60EPU02PBF原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

Bulletin PD-21079 08/05

60EPU02PbF

60APU02PbF

Ultrafast Soft Recovery Diode

Features

• Ultrafast Recovery

• 175°C Operating Junction Temperature

• Lead-Free ("PbF" suffix)

t_rr= 35ns

I_F(AV)= 60Amp

V_R= 200V

Benefits

• Reduced RFI and EMI

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description/ Applications

These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.

The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited

for HF welding, power converters and other applications where switching losses are not significant portion of the total

losses.

Absolute Maximum Ratings

Parameters

Cathode to Anode Voltage

Max

200

Units

V

V_R

I_F(AV)

I_FSM

I_FRMꢀ

Continuous Forward Current, T_C= 127°C

Single Pulse Forward Current, T_C= 25°C

Maximum Repetitive Forward Current

60

800

120

A

T_J, T_STGOperating Junction and Storage Temperatures

- 55 to 175

°C

ꢀ

Square Wave, 20kHz

Case Styles

60EPU02PbF

60APU02PbF

BASE

COMMON

CATHODE

2

BASE

COMMON

CATHODE

2

1

3

ANODE

1

ANODE

3

CATHODE

ANODE

TO-247AC (Modified)

TO-247AC

1

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60EPU02PbF, 60APU02PbF

Bulletin PD-21079 08/05

Electrical Characteristics @ T = 25°C (unless otherwise specified)

J

Parameters

Min Typ Max Units Test Conditions

V_BR, V_r

V_F

Breakdown Voltage,

Blocking Voltage

200

-

V

I_R= 100µA

Forward Voltage

-

0.98 1.08

0.81 0.88

V

I_F= 60A

I_F= 60A, T_J= 175°C

V_R= V_RRated

I_R

Reverse Leakage Current

-

50

2

-

µA

mA

pF

nH

T_J= 150°C, V_R= V_RRated

V_R= 200V

C_T

L_S

Junction Capacitance

Series Inductance

87

8.0

-

Measured lead to lead 5mm from package body

Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)

J

Parameters

Min Typ Max Units Test Conditions

t_rr

Reverse Recovery Time

-

28

50

4

35

-

ns

I_F= 1.0A, di_F/dt = 200A/µs, V_R= 30V

I_F= 60A

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

V_R= 160V

-

di_F/dt = 200A/µs

I_RRM

Peak Recovery Current

-

A

8

-

Q_rr

Reverse Recovery Charge

59

220

-

nC

-

Thermal - Mechanical Characteristics

Parameters

Min

Typ

Max

Units

R_thJC

R_thCSꢁ

Wt

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Heatsink

Weight

0.70

K/W

0.2

5.5

0.2

g

(oz)

N*m

T

Mounting Torque

Marking Device

1.2

60EPU02, 60APU02

ꢁ

Mounting Surface, Flat, Smooth and Greased

2

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60EPU02PbF, 60APU02PbF

Bulletin PD-21079 08/05

1000

100

10

1000

100

10

T

= 175˚C

125˚C

J

1

25˚C

0.1

0.01

0.001

T

= 175˚C

= 125˚C

J

0

50

100

150

200

Reverse Voltage-V_R(V)

Fig.2-Typical Values Of Reverse Current

=

25˚C

Vs. Reverse Voltage

10000

1000

100

T

= 25˚C

J

1

10

0

0.5

1

1.5

2

2.5

1

10

100

1000

Forward Voltage Drop-V_FM(V)

Reverse Voltage-V_R(V)

Fig.3-Typical Junction Capacitance

Vs. Reverse Voltage

Fig.1-Typical Forward Voltage Drop Characteristics

1

D = 0.50

D = 0.20

D = 0.10

D = 0.05

P

DM

D = 0.02

D = 0.01

0.1

t

1

t

2

Notes:

Single Pulse

(Thermal Resistance)

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

0.01

0.00001

0.0001

0.001

t1,Rectangular Pulse Duration (Seconds)

Fig.4-Max. Thermal Impedance Z_thJCCharacteristics

0.01

0.1

1

10

3

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60EPU02PbF, 60APU02PbF

Bulletin PD-21079 08/05

180

170

160

150

140

100

80

60

40

20

0

RMS Limit

D = 0.01

DC

D = 0.02

D = 0.05

D = 0.10

D = 0.20

D = 0.50

DC

130

Square wave (D = 0.50)

80% Rated Vr applied

120

110

see note (3)

100

0

20

40

60

80

100

0

20

40

60

80

100

Average Forward Current - IF_(AV)(A)

Fig.5-Max. Allowable CaseTemperature

Vs. Average Forward Current

Fig.6-Forward Power Loss Characteristics

800

70

60

50

40

30

20

10

IF = 90A

IF = 60A

IF = 30A

Vr = 160V

700

Tj = 125˚C

Tj = 25˚C

600

IF = 90A

IF = 60A

IF = 30A

500

400

300

200

100

0

Vr = 160V

Tj = 125˚C

Tj

= 25˚C

100

1000

100

1000

di _F/dt (A/µs)

di_F/dt (A/µs)

Fig.8-TypicalStoredCharge vs.di_F/dt

Fig.7-TypicalReverseRecovery time vs.di _F/dt

(3) Formulaused:T_C=T_J-(Pd+Pd_REV)xR_thJC

;

Pd=ForwardPowerLoss=I_F(AV)xV_FM@(I_F(AV)/ D) (seeFig.6);

Pd_REV=InversePowerLoss=V_R1xI_R(1-D); I_R@V_R1=80%ratedV_R

4

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60EPU02PbF, 60APU02PbF

Bulletin PD-21079 08/05

Reverse Recovery Circuit

V

R

= 200V

0.01

Ω

L = 70µH

G

D.U.T.

D

di _F/dt

dif/dt

ADJUST

IRFP250

S

Fig. 9- Reverse Recovery Parameter Test Circuit

3

t

rr

I

F

t

a

b

0

4

Q

rr

2

I

0.5

di(rec)M/dt

RRM

I

RRM

5

0.75

I

RRM

1

di /dt

f

F

1. di /dt - Rate of change of current through zero

F

4. Q_rr- Area under curve defined by t

rr

crossing

and I

RRM

t

x I

2

rr

RRM

Q

=

2. I

- Peak reverse recovery current

rr

RRM

3. t - Reverse recovery time measured from zero

5. di

/ dt - Peak rate of change of

(rec) M

current during t portion of t

rr

crossing point of negative going I to point where

F

RRM

b

a line passing through 0.75 I

extrapolated to zero current

and 0.50 I

RRM

Fig. 10 - Reverse Recovery Waveform and Definitions

5

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60EPU02PbF, 60APU02PbF

Bulletin PD-21079 08/05

Outline Table

60EPU02PbF

3. 65 (0.144)

3. 55 (0.139)

5. 30 (0.209)

4.70 ( 0.185)

DIA.

15.90 (0.626)

15.30 (0.602)

2.5 ( 0.098)

1.5 ( 0.059)

5. 70 (0.225)

5.30 ( 0.208)

BASE

COMMON

CATHODE

2

20.30 (0.800)

19.70 (0.775)

5.50 ( 0.217)

4.50 (0.177)

(2 PLCS.)

1

3

1

3

CATHODE

ANODE

14. 80 (0.583)

14.20 (0.559)

4. 30 (0.170)

3. 70 (0.145)

2. 20 (0.087)

MAX.

2.40 (0.095)

MAX.

1. 40 (0.056)

1. 00 (0.039)

0.80 ( 0.032)

0. 40 (0.213)

10. 94 ( 0.430)

10.86 (0.427)

Dimensionsinmillimetersandinches

60APU02PbF

3. 65 (0.144)

BASE

COMMON

CATHODE

2

5. 30 (0.209)

4.70 ( 0.185)

DIA.

15.90 (0.626)

15.30 (0.602)

3. 55 (0.139)

2.5 ( 0.098)

1.5 ( 0.059)

5. 70 (0.225)

5.30 ( 0.208)

20.30 (0.800 )

19.70 (0.775 )

ANODE

1

ANODE

3

5.50 ( 0.217)

4. 50 (0.177)

(2 PLCS.)

1

2

3

14. 80 ( 0.583)

14.20 (0.559 )

4. 30 (0.170)

3. 70 (0.145)

2. 20 (0.087)

MAX.

2. 40 (0.095)

MAX.

1. 40 (0.05 6)

1. 00 (0.03 9)

0.80 ( 0.032)

0. 40 (0.213)

10. 94 ( 0.430)

10.86 (0.427)

6

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60EPU02PbF, 60APU02PbF

Bulletin PD-21079 08/05

Marking Information

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

60EPU02

EXAMPLE: THIS IS A 60EPU02

WITH ASSEMBLY

P035H

57

56

LOT CODE 5657

ASSEMBLED ON WW 35, 2000

IN ASSEMBLY LINE "H"

DATE CODE

P = LEAD-FREE

YEAR 0 = 2000

WEEK 35

ASSEMBLY

LOT CODE

LINE H

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

60APU02

THIS IS A 60APU02

EXAMPLE:

P035H

WITH ASSEMBLY

56

57

LOT CODE 5657

DATE CODE

P = LEAD-FREE

YEAR 0 = 2000

WEEK 35

ASSEMBLY

LOT CODE

ASSEMBLED ON WW 35, 2000

IN ASSEMBLY LINE "H"

LINE H

Ordering Information Table

Device Code

60

E

P

U

02 PbF

2

4

5

6

1

3

1

2

-

Current Rating (60 = 60A)

Circuit Configuration:

E = Single Diode

A = Single Diode, 3 pins

Package:

P = TO-247AC (Modified)

Type of Silicon:

3

4

-

U = UltraFast Recovery

5

6

-

Voltage Rating (02 = 200V)

ꢂnone = Standard Production

ꢂPbF = Lead-Free

7

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60EPU02PbF, 60APU02PbF

Bulletin PD-21079 08/05

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level and Lead-Free.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 08/05

8

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型号:	60EPU02PBF
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	VISHAY INTERTECHNOLOGY INC
零件包装代码：	TO-247AC
包装说明：	R-PSFM-T2
针数：	2
Reach Compliance Code：	compliant
HTS代码：	8541.10.00.80
风险等级：	8.1
Is Samacsys：	N
应用：	ULTRA FAST SOFT RECOVERY HIGH POWER
外壳连接：	CATHODE
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.88 V
JESD-30 代码：	R-PSFM-T2
JESD-609代码：	e3
最大非重复峰值正向电流：	800 A
元件数量：	1
相数：	1
端子数量：	2
最高工作温度：	175 °C
最低工作温度：	-55 °C
最大输出电流：	60 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT APPLICABLE
认证状态：	Not Qualified
最大重复峰值反向电压：	200 V
最大反向恢复时间：	0.035 µs
子类别：	Rectifier Diodes
表面贴装：	NO
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT APPLICABLE
Base Number Matches：	1

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