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    产品型号605LP3E的Datasheet PDF文件预览

    HMC605LP3 / 605LP3E  
    v03.0809  
    GaAs PHEMT MMIC LOW NOISE  
    AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz  
    8
    Typical Applications  
    The HMC605LP3 / HMC605LP3E is ideal for:  
    Features  
    Noise Figure: 1.1 dB  
    • Wireless Infrastructure  
    Output IP3: +31 dBm  
    Gain: 20 dB  
    • Customer Premise Equipment  
    • Fixed Wireless  
    Low Loss & Failsafe Bypass Path  
    Single Supply: +3V or +5V  
    50 Ohm Matched Input / Output  
    • WiMAX & WiBro  
    • Tower Mounted Amplifiers  
    Functional Diagram  
    General Description  
    The HMC605LP3 / HMC605LP3E are versatile, high  
    dynamic range GaAs MMIC Low Noise Amplifiers that  
    integrate a low loss LNA bypass path on the IC. The  
    amplifier is ideal for WiBro & WiMAX receivers oper-  
    ating between 2.3 and 2.7 GHz and provides 1.1 dB  
    noise figure, 20 dB of gain and +31 dBm output IP3  
    from a single supply of +5V @ 74 mA. Input and out-  
    put return losses are 14 and 15 dB respectively with  
    no external matching components required. A single  
    control line (Vctl) is used to switch between LNA mode  
    and a low 2 dB loss bypass mode and reduces the  
    current consumption to 10 μA. The HMC605LP3 is  
    failsafe and will default to the bypass mode with no  
    DC power applied.  
    Electrical Specifications, TA = +25° C, Vdd = +5V  
    LNA Mode  
    Bypass Mode  
    Typ. Max.  
    Parameter  
    Units  
    Min.  
    17.5  
    Typ.  
    2.3 - 2.7  
    20.5  
    0.012  
    1.1  
    Max.  
    1.3  
    Min.  
    -3.0  
    Frequency Range  
    Gain  
    2.3 - 2.7  
    -2.0  
    GHz  
    dB  
    Gain Variation Over Temperature  
    Noise Figure  
    0.002  
    dB / °C  
    dB  
    Input Return Loss  
    14  
    13  
    13  
    dB  
    Output Return Loss  
    15  
    dB  
    Reverse Isolation  
    33  
    dB  
    Output Power for 1dB Compression (P1dB)*  
    17  
    16  
    dBm  
    Output Third Order Intercept (IP3)*  
    (-20 dBm Input Power per tone, 1 MHz tone spacing)  
    31  
    dBm  
    Supply Current (Idd)  
    74  
    -
    90  
    0.01  
    6.0  
    -
    mA  
    ns  
    LNA Mode to Bypass Mode  
    Bypass Mode to LNA Mode  
    Swtiching Speed  
    60  
    ns  
    * P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN.  
    For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
    20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
    Order On-line at www.hittite.com  
    8 - 230  
    HMC605LP3 / 605LP3E  
    v03.0809  
    GaAs PHEMT MMIC LOW NOISE  
    AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz  
    LNA – Gain, Noise Figure &  
    Power vs. Supply Voltage @ 2.5 GHz  
    8
    LNA Broadband Gain & Return Loss  
    30  
    2.5  
    2
    25  
    20  
    15  
    10  
    5
    20  
    10  
    S21  
    S11  
    S22  
    1.5  
    1
    0
    -10  
    -20  
    -30  
    -40  
    Gain  
    P1dB  
    0.5  
    0
    Noise Figure  
    4.5  
    0
    1
    2
    3
    4
    5
    6
    3
    3.5  
    4
    5
    FREQUENCY (GHz)  
    Vdd (Vdc)  
    LNA Gain vs. Temperature  
    LNA Noise Figure vs. Temperature  
    24  
    1.6  
    22  
    20  
    1.2  
    0.8  
    18  
    +25C  
    0.4  
    +25C  
    +85C  
    -40C  
    -40C  
    16  
    14  
    +85C  
    0
    2.3  
    2.3  
    2.4  
    2.5  
    FREQUENCY (GHz)  
    2.6  
    2.7  
    2.4  
    2.5  
    2.6  
    2.7  
    FREQUENCY (GHz)  
    LNA Gain vs. Vdd  
    LNA Noise Figure vs. Vdd  
    24  
    1.5  
    22  
    20  
    18  
    16  
    14  
    1.3  
    1.1  
    3V  
    5V  
    0.9  
    0.7  
    0.5  
    +3V  
    +5V  
    2.3  
    2.4  
    2.5  
    FREQUENCY (GHz)  
    2.6  
    2.7  
    2.3  
    2.4  
    2.5  
    FREQUENCY (GHz)  
    2.6  
    2.7  
    For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
    20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
    Order On-line at www.hittite.com  
    8 - 231  
    HMC605LP3 / 605LP3E  
    v03.0809  
    GaAs PHEMT MMIC LOW NOISE  
    AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz  
    8
    LNA Output Return Loss vs. Temperature  
    LNA Input Return Loss vs. Temperature  
    0
    0
    -5  
    -10  
    -15  
    -5  
    +25C  
    +85C  
    -40C  
    -10  
    -15  
    -20  
    -25  
    -30  
    -20  
    +25C  
    +85C  
    -40C  
    -25  
    -30  
    2.3  
    2.3  
    2.4  
    2.5  
    2.5  
    2.5  
    2.6  
    2.6  
    2.7  
    2.7  
    2.7  
    2.3  
    2.3  
    2.4  
    2.5  
    2.5  
    2.5  
    2.6  
    2.6  
    2.7  
    2.7  
    2.7  
    FREQUENCY (GHz)  
    FREQUENCY (GHz)  
    LNA Output IP3 vs. Temperature  
    LNA Output IP3 vs. Vdd  
    35  
    40  
    35  
    30  
    25  
    20  
    15  
    10  
    33  
    31  
    29  
    +3V  
    +5V  
    +25C  
    27  
    25  
    -40C  
    +85C  
    2.3  
    2.3  
    2.4  
    2.5  
    2.5  
    2.5  
    2.6  
    2.6  
    2.3  
    2.3  
    2.4  
    2.5  
    2.5  
    2.5  
    2.6  
    2.6  
    FREQUENCY (GHz)  
    FREQUENCY (GHz)  
    LNA Psat vs. Temperature  
    LNA Output P1dB vs. Temperature  
    24  
    24  
    +25C  
    +85C  
    -40C  
    +25C  
    +85C  
    -40C  
    22  
    20  
    18  
    16  
    14  
    22  
    20  
    18  
    16  
    14  
    2.3  
    2.4  
    2.5  
    FREQUENCY (GHz)  
    2.6  
    2.3  
    2.4  
    2.5  
    FREQUENCY (GHz)  
    2.6  
    For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
    20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
    Order On-line at www.hittite.com  
    8 - 232  
    HMC605LP3 / 605LP3E  
    v03.0809  
    GaAs PHEMT MMIC LOW NOISE  
    AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz  
    8
    LNA Output P1dB vs. Vdd  
    LNA Reverse Isolation vs.Temperature  
    20  
    0
    16  
    12  
    -10  
    +25C  
    -20  
    +85C  
    -40C  
    +3V  
    +5V  
    8
    4
    0
    -30  
    -40  
    2.3  
    2.4  
    2.5  
    FREQUENCY (GHz)  
    2.6  
    2.7  
    2.3  
    2.4  
    2.5  
    2.6  
    2.7  
    2.7  
    2.7  
    FREQUENCY (GHz)  
    Bypass Mode  
    Broadband Insertion Loss & Return Loss  
    Bypass Mode  
    Insertion Loss vs.Temperature  
    0
    0
    -1  
    -10  
    -2  
    -20  
    +25C  
    -3  
    -4  
    -5  
    +85C  
    -40C  
    S21  
    S11  
    S22  
    -30  
    -40  
    1
    2
    3
    4
    5
    6
    2.3  
    2.4  
    2.5  
    FREQUENCY (GHz)  
    2.6  
    FREQUENCY (GHz)  
    Bypass Mode  
    Input Return Loss vs.Temperature  
    Bypass Mode  
    Output Return Loss vs.Temperature  
    0
    0
    -5  
    -5  
    -10  
    -10  
    -15  
    -15  
    +25C  
    +85C  
    -40C  
    +25C  
    +85C  
    -40C  
    -20  
    -25  
    -30  
    -20  
    -25  
    -30  
    2.3  
    2.3  
    2.4  
    2.5  
    2.5  
    2.5  
    2.6  
    2.6  
    2.7  
    2.3  
    2.3  
    2.4  
    2.5  
    2.5  
    2.5  
    2.6  
    2.6  
    FREQUENCY (GHz)  
    FREQUENCY (GHz)  
    For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
    20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
    Order On-line at www.hittite.com  
    8 - 233  
    HMC605LP3 / 605LP3E  
    v03.0809  
    GaAs PHEMT MMIC LOW NOISE  
    AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz  
    8
    Absolute Maximum Ratings  
    Typical Supply Current vs. Vdd  
    Drain Bias Voltage (Vdd)  
    +8 Vdc  
    Vdd (Vdc)  
    Idd (mA)  
    RF Input Power (RFIN)  
    (Vdd = +5.0 Vdc)  
    LNA Mode +15 dBm  
    Bypass Mode +30 dBm  
    +5  
    +3  
    74  
    28  
    Channel Temperature  
    150 °C  
    Continuous Pdiss (T = 85 °C)  
    (derate 13.7 mW/°C above 85 °C)  
    890 mW  
    Truth Table  
    Thermal Resistance  
    (channel to ground paddle)  
    73 °C/W  
    LNA Mode  
    Vctl = Vdd 0.3V  
    Vctl= 0V 0.3V  
    Storage Temperature  
    Operating Temperature  
    -65 to +150° C  
    -40 to +85° C  
    Bypass Mode  
    ELECTROSTATIC SENSITIVE DEVICE  
    OBSERVE HANDLING PRECAUTIONS  
    Outline Drawing  
    NOTES:  
    1. LEADFRAME MATERIAL: COPPER ALLOY  
    2. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
    3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE  
    4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.  
    PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.  
    5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.  
    6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.  
    7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.  
    Package Information  
    Part Number  
    Package Body Material  
    Lead Finish  
    MSL Rating  
    MSL1 [1]  
    Package Marking [3]  
    605  
    XXXX  
    HMC605LP3  
    Low Stress Injection Molded Plastic  
    Sn/Pb Solder  
    605  
    XXXX  
    MSL1 [2]  
    HMC605LP3E  
    RoHS-compliant Low Stress Injection Molded Plastic  
    100% matte Sn  
    [1] Max peak reflow temperature of 235 °C  
    [2] Max peak reflow temperature of 260 °C  
    [3] 4-Digit lot number XXXX  
    For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
    20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
    Order On-line at www.hittite.com  
    8 - 234  
    HMC605LP3 / 605LP3E  
    v03.0809  
    GaAs PHEMT MMIC LOW NOISE  
    AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz  
    8
    Pin Descriptions  
    Pin Number  
    Function  
    Description  
    Interface Schematic  
    1, 2, 5, 6,  
    8, 12, 13  
    No connection necessary.  
    These pins may be connected to RF/DC ground.  
    N/C  
    This pin is AC coupled and matched to 50 Ohms.  
    See application circuit.  
    3
    4, 7, 9, 11, 15  
    10  
    RFIN  
    GND  
    These pins must be connected to RF/DC ground.  
    This pin is AC coupled  
    and matched to 50 Ohms.  
    RFOUT  
    Power supply voltage. Bypass capacitors are required. See  
    application circuit.  
    14  
    Vdd  
    16  
    Vctl  
    Mode Control Voltage. See truth table.  
    Application Circuit  
    Components  
    C1, C2  
    Value  
    100pF  
    10KpF  
    C3  
    For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
    20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
    Order On-line at www.hittite.com  
    8 - 235  
    HMC605LP3 / 605LP3E  
    v03.0809  
    GaAs PHEMT MMIC LOW NOISE  
    AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz  
    8
    Evaluation PCB  
    List of Materials for Evaluation PCB 117160 [1]  
    The circuit board used in the final application should  
    use RF circuit design techniques. Signal lines  
    should have 50 ohm impedance while the package  
    ground leads and exposed paddle should be con-  
    nected directly to the ground plane similar to that  
    shown. A sufficient number of via holes should be  
    used to connect the top and bottom ground planes.  
    The evaluation circuit board shown is available from  
    Hittite upon request.  
    Item  
    Description  
    J1 - J2  
    J3 - J6  
    C1, C2  
    C3  
    PCB Mount SMA RF Connector  
    DC Pin  
    100 pF Capacitor, 0402 Pkg.  
    10 KpF Capacitor, 0402 Pkg.  
    HMC605LP3 / HMC605LP3E Amplifier  
    117158 Evaluation Board  
    U1  
    [2]  
    PCB  
    [1] Reference this number when ordering complete evaluation PCB  
    [2] Circuit Board Material: Rogers 4350 or Arlon 25FR  
    For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
    20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
    Order On-line at www.hittite.com  
    8 - 236  
    HMC605LP3 / 605LP3E  
    v03.0809  
    GaAs PHEMT MMIC LOW NOISE  
    AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz  
    8
    Notes:  
    For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
    20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
    Order On-line at www.hittite.com  
    8 - 237  
    配单直通车
    605SJR产品参数
    型号:605SJR
    生命周期：Obsolete
    包装说明：, 3920
    Reach Compliance Code：unknown
    风险等级：5.84
    其他特性：FLAME PROOF
    JESD-609代码：e3
    安装特点：SURFACE MOUNT
    端子数量：2
    最高工作温度：155 °C
    最低工作温度：-40 °C
    封装形状：RECTANGULAR PACKAGE
    包装方法：TR, EMBOSSED, 10 INCH
    额定温度：70 °C
    电阻器类型：FIXED RESISTOR
    尺寸代码：3920
    表面贴装：YES
    技术：METAL STRIP
    端子面层：TIN
    端子形状：ONE SURFACE
    容差：5%
    Base Number Matches：1
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