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芯片6ED003L02-F的概述 6ED003L02-F是一款由西门子（Siemens）公司推出的强大和多功能的驱动器控制芯片。基于高效能的技术设计，该芯片主要用于各种电机控制应用，特别是在工业自动化与电机驱动领域中。6ED003L02-F能够实现高效能的信号处理，具有多种应用场景，能够满足现代工业对电机控制高精度、低功耗及可扩展性的需求。该芯片内置数字信号处理单元（DSP）、多个PWM（脉宽调制）输出端口，能够支持多相电机驱动。它的设计不仅考虑到了功能的全面性，同时也强调了电源管理和散热稳定等方面的性能。随着智能化和自动化的发展，像6ED003L02-F这样的驱动控制芯片为工业生产提供了广泛的应用和技术支持。芯片6ED003L02-F的详细参数 6ED003L02-F的功能和性能参数如下： 1. 工作电压范围：6ED003L02-F支持较宽的工作电压范围，通常在15V到30V之间...

产品型号6ED003L02-F2的Datasheet PDF文件预览

EiceDRIVER™

High voltage gate driver IC

6ED family - 2nd generation

3 phase 600 V gate drive IC

6ED003L06-F2

6ED003L02-F2

EiceDRIVER™

datasheet

<Revision 2.5>, 21.01.2013

Industrial Power & Control

Edition 21.01.2013

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life

support devices or systems are intended to be implanted in the human body or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

Revision History

Page or Item

Subjects (major changes since previous revision)

<Revision 2.5>, 21.01.2013

p. 8

revised Figure 1

p. 20

revised Figure 8

Trademarks of Infineon Technologies AG

AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™,

CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™,

EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,

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Other Trademarks

Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,

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AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.

COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™

of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.

HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™

of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR

STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.

MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc.

MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE

OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc.

Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of

Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd.

Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc.

TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company

Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments

Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex

Limited.

Last Trademarks Update 2010-10-26

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

Table of Contents

Overview .............................................................................................................................................7

Blockdiagram......................................................................................................................................8

Pin configuration, description, and functionality ...........................................................................9

Low Side and High Side Control Pins (Pin 2, 3, 4, 5, 6, 7) ..................................................................9

EN (Gate Driver Enable, Pin 10)........................................................................................................10

FAULT (Fault Feedback, Pin 8) .........................................................................................................10

ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11) .........................................................11

VCC, VSS and COM (Low Side Supply, Pin 1, 12,13) ......................................................................11

VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28) .............................................11

LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27) ...............................11

3.1

3.2

3.3

3.4

3.5

3.6

3.7

Electrical Parameters.......................................................................................................................12

Absolute Maximum Ratings ...............................................................................................................12

Required operation conditions ...........................................................................................................13

Operating Range................................................................................................................................13

Static logic function table ...................................................................................................................14

Static parameters ...............................................................................................................................14

Dynamic parameters..........................................................................................................................16

4.1

4.2

4.3

4.4

4.5

4.6

Timing diagrams...............................................................................................................................17

6.1

6.2

Package.............................................................................................................................................19

PG-DSO-28........................................................................................................................................19

PG-TSSOP-28....................................................................................................................................20

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

List of Figures

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Typical Application ...............................................................................................................................8

Block diagram for 6ED003L06-F2 / 6ED003L02-F2 ............................................................................8

Pin Configuration of 6ED003L06-F2 and 6ED003L02-F2 ...................................................................9

Input pin structure...............................................................................................................................10

Input filter timing diagram...................................................................................................................10

EN pin structures................................................................................................................................10

FAULT pin structures .........................................................................................................................11

Timing of short pulse suppression .....................................................................................................17

Timing of internal deadtime................................................................................................................17

Figure 10 Enable delay time definition ...............................................................................................................17

Figure 11 Input to output propagation delay times and switching times definition.............................................18

Figure 12 Operating areas..................................................................................................................................18

Figure 13 ITRIP-Timing ......................................................................................................................................18

Figure 14 Package drawing................................................................................................................................19

Figure 15 PCB reference layout .........................................................................................................................19

Figure 16 Package drawing................................................................................................................................20

Figure 17 PCB reference layout (according to JEDEC 1s0P) left: Reference layout right: detail of footprint20

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

List of Tables

Table 1

Table 2

Table 3

Table 4

Table 5

Table 6

Table 7

Table 8

Members of 6ED family – 2^ndgeneration .............................................................................................7

Pin Description .....................................................................................................................................9

Abs. maximum ratings........................................................................................................................12

Required Operation Conditions..........................................................................................................13

Operating range .................................................................................................................................13

Static parameters ...............................................................................................................................14

Dynamic parameters..........................................................................................................................16

Data of reference layout.....................................................................................................................20

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

EiceDRIVER™

3 phase 600 V gate drive IC

Overview

Main features



Thin-film-SOI-technology

PG-DSO28

Maximum blocking voltage +600V

Separate control circuits for all six drivers

CMOS and LSTTL compatible input (negative logic)

Signal interlocking of every phase to prevent cross-conduction

Detection of over current and under voltage supply

externally programmable delay for fault clear after over current

detection

PG-TSSOP28

Product highlights



Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology

'shut down' of all switches during error conditions

Typical applications



Home appliances

Fans, pumps

General purpose drives

Product family

Table 1

Members of 6ED family – 2^ndgeneration

high side control input typ. UVLO-

HIN1,2,3 and LIN1,2,3 Thresholds

Sales Name

Bootstrap Package

diode

6ED003L06-F2 / 6ED003L02-F2 negative logic

11.7 V / 9.8 V No

DSO28 / TSSOP28

Description

The devices are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase systems

with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent

ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic

latch-up may occur at all temperatures and voltage conditions.

The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down

to 3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an over-

current detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin

ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down of all six switches. An

error signal is provided at the FAULT open drain output pin. The blocking time after over-current can be

adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 µA. Therefore,

the resistor R_RCINis optional. The typical output current can be given with 165 mA for pull-up and 375 mA for pull

down. Because of system safety reasons a 310 ns interlocking time has been realised. The function of input EN

can optionally be extended with an over-temperature detection, using an external NTC-resistor (see Fig.1).

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

DC-Bus

VCC

HIN1,2,3

LIN1,2,3

VCC

VB1,2,3

HO1,2,3

HIN1,2,3

LIN1,2,3

To Load

VS1,2,3

FAULT

RCIN

FAULT

LO1,2,3

COM

R_RCIN

C_RCIN

ITRIP

VSS

R_Sh

VSS

Figure 1

Typical Application

Blockdiagram

BIAS NETWORK / VDD2

INPUT NOISE

FILTER

BIAS NETWORK - VB1

HIN1

LIN1

DEADTIME &

SHOOT-THROUGH

PREVENTION

LATCH

Gate-

Drive

HV LEVEL-SHIFTER

+ REVERSE-DIODE

COMPAR

ATOR

UV-

DETECT

INPUT NOISE

FILTER

INPUT NOISE

FILTER

BIAS NETWORK - VB2

HIN2

LIN2

HIN3

LIN3

DEADTIME &

SHOOT-THROUGH

PREVENTION

LATCH

Gate-

Drive

HV LEVEL-SHIFTER

+ REVERSE-DIODE

COMPAR

ATOR

UV-

DETECT

INPUT NOISE

FILTER

INPUT NOISE

FILTER

BIAS NETWORK / VB3

DEADTIME &

SHOOT-THROUGH

PREVENTION

LATCH

Gate-

Drive

HV LEVEL-SHIFTER

+ REVERSE-DIODE

COMPAR

ATOR

UV-

DETECT

INPUT NOISE

FILTER

INPUT NOISE

FILTER

UV-

DETECT

VSS / COM

LEVEL-

SHIFTER

Gate-

Drive

DELAY

INPUT NOISE

FILTER

ITRIP

VSS / COM

LEVEL-

SHIFTER

Gate-

Drive

DELAY

VDD2

SET

DOMINANT

LATCH

IRCIN

VSS / COM

LEVEL-

SHIFTER

Gate-

Drive

RCIN

FAULT

Figure 2

Block diagram for 6ED003L06-F2 / 6ED003L02-F2

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

Pin configuration, description, and functionality

VCC

VB1 28

HO1 27

VS1 26

HIN1

HIN2

HIN3

LIN1

VB2 24

HO2 23

VS2 22

LIN2

LIN3

FAULT

ITRIP

VB3 20

HO3 19

VS3 18

10 EN

11 RCIN

12 VSS

13 COM

14 LO3

LO1 16

LO2 15

Figure 3

Pin Configuration of 6ED003L06-F2 and 6ED003L02-F2

Table 2

Symbol

VCC

Pin Description

Description

Low side power supply

Logic ground

VSS

/HIN1,2,3

/LIN1,2,3

/FAULT

High side logic input

Low side logic input

Indicates over-current and under-voltage (negative logic, open-drain output)

Enable I/O functionality (positive logic)

ITRIP

Analog input for over-current shut down, activates FAULT and RCIN to VSS

External RC-network to define FAULT clear delay after FAULT-Signal (T_FLTCLR

Low side gate driver reference

RCIN

)

COM

VB1,2,3

HO1,2,3

VS1,2,3

LO1,2,3

High side positive power supply

High side gate driver output

High side negative power supply

Low side gate driver output

Not connected

2.1

Low Side and High Side Control Pins (Pin 2, 3, 4, 5, 6, 7)

The Schmitt trigger input threshold of them are such to guarantee LSTTL and CMOS compatibility down to 3.3 V

controller outputs. Input Schmitt trigger and noise filter provide beneficial noise rejection to short input pulses

according to Figure 4 and Figure 5.

Vcc

Schmitt-Trigger

INPUT NOISE

FILTER

HINx

LINx

U_Z=10.5V

SWITCH LEVEL

V_IH; V_IL

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

Figure 4

Input pin structure

An internal pull-up of about 75 k (negative logic) pre-biases the input during supply start-up and a ESD zener

clamp is provided for pin protection purposes. The zener diodes are therefore designed for single pulse stress

only and not for continuous voltage stress over 10V.

t_FILIN

HIN

LIN

HIN

off

high

low

Figure 5

Input filter timing diagram

It is anyway recommended for proper work of the driver not to provide input pulse-width lower than 1 µs.

The 6ED-F2 driver IC provide additionally a shoot through prevention capability which avoids the simultaneous

on-state of two channels of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of

a same leg are activated, only one leg output is activated, so that the leg is kept steadily in a safe state. Please

refer to the application note AN-Gatedrive-6ED2-1 for a detailed description.

A minimum dead time insertion of typ. 310 ns is also provided, in order to reduce cross-conduction of the

external power switches.

2.2

EN (Gate Driver Enable, Pin 10)

The signal applied to pin EN controls directly the output stages. All outputs are set to LOW, if EN is at LOW

logic level. The internal structure of the pin is given in Figure 6. The switching levels of the Schmitt-Trigger are

here V_EN,TH+= 2.1 V and V_EN,TH-= 1.3 V. The typical propagation delay time is t_EN= 780 ns. There is an internal

pull down resistor (75 k), which keeps the gate outputs off in case of broken PCB connection.

I_EN+, I_EN-

INPUT NOISE

FILTER

V_EN,TH+

V_EN,TH-

V_Z= 10.5 V

6ED family – 2nd generation

Figure 6

EN pin structures

2.3

/FAULT (Fault Feedback, Pin 8)

/Fault pin is an active low open-drain output indicating the status of the gate driver (see Figure 7). The pin is

active (i.e. forces LOW voltage level) when one of the following conditions occur:



Under-voltage condition of VCC supply: In this case the fault condition is released as soon as the

supply voltage condition returns in the normal operation range (please refer to VCC pin description for

more details).



Over-current detection (ITRIP): The fault condition is latched until current trip condition is finished and

RCIN input is released (please refer to ITRIP pin).

6ED family –

2nd generation

V_DD

V_CC

R_ON,FLT

from ITRIP-Latch

from uv-detection

FAULT

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

Figure 7

/FAULT pin structures

2.4

ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11)

The 6ED family – 2^ndgeneration provides an over-current detection function by connecting the ITRIP input with

the motor current feedback. The ITRIP comparator threshold (typ 0.44 V) is referenced to VSS ground. A input

noise filter (typ. t_ITRIPMIN= 230 ns) prevents the driver to detect false over-current events.

Over-current detection generates a hard shut down of all outputs of the gate driver and provides a latched fault

feedback at /FAULT pin. RCIN input/output pin is used to determine the reset time of the fault condition. As

soon as ITRIP threshold is exceeded the external capacitor connected to RCIN is fully discharged. The

capacitor is then recharged by the RCIN current generator when the over-current condition is finished. As soon

as RCIN voltage exceeds the rising threshold of typ V_RCIN,TH= 5.2 V, the fault condition releases and the driver

returns operational following the ontrol input pins according to section 2.1. Please refer to AN-Gatedrive-6ED2-1

for details on setting RCIN time constant.

2.5

VCC, VSS and COM (Low Side Supply, Pin 1, 12,13)

VCC is the low side supply and it provides power both to input logic and to low side output power stage. Input

logic is referenced to VSS ground as well as the under-voltage detection circuit. Output power stage is

referenced to COM ground. COM ground is floating respect to VSS ground with a maximum range of operation

of +/-5.7 V. A back-to-back zener structure protects grounds from noise spikes.

The under-voltage circuit enables the device to operate at power on when a typical supply voltage higher than

V_CCUV+is present.

The IC shuts down all the gate drivers power outputs, when the VCC supply voltage is below V_CCUV-= 9.8 V.

This prevents the external power switches from critically low gate voltage levels during on-state and therefore

from excessive power dissipation. Please consult the individual output characteristic of the driven transistor.

2.6

VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28)

VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the

external high side power device emitter/source voltage. Due to the low power consumption, the floating driver

stage can be supplied by bootstrap topology connected to VCC.

The device operating area as a function of the supply voltage is given in Figure 12. Details on bootstrap supply

section and transient immunity can be found in application note AN-Gatedrive-6ED2-1.

2.7

LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27)

Low side and high side power outputs are specifically designed for pulse operation such as gate drive of IGBT

and MOSFET devices. Low side outputs (i.e. LO1,2,3) are state triggered by the respective inputs, while high

side outputs (i.e. HO1,2,3) are edge triggered by the respective inputs. In particular, after an under voltage

condition of the VBS supply, a new turn-on signal (edge) is necessary to activate the respective high side

output, while after a under voltage condition of the VCC supply, the low side outputs switch to the state of their

respective inputs.

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

Electrical Parameters

3.1

Absolute Maximum Ratings

All voltages are absolute voltages referenced to V_SS-potential unless otherwise specified. (T_a=25°C)

Table 3

Abs. maximum ratings

Parameter

Symbol Min.

Max.

Unit

V_S

High side offset voltage(Note 1)

DSO28

TSSOP28

V_CC-V_BS-6

600

180

High side offset voltage (t_p<500ns, Note 1)

V_CC-V_BS– 50 –

V_B

High side offset voltage(Note 1)

DSO28

TSSOP28

V_CC– 6

620

200

High side offset voltage (t_p<500ns, Note 1)

V_CC– 50

-1

–

High side floating supply voltage (V_Bvs. V_S) (internally clamped) V_BS

High side output voltage (V_HOvs. V_S)

V_HO

-0.5

-1

V_B+ 0.5

V_CC

Low side supply voltage (internally clamped)

Low side supply voltage (V_CCvs. V_COM

)

V_CCOM

V_COM

V_LO

-0.5

-5.7

-0.5

-1

Gate driver ground

5.7

Low side output voltage (V_LOvs. V_COM

Input voltage /LIN, /HIN, EN, ITRIP

FAULT output voltage

)

V_CCOM+ 0.5

V_IN

V_FLT

V_RCIN

P_D

V_CC+ 0.5

-0.5

RCIN output voltage

–

Power dissipation (to package) Note 2

DSO28

TSSOP28

1.3

0.6

R_th(j-a)

–

Thermal resistance

(junction to ambient, see section 5)

DSO28

TSSOP28

165

K/W

°C

T_J

–

Junction temperature

125

150

T_S

Storage temperature

- 40

dV_S/dt

offset voltage slew rate (Note 3)

V/ns

Note :The value for ESD immunity is 1.0kV (Human Body Model). ESD immunity for pins inside the low side (i.e. VCC, /HINx, /LINx, FAULT,

EN, RCIN, ITRIP, VSS, COM, LOx) and ESD immunity for pins inside each high side itself (i.e. VBx, HOx, VSx) is guaranteed up to 1.5kV

(Human Body Model).

Note 1 : Insensitivity of bridge output to negative transient voltage up to –50V is not subject to production test – verified by design /

characterization. External bootstrap diode is mandatory. Refer to application note.

Note 2: Consistent power dissipation of all outputs. All parameters inside operating range.

Note 3: Not subject of production test, verified by characterisation

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

3.2

Required operation conditions

All voltages are absolute voltages referenced to V_SS-potential unless otherwise specified. (T_a= 25°C)

Table 4

Required Operation Conditions

Parameter

Symbol Min.

Max. Unit

V_B

High side offset voltage (Note 1)

DSO28

TSSOP28

620

200

Low side supply voltage (V_CCvs. V_COM

)

DSO28

TSSOP28

V_CCOM

3.3

Operating Range

All voltages are absolute voltages referenced to V_SS-potential unless otherwise specified. (T_a= 25°C)

Table 5

Operating range

Parameter

Symbol Min.

Max. Unit

V_S

V_CC-

High side floating supply offset voltage

V_BS-1

-1.0

500

High side floating supply offset voltage (V_Bvs. V_CC, statically)

High side floating supply voltage (V_Bvs. V_S, Note 1)

High side output voltage (V_HOvs. V_S)

V_BCC

V_BS

V_HO

V_LO

V_CC

V_COM

V_IN

500

17.5

V_BS

V_CC

17.5

2.5

Low side output voltage (V_LOvs. V_COM

Low side supply voltage

)

-2.5

Low side ground voltage

Logic input voltages /LIN, /HIN, EN, ITRIP (Note 2)

FAULT output voltage

V_FLT

V_RCIN

t_IN

V_CC

RCIN input voltage

Pulse width for ON or OFF (Note 3)

Ambient temperature

–

µs

°C

T_a

-40

Note 1 : Logic operational for V_B(V_Bvs. V_SS) > 7,0V

Note 2 : All input pins (/HINx, /LINx) and EN, ITRIP pin are internally clamped (see abs. maximum ratings)

Note 3 : In case of input pulse width at /LINx and /HINx below 1µs the input pulse may not be transmitted properly

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

3.4

Static logic function table

VCC

VBS

RCIN

ITRIP

ENABLE

FAULT

LO1,2,3

HO1,2,3

<V_CCUV–

15V

<V_BSUV–

15V

3.3 V

High imp

/LIN1,2,3

15V

<3.2 V 

> V_IT,TH+

15V

/LIN1,2,3

/HIN1,2,3

> V_RCIN,TH

15V

High imp

15V

3.5

Static parameters

V_CC= V_BS= 15V unless otherwise specified. (T_a=25°C)

Table 6

Static parameters

Parameter

Symbol

Values

Unit Test condition

Min.

1.7

0.7

1.9

1.1

380

Typ.

2.1

0.9

2.1

1.3

445

Max.

2.4

V_IH

High level input voltage

Low level input voltage

EN positive going threshold

EN negative going threshold

ITRIP positive going threshold

ITRIP input hysteresis

V_IL

1.1

V_EN,TH+

V_EN,TH-

V_IT,TH+

V_IT,HYS

V_RCIN,TH

V_RCIN,HYS

V_IN,CLMAP

2.3

1.5

510

RCIN positive going threshold

RCIN input hysteresis

5.2

2.0

10.3

6.4

Input clamp voltage

I_IN= 4mA

(/HIN, /LIN, EN, ITRIP)

Input clamp voltage at high impedance

(/HIN, /LIN)

V_IN,FLOAT

V_OH

5.3

5.8

controller output

pin floating

High level output voltage

LO1,2,3

V_CC-0.7 V_CC-1.4

V_B-0.7 V_B-1.4

I_O= 20mA

HO1,2,3

LO1,2,3

V_OL

V_COM

V_COM+

I_O= -20mA

Low level output voltage

0.2

0.6

V_S+ 0.2 V_S+ 0.6

HO1,2,3

V_CCand V_BSsupply undervoltage positive

going threshold

V_CCUV+

V_BSUV+

11.7

12.5

V_CCand V_BSsupply undervoltage negative

going threshold

V_CCUV–

V_BSUV–

9.5

1.2

9.8

10.8

V_CCand V_BSsupply undervoltage lockout

hysteresis

V_CCUVH

V_BSUVH

1.9

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

Table 6

Static parameters

Parameter

Symbol

Values

Unit Test condition

Min.

Typ.

Max.

12.5

I_LVS+

V_S= 600V

High side leakage current betw. VS and VSS

µA

T_J= 125°C,

V_S= 600V

High side leakage current betw. VS and VSS I_LVS+

T_J= 125°C

High side leakage current between VSx and I_LVS–

VSy (x=1,2,3 and y=1,2,3)

V_Sx- V_Sy= 600V

Quiescent current V_BSsupply (VB only)

Quiescent current V_CCsupply (VCC only)

Input bias current

I_QBS1

I_QBS2

I_QCC1

I_QCC2

I_LIN+

210

1.1

1.3

400

1.8

µA

HO=low

HO=high

mA V_LIN=float.

V_LIN=0, V_HIN=3.3 V

100

µA

V_LIN=3.3 V

I_LIN-

I_HIN+

I_HIN-

V_LIN=0

Input bias current

110

200

100

200

V_HIN=3.3 V

V_HIN=0

110

I_ITRIP+

I_EN+

V_ITRIP=3.3 V

V_ENABLE=3.3 V

V_RCIN= 2 V

Input bias current (ITRIP=high)

Input bias current (EN=high)

2.8

120

I_RCIN

Input bias current RCIN (internal current

source)

I_O+

Mean output current for load capacity

charging in range from 3 V (20%) to 6 V

(40%)

120

165

mA C_L=10 nF

I_Opk+

Peak output current turn on (single pulse)

240

375

R_L= 0 , t_p<10 µs

I_O-

Mean output current for load capacity

discharging in range from 12 V (80%) to 9 V

(60%)

250

C_L=10 nF

I_Opk-

Peak output current turn off (single pulse)

420

R_L= 0 , t_p<10 µs

V_RCIN=0.5 V

R_on,RCIN

RCIN low on resistance of the pull down

transistor

100

R_on,FLT

V_FAULT=0.5 V

FAULT low on resistance of the pull down

transistor

¹Not subject of production test, verified by characterisation

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

3.6

Dynamic parameters

V_CC= V_BS= 15 V, V_S= V_SS= V_COMunless otherwise specified. (T_A=25°C)

Table 7

Dynamic parameters

Parameter

Symbol

Values

Unit Test condition

Min.

400

360

Typ.

530

490

Max.

800

760

100

t_on

Turn-on propagation delay

Turn-off propagation delay

Turn-on rise time

V_LIN/HIN= 0 or 3.3 V

t_off

t_r

V_LIN/HIN= 0 or 3.3 V

C_L= 1 nF

t_f

Turn-off fall time

t_EN

V_EN=0

Shutdown propagation delay ENABLE

Shutdown propagation delay ITRIP

Input filter time ITRIP

780

670

230

420

300

600

1.9

1100

1000

380

700

t_ITRIP

t_ITRIPMIN

t_FLT

V_ITRIP=1 V

400

155

Propagation delay ITRIP to FAULT

Input filter time at LIN/HIN for turn on and off

Input filter time EN

t_FILIN

t_FILEN

t_FLTCLR

V_LIN/HIN= 0 & 3.3 V

120

300

1.0

V_LIN/HIN= 0 & 3.3 V

V_ITRIP= 0

Fault clear time at RCIN after ITRIP-fault,

(C_RCin=1nF)

3.0

Dead time

150

310

V_LIN/HIN= 0 & 3.3 V

Matching delay ON, max(ton)-min(ton), ton MT_ON

are applicable to all 6 driver outputs

100

external dead time

> 500 ns

Matching delay OFF, max(toff)-min(toff), toff MT_OFF

are applicable to all 6 driver outputs

100

external dead time

>500 ns

Output pulse width matching. Pw_in-PW_out

PW_in> 1 µs

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

Timing diagrams

t_FILIN

t_IN

t_FILIN

t_IN

HIN/LIN

HO/LO

HIN/LIN

HO/LO

t_IN< t_FILIN

high

HO/LO

HIN/LIN

HO/LO

low

t_IN

t_IN> t_FILIN

Figure 8

Timing of short pulse suppression

LIN1,2,3

2.5V

HIN1,2,3

HO1,2,3

12V

12 V

LO1,2,3

Figure 9

Timing of internal deadtime

t_EN

HO1,2,3

LO1,2,3

Figure 10 Enable delay time definition

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

PW_IN

LIN1,2,3

HIN1,2,3

1.65V

t_off

t_on

t_r

t_f

12V

HO1,2,3

LO1,2,3

PW_OUT

Figure 11 Input to output propagation delay times and switching times definition

V_CCMAX, V_BSMAX

17.5

v_CC

v_BS

V_CCUV+, V_BSUV+11.7

V_CCUV-, V_BSUV-9.8

IC STATE

Recommended

Area

Recommended

Area

Forbidden

Area

OFF

Figure 12 Operating areas

V_RCIN,TH

RCIN

ITRIP

0.1V

FAULT

0.5V

t_FLT

t_FLTCLR

Any

output

t_ITRIP

Figure 13 ITRIP-Timing

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

Package

5.1

PG-DSO-28

Figure 14 Package drawing

Dimensions

Material

80.0  80.0  1.5 mm³

_therm[W/mK]

FR4

0.3

Metal (Copper) 70µm

388

Figure 15 PCB reference layout

datasheet

<Revision 2.5>, 21.01.2013

EiceDRIVER(TM)

6ED003L06-F2, 6ED003L02-F2

5.2

PG-TSSOP-28

Footprint for Reflow soldering

e = 0.65

A = 6.10

L = 1.30

B = 0.40

Figure 16 Package drawing

Figure 17 PCB reference layout (according to JEDEC 1s0P)

left: Reference layout

right: detail of footprint

Table 8

Data of reference layout

Dimensions

Material

Metal (Copper)

76.2  114.3  1.5 mm³

FR4 (_therm= 0.3 W/mK)

70µm (_therm= 388 W/mK)

datasheet

<Revision 2.5>, 21.01.2013

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG

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6ED003L02-F产品参数

型号:	6ED003L02-F
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	INFINEON TECHNOLOGIES AG
零件包装代码：	SSOP
包装说明：	TSSOP, TSSOP28,.25
针数：	28
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	5.73
高边驱动器：	YES
接口集成电路类型：	FULL BRIDGE BASED MOSFET DRIVER
JESD-30 代码：	R-PDSO-G28
长度：	9.7 mm
功能数量：	1
端子数量：	28
最高工作温度：	95 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP
封装等效代码：	TSSOP28,.25
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	15 V
认证状态：	Not Qualified
座面最大高度：	1.2 mm
子类别：	Peripheral Drivers
最大供电电压：	17.5 V
最小供电电压：	13 V
标称供电电压：	15 V
表面贴装：	YES
温度等级：	INDUSTRIAL
端子形式：	GULL WING
端子节距：	0.65 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	0.8 µs
接通时间：	0.8 µs
宽度：	4.4 mm
Base Number Matches：	1

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