reach Compliance Code:unknown
风险等级:5.21
Is Samacsys:N
Base Number Matches:1
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