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产品型号6ED003L02-F2的概述

芯片6ED003L02-F2的概述及详细参数 一、芯片概述 6ED003L02-F2是西门子(Siemens)公司生产的一款集成电路,主要用于工业自动化和控制系统中。该芯片属于电机控制和驱动领域,具备强大的功能和灵活的应用场景。随着现代工业对自动化水平的不断提升,6ED003L02-F2在高效、精确控制电机和设备运行方面显示出了显著的优势。 此芯片支持多种电流、速度和位置控制方式,广泛用于伺服电机、步进电机领域。在设计过程中,6ED003L02-F2被充分考虑到长时间的稳定性与可靠性,适用于各种恶劣环境,确保其在复杂应用中依然能够保持良好的性能。 二、详细参数 1. 基本参数 - 工作电压: 12V 到 60V - 最大输出电流: 20A - 控制方式: PWM(脉宽调制)控制 - 支持的电机类型: 直流无刷电机、步进电机 - 接口类型: SPI和UART - 温度范围: -40°...

产品型号6ED003L02-F2的Datasheet PDF文件预览

EiceDRIVER™  
High voltage gate driver IC  
6ED family - 2nd generation  
3 phase 600 V gate drive IC  
6ED003L06-F2  
6ED003L02-F2  
EiceDRIVER™  
datasheet  
<Revision 2.5>, 21.01.2013  
Industrial Power & Control  
Edition 21.01.2013  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2013 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or  
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any  
information regarding the application of the device, Infineon Technologies hereby disclaims any and all  
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual  
property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in  
question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the  
failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life  
support devices or systems are intended to be implanted in the human body or to support and/or maintain and  
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other  
persons may be endangered.  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
Revision History  
Page or Item  
Subjects (major changes since previous revision)  
<Revision 2.5>, 21.01.2013  
p. 8  
revised Figure 1  
p. 20  
revised Figure 8  
Trademarks of Infineon Technologies AG  
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™,  
CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™,  
EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,  
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™,  
PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™,  
SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,  
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.  
Other Trademarks  
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,  
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by  
AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.  
COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™  
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.  
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™  
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR  
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.  
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc.  
MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE  
OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc.  
Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of  
Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd.  
Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc.  
TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company  
Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments  
Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex  
Limited.  
Last Trademarks Update 2010-10-26  
datasheet  
3
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
Table of Contents  
1
Overview .............................................................................................................................................7  
2
Blockdiagram......................................................................................................................................8  
3
Pin configuration, description, and functionality ...........................................................................9  
Low Side and High Side Control Pins (Pin 2, 3, 4, 5, 6, 7) ..................................................................9  
EN (Gate Driver Enable, Pin 10)........................................................................................................10  
FAULT (Fault Feedback, Pin 8) .........................................................................................................10  
ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11) .........................................................11  
VCC, VSS and COM (Low Side Supply, Pin 1, 12,13) ......................................................................11  
VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28) .............................................11  
LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27) ...............................11  
3.1  
3.2  
3.3  
3.4  
3.5  
3.6  
3.7  
4
Electrical Parameters.......................................................................................................................12  
Absolute Maximum Ratings ...............................................................................................................12  
Required operation conditions ...........................................................................................................13  
Operating Range................................................................................................................................13  
Static logic function table ...................................................................................................................14  
Static parameters ...............................................................................................................................14  
Dynamic parameters..........................................................................................................................16  
4.1  
4.2  
4.3  
4.4  
4.5  
4.6  
5
Timing diagrams...............................................................................................................................17  
6
6.1  
6.2  
Package.............................................................................................................................................19  
PG-DSO-28........................................................................................................................................19  
PG-TSSOP-28....................................................................................................................................20  
datasheet  
4
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
List of Figures  
Figure 1  
Figure 2  
Figure 3  
Figure 4  
Figure 5  
Figure 6  
Figure 7  
Figure 8  
Figure 9  
Typical Application ...............................................................................................................................8  
Block diagram for 6ED003L06-F2 / 6ED003L02-F2 ............................................................................8  
Pin Configuration of 6ED003L06-F2 and 6ED003L02-F2 ...................................................................9  
Input pin structure...............................................................................................................................10  
Input filter timing diagram...................................................................................................................10  
EN pin structures................................................................................................................................10  
FAULT pin structures .........................................................................................................................11  
Timing of short pulse suppression .....................................................................................................17  
Timing of internal deadtime................................................................................................................17  
Figure 10 Enable delay time definition ...............................................................................................................17  
Figure 11 Input to output propagation delay times and switching times definition.............................................18  
Figure 12 Operating areas..................................................................................................................................18  
Figure 13 ITRIP-Timing ......................................................................................................................................18  
Figure 14 Package drawing................................................................................................................................19  
Figure 15 PCB reference layout .........................................................................................................................19  
Figure 16 Package drawing................................................................................................................................20  
Figure 17 PCB reference layout (according to JEDEC 1s0P) left: Reference layout right: detail of footprint20  
datasheet  
5
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
List of Tables  
Table 1  
Table 2  
Table 3  
Table 4  
Table 5  
Table 6  
Table 7  
Table 8  
Members of 6ED family 2nd generation .............................................................................................7  
Pin Description .....................................................................................................................................9  
Abs. maximum ratings........................................................................................................................12  
Required Operation Conditions..........................................................................................................13  
Operating range .................................................................................................................................13  
Static parameters ...............................................................................................................................14  
Dynamic parameters..........................................................................................................................16  
Data of reference layout.....................................................................................................................20  
datasheet  
6
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
EiceDRIVER  
3 phase 600 V gate drive IC  
1
Overview  
Main features  
Thin-film-SOI-technology  
PG-DSO28  
Maximum blocking voltage +600V  
Separate control circuits for all six drivers  
CMOS and LSTTL compatible input (negative logic)  
Signal interlocking of every phase to prevent cross-conduction  
Detection of over current and under voltage supply  
externally programmable delay for fault clear after over current  
detection  
PG-TSSOP28  
Product highlights  
Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology  
'shut down' of all switches during error conditions  
Typical applications  
Home appliances  
Fans, pumps  
General purpose drives  
Product family  
Table 1  
Members of 6ED family 2nd generation  
high side control input typ. UVLO-  
HIN1,2,3 and LIN1,2,3 Thresholds  
Sales Name  
Bootstrap Package  
diode  
6ED003L06-F2 / 6ED003L02-F2 negative logic  
11.7 V / 9.8 V No  
DSO28 / TSSOP28  
Description  
The devices are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase systems  
with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent  
ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic  
latch-up may occur at all temperatures and voltage conditions.  
The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down  
to 3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an over-  
current detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin  
ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down of all six switches. An  
error signal is provided at the FAULT open drain output pin. The blocking time after over-current can be  
adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 µA. Therefore,  
the resistor RRCIN is optional. The typical output current can be given with 165 mA for pull-up and 375 mA for pull  
down. Because of system safety reasons a 310 ns interlocking time has been realised. The function of input EN  
can optionally be extended with an over-temperature detection, using an external NTC-resistor (see Fig.1).  
datasheet  
7
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
DC-Bus  
VCC  
HIN1,2,3  
LIN1,2,3  
EN  
VCC  
VB1,2,3  
HO1,2,3  
HIN1,2,3  
LIN1,2,3  
EN  
To Load  
VS1,2,3  
5V  
FAULT  
RCIN  
FAULT  
LO1,2,3  
COM  
RRCIN  
CRCIN  
ITRIP  
VSS  
RSh  
VSS  
Figure 1  
Typical Application  
2
Blockdiagram  
BIAS NETWORK / VDD2  
VB  
INPUT NOISE  
FILTER  
BIAS NETWORK - VB1  
HIN1  
LIN1  
DEADTIME &  
SHOOT-THROUGH  
PREVENTION  
LATCH  
Gate-  
Drive  
HV LEVEL-SHIFTER  
+ REVERSE-DIODE  
COMPAR  
ATOR  
z
HO  
VS  
UV-  
DETECT  
INPUT NOISE  
FILTER  
VB  
INPUT NOISE  
FILTER  
BIAS NETWORK - VB2  
HIN2  
LIN2  
HIN3  
LIN3  
EN  
DEADTIME &  
SHOOT-THROUGH  
PREVENTION  
LATCH  
Gate-  
Drive  
HV LEVEL-SHIFTER  
+ REVERSE-DIODE  
COMPAR  
ATOR  
HO  
VS  
UV-  
DETECT  
INPUT NOISE  
FILTER  
INPUT NOISE  
FILTER  
VB  
HO  
VS  
BIAS NETWORK / VB3  
DEADTIME &  
SHOOT-THROUGH  
PREVENTION  
LATCH  
Gate-  
Drive  
HV LEVEL-SHIFTER  
+ REVERSE-DIODE  
COMPAR  
ATOR  
UV-  
DETECT  
INPUT NOISE  
FILTER  
>1  
INPUT NOISE  
FILTER  
VC  
LO  
UV-  
DETECT  
VSS / COM  
LEVEL-  
SHIFTER  
Gate-  
Drive  
DELAY  
INPUT NOISE  
FILTER  
ITRIP  
VSS / COM  
LEVEL-  
SHIFTER  
Gate-  
Drive  
DELAY  
DELAY  
LO  
S
Q
VDD2  
SET  
DOMINANT  
LATCH  
R
IRCIN  
VSS / COM  
LEVEL-  
SHIFTER  
Gate-  
Drive  
LO  
RCIN  
CO  
FAULT  
VS  
>1  
Figure 2  
Block diagram for 6ED003L06-F2 / 6ED003L02-F2  
datasheet  
8
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
Pin configuration, description, and functionality  
1
2
3
4
5
6
7
8
9
VCC  
VB1 28  
HO1 27  
VS1 26  
HIN1  
HIN2  
HIN3  
LIN1  
nc  
25  
VB2 24  
HO2 23  
VS2 22  
LIN2  
LIN3  
nc  
FAULT  
ITRIP  
21  
VB3 20  
HO3 19  
VS3 18  
10 EN  
11 RCIN  
12 VSS  
13 COM  
14 LO3  
17  
nc  
LO1 16  
LO2 15  
Figure 3  
Pin Configuration of 6ED003L06-F2 and 6ED003L02-F2  
Table 2  
Symbol  
VCC  
Pin Description  
Description  
Low side power supply  
Logic ground  
VSS  
/HIN1,2,3  
/LIN1,2,3  
/FAULT  
EN  
High side logic input  
Low side logic input  
Indicates over-current and under-voltage (negative logic, open-drain output)  
Enable I/O functionality (positive logic)  
ITRIP  
Analog input for over-current shut down, activates FAULT and RCIN to VSS  
External RC-network to define FAULT clear delay after FAULT-Signal (TFLTCLR  
Low side gate driver reference  
RCIN  
)
COM  
VB1,2,3  
HO1,2,3  
VS1,2,3  
LO1,2,3  
nc  
High side positive power supply  
High side gate driver output  
High side negative power supply  
Low side gate driver output  
Not connected  
2.1  
Low Side and High Side Control Pins (Pin 2, 3, 4, 5, 6, 7)  
The Schmitt trigger input threshold of them are such to guarantee LSTTL and CMOS compatibility down to 3.3 V  
controller outputs. Input Schmitt trigger and noise filter provide beneficial noise rejection to short input pulses  
according to Figure 4 and Figure 5.  
Vcc  
Schmitt-Trigger  
INPUT NOISE  
FILTER  
HINx  
LINx  
UZ=10.5V  
SWITCH LEVEL  
VIH; VIL  
datasheet  
9
<Revision 2.5>, 21.01.2013  
 
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
Figure 4  
Input pin structure  
An internal pull-up of about 75 k(negative logic) pre-biases the input during supply start-up and a ESD zener  
clamp is provided for pin protection purposes. The zener diodes are therefore designed for single pulse stress  
only and not for continuous voltage stress over 10V.  
tFILIN  
tFILIN  
HIN  
LIN  
LIN  
HIN  
on  
off  
on  
off  
on  
off  
high  
HO  
LO  
LO  
HO  
low  
Figure 5  
Input filter timing diagram  
It is anyway recommended for proper work of the driver not to provide input pulse-width lower than 1 µs.  
The 6ED-F2 driver IC provide additionally a shoot through prevention capability which avoids the simultaneous  
on-state of two channels of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of  
a same leg are activated, only one leg output is activated, so that the leg is kept steadily in a safe state. Please  
refer to the application note AN-Gatedrive-6ED2-1 for a detailed description.  
A minimum dead time insertion of typ. 310 ns is also provided, in order to reduce cross-conduction of the  
external power switches.  
2.2  
EN (Gate Driver Enable, Pin 10)  
The signal applied to pin EN controls directly the output stages. All outputs are set to LOW, if EN is at LOW  
logic level. The internal structure of the pin is given in Figure 6. The switching levels of the Schmitt-Trigger are  
here VEN,TH+ = 2.1 V and VEN,TH- = 1.3 V. The typical propagation delay time is tEN = 780 ns. There is an internal  
pull down resistor (75 k), which keeps the gate outputs off in case of broken PCB connection.  
IEN+, IEN-  
EN  
INPUT NOISE  
FILTER  
VEN,TH+  
VEN,TH-  
,
VZ= 10.5 V  
6ED family 2nd generation  
Figure 6  
EN pin structures  
2.3  
/FAULT (Fault Feedback, Pin 8)  
/Fault pin is an active low open-drain output indicating the status of the gate driver (see Figure 7). The pin is  
active (i.e. forces LOW voltage level) when one of the following conditions occur:  
Under-voltage condition of VCC supply: In this case the fault condition is released as soon as the  
supply voltage condition returns in the normal operation range (please refer to VCC pin description for  
more details).  
Over-current detection (ITRIP): The fault condition is latched until current trip condition is finished and  
RCIN input is released (please refer to ITRIP pin).  
6ED family –  
2nd generation  
VDD  
VCC  
RON,FLT  
from ITRIP-Latch  
from uv-detection  
FAULT  
>1  
datasheet  
10  
<Revision 2.5>, 21.01.2013  
 
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
Figure 7  
/FAULT pin structures  
2.4  
ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11)  
The 6ED family 2nd generation provides an over-current detection function by connecting the ITRIP input with  
the motor current feedback. The ITRIP comparator threshold (typ 0.44 V) is referenced to VSS ground. A input  
noise filter (typ. tITRIPMIN = 230 ns) prevents the driver to detect false over-current events.  
Over-current detection generates a hard shut down of all outputs of the gate driver and provides a latched fault  
feedback at /FAULT pin. RCIN input/output pin is used to determine the reset time of the fault condition. As  
soon as ITRIP threshold is exceeded the external capacitor connected to RCIN is fully discharged. The  
capacitor is then recharged by the RCIN current generator when the over-current condition is finished. As soon  
as RCIN voltage exceeds the rising threshold of typ VRCIN,TH = 5.2 V, the fault condition releases and the driver  
returns operational following the ontrol input pins according to section 2.1. Please refer to AN-Gatedrive-6ED2-1  
for details on setting RCIN time constant.  
2.5  
VCC, VSS and COM (Low Side Supply, Pin 1, 12,13)  
VCC is the low side supply and it provides power both to input logic and to low side output power stage. Input  
logic is referenced to VSS ground as well as the under-voltage detection circuit. Output power stage is  
referenced to COM ground. COM ground is floating respect to VSS ground with a maximum range of operation  
of +/-5.7 V. A back-to-back zener structure protects grounds from noise spikes.  
The under-voltage circuit enables the device to operate at power on when a typical supply voltage higher than  
VCCUV+ is present.  
The IC shuts down all the gate drivers power outputs, when the VCC supply voltage is below VCCUV- = 9.8 V.  
This prevents the external power switches from critically low gate voltage levels during on-state and therefore  
from excessive power dissipation. Please consult the individual output characteristic of the driven transistor.  
2.6  
VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28)  
VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the  
external high side power device emitter/source voltage. Due to the low power consumption, the floating driver  
stage can be supplied by bootstrap topology connected to VCC.  
The device operating area as a function of the supply voltage is given in Figure 12. Details on bootstrap supply  
section and transient immunity can be found in application note AN-Gatedrive-6ED2-1.  
2.7  
LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27)  
Low side and high side power outputs are specifically designed for pulse operation such as gate drive of IGBT  
and MOSFET devices. Low side outputs (i.e. LO1,2,3) are state triggered by the respective inputs, while high  
side outputs (i.e. HO1,2,3) are edge triggered by the respective inputs. In particular, after an under voltage  
condition of the VBS supply, a new turn-on signal (edge) is necessary to activate the respective high side  
output, while after a under voltage condition of the VCC supply, the low side outputs switch to the state of their  
respective inputs.  
datasheet  
11  
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
3
Electrical Parameters  
3.1  
Absolute Maximum Ratings  
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. (Ta=25°C)  
Table 3  
Abs. maximum ratings  
Parameter  
Symbol Min.  
Max.  
Unit  
VS  
High side offset voltage(Note 1)  
DSO28  
TSSOP28  
V
VCC-VBS-6  
600  
180  
High side offset voltage (tp<500ns, Note 1)  
VCC -VBS 50 –  
VB  
High side offset voltage(Note 1)  
DSO28  
TSSOP28  
VCC 6  
620  
200  
High side offset voltage (tp<500ns, Note 1)  
VCC 50  
-1  
High side floating supply voltage (VB vs. VS) (internally clamped) VBS  
20  
High side output voltage (VHO vs. VS)  
VHO  
-0.5  
-1  
VB + 0.5  
20  
VCC  
Low side supply voltage (internally clamped)  
Low side supply voltage (VCC vs. VCOM  
)
VCCOM  
VCOM  
VLO  
-0.5  
-5.7  
-0.5  
-1  
25  
Gate driver ground  
5.7  
Low side output voltage (VLO vs. VCOM  
Input voltage /LIN, /HIN, EN, ITRIP  
FAULT output voltage  
)
VCCOM + 0.5  
10  
VIN  
VFLT  
VRCIN  
PD  
VCC + 0.5  
VCC + 0.5  
-0.5  
-0.5  
RCIN output voltage  
Power dissipation (to package) Note 2  
DSO28  
TSSOP28  
1.3  
0.6  
W
Rth(j-a)  
Thermal resistance  
(junction to ambient, see section 5)  
DSO28  
TSSOP28  
75  
165  
K/W  
°C  
TJ  
Junction temperature  
125  
150  
50  
TS  
Storage temperature  
- 40  
dVS/dt  
offset voltage slew rate (Note 3)  
V/ns  
Note :The value for ESD immunity is 1.0kV (Human Body Model). ESD immunity for pins inside the low side (i.e. VCC, /HINx, /LINx, FAULT,  
EN, RCIN, ITRIP, VSS, COM, LOx) and ESD immunity for pins inside each high side itself (i.e. VBx, HOx, VSx) is guaranteed up to 1.5kV  
(Human Body Model).  
Note 1 : Insensitivity of bridge output to negative transient voltage up to 50V is not subject to production test verified by design /  
characterization. External bootstrap diode is mandatory. Refer to application note.  
Note 2: Consistent power dissipation of all outputs. All parameters inside operating range.  
Note 3: Not subject of production test, verified by characterisation  
datasheet  
12  
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
3.2  
Required operation conditions  
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. (Ta = 25°C)  
Table 4  
Required Operation Conditions  
Parameter  
Symbol Min.  
Max. Unit  
VB  
High side offset voltage (Note 1)  
DSO28  
TSSOP28  
V
7
620  
200  
Low side supply voltage (VCC vs. VCOM  
)
DSO28  
TSSOP28  
VCCOM  
10  
25  
3.3  
Operating Range  
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. (Ta = 25°C)  
Table 5  
Operating range  
Parameter  
Symbol Min.  
Max. Unit  
VS  
VCC -  
High side floating supply offset voltage  
V
VBS -1  
-1.0  
13  
10  
0
500  
High side floating supply offset voltage (VB vs. VCC, statically)  
High side floating supply voltage (VB vs. VS, Note 1)  
High side output voltage (VHO vs. VS)  
VBCC  
VBS  
VHO  
VLO  
VCC  
VCOM  
VIN  
500  
17.5  
VBS  
VCC  
17.5  
2.5  
5
Low side output voltage (VLO vs. VCOM  
Low side supply voltage  
)
13  
-2.5  
0
Low side ground voltage  
Logic input voltages /LIN, /HIN, EN, ITRIP (Note 2)  
FAULT output voltage  
VFLT  
VRCIN  
tIN  
VCC  
VCC  
0
RCIN input voltage  
0
Pulse width for ON or OFF (Note 3)  
Ambient temperature  
1
µs  
°C  
Ta  
-40  
95  
Note 1 : Logic operational for VB (VB vs. VSS) > 7,0V  
Note 2 : All input pins (/HINx, /LINx) and EN, ITRIP pin are internally clamped (see abs. maximum ratings)  
Note 3 : In case of input pulse width at /LINx and /HINx below 1µs the input pulse may not be transmitted properly  
datasheet  
13  
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
3.4  
Static logic function table  
VCC  
VBS  
X
RCIN  
X
ITRIP  
ENABLE  
X
FAULT  
LO1,2,3  
HO1,2,3  
<VCCUV  
15V  
X
0
0
0
<VBSUV–  
15V  
X
0
3.3 V  
3.3 V  
3.3 V  
3.3 V  
0
High imp  
0
/LIN1,2,3  
0
15V  
0
0
0
<3.2 V   
X
> VIT,TH+  
15V  
15V  
0
0
/LIN1,2,3  
0
0
/HIN1,2,3  
0
> VRCIN,TH  
> VRCIN,TH  
15V  
15V  
0
0
High imp  
High imp  
15V  
15V  
3.5  
Static parameters  
VCC = VBS = 15V unless otherwise specified. (Ta=25°C)  
Table 6  
Static parameters  
Parameter  
Symbol  
Values  
Unit Test condition  
Min.  
1.7  
0.7  
1.9  
1.1  
380  
45  
-
Typ.  
2.1  
0.9  
2.1  
1.3  
445  
70  
Max.  
2.4  
VIH  
High level input voltage  
Low level input voltage  
EN positive going threshold  
EN negative going threshold  
ITRIP positive going threshold  
ITRIP input hysteresis  
V
VIL  
1.1  
VEN,TH+  
VEN,TH-  
VIT,TH+  
VIT,HYS  
VRCIN,TH  
VRCIN,HYS  
VIN,CLMAP  
2.3  
1.5  
510  
mV  
RCIN positive going threshold  
RCIN input hysteresis  
5.2  
2.0  
10.3  
6.4  
-
V
-
Input clamp voltage  
9
12  
IIN = 4mA  
(/HIN, /LIN, EN, ITRIP)  
Input clamp voltage at high impedance  
(/HIN, /LIN)  
VIN,FLOAT  
VOH  
-
5.3  
5.8  
controller output  
pin floating  
High level output voltage  
LO1,2,3  
-
-
VCC -0.7 VCC -1.4  
VB -0.7 VB -1.4  
IO = 20mA  
HO1,2,3  
LO1,2,3  
VOL  
VCOM  
+
VCOM+  
IO = -20mA  
Low level output voltage  
-
0.2  
0.6  
VS+ 0.2 VS + 0.6  
HO1,2,3  
-
VCC and VBS supply undervoltage positive  
going threshold  
VCCUV+  
VBSUV+  
11  
11.7  
12.5  
VCC and VBS supply undervoltage negative  
going threshold  
VCCUV–  
VBSUV–  
9.5  
1.2  
9.8  
10.8  
V
VCC and VBS supply undervoltage lockout  
hysteresis  
VCCUVH  
VBSUVH  
1.9  
-
datasheet  
14  
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
Table 6  
Static parameters  
Parameter  
Symbol  
Values  
Unit Test condition  
Min.  
Typ.  
1
Max.  
12.5  
-
ILVS+  
VS = 600V  
High side leakage current betw. VS and VSS  
-
-
µA  
1
TJ = 125°C,  
VS = 600V  
High side leakage current betw. VS and VSS ILVS+  
10  
1
TJ = 125°C  
High side leakage current between VSx and ILVS–  
-
10  
-
VSy (x=1,2,3 and y=1,2,3)  
VSx - VSy = 600V  
Quiescent current VBS supply (VB only)  
Quiescent current VBS supply (VB only)  
Quiescent current VCC supply (VCC only)  
Quiescent current VCC supply (VCC only)  
Input bias current  
IQBS1  
IQBS2  
IQCC1  
IQCC2  
ILIN+  
-
-
-
-
-
210  
210  
1.1  
1.3  
70  
400  
400  
1.8  
2
µA  
HO=low  
HO=high  
mA VLIN=float.  
VLIN=0, VHIN=3.3 V  
100  
µA  
µA  
VLIN=3.3 V  
ILIN-  
IHIN+  
IHIN-  
VLIN=0  
Input bias current  
Input bias current  
Input bias current  
-
-
-
110  
70  
200  
100  
200  
VHIN=3.3 V  
VHIN=0  
110  
IITRIP+  
IEN+  
VITRIP=3.3 V  
VENABLE=3.3 V  
VRCIN = 2 V  
Input bias current (ITRIP=high)  
Input bias current (EN=high)  
45  
45  
2.8  
120  
120  
-
IRCIN  
Input bias current RCIN (internal current  
source)  
IO+  
Mean output current for load capacity  
charging in range from 3 V (20%) to 6 V  
(40%)  
120  
165  
-
-
mA CL=10 nF  
1
IOpk+  
Peak output current turn on (single pulse)  
240  
375  
RL = 0 , tp <10 µs  
IO-  
Mean output current for load capacity  
discharging in range from 12 V (80%) to 9 V  
(60%)  
250  
CL=10 nF  
1
IOpk-  
Peak output current turn off (single pulse)  
420  
40  
RL = 0 , tp <10 µs  
VRCIN=0.5 V  
Ron,RCIN  
RCIN low on resistance of the pull down  
transistor  
-
-
100  
100  
Ron,FLT  
VFAULT=0.5 V  
FAULT low on resistance of the pull down  
transistor  
45  
1 Not subject of production test, verified by characterisation  
datasheet  
15  
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
3.6  
Dynamic parameters  
VCC = VBS = 15 V, VS = VSS = VCOM unless otherwise specified. (TA=25°C)  
Table 7  
Dynamic parameters  
Parameter  
Symbol  
Values  
Unit Test condition  
Min.  
400  
360  
-
Typ.  
530  
490  
60  
Max.  
800  
760  
100  
45  
ton  
Turn-on propagation delay  
Turn-off propagation delay  
Turn-on rise time  
ns  
VLIN/HIN = 0 or 3.3 V  
toff  
tr  
VLIN/HIN = 0 or 3.3 V  
CL = 1 nF  
tf  
Turn-off fall time  
-
26  
tEN  
VEN=0  
Shutdown propagation delay ENABLE  
Shutdown propagation delay ITRIP  
Input filter time ITRIP  
-
780  
670  
230  
420  
300  
600  
1.9  
1100  
1000  
380  
700  
-
tITRIP  
tITRIPMIN  
tFLT  
VITRIP=1 V  
400  
155  
-
Propagation delay ITRIP to FAULT  
Input filter time at LIN/HIN for turn on and off  
Input filter time EN  
tFILIN  
tFILEN  
tFLTCLR  
VLIN/HIN = 0 & 3.3 V  
120  
300  
1.0  
-
VLIN/HIN = 0 & 3.3 V  
VITRIP = 0  
Fault clear time at RCIN after ITRIP-fault,  
(CRCin=1nF)  
3.0  
ms  
ns  
Dead time  
DT  
150  
-
310  
20  
-
VLIN/HIN = 0 & 3.3 V  
Matching delay ON, max(ton)-min(ton), ton MTON  
are applicable to all 6 driver outputs  
100  
external dead time  
> 500 ns  
Matching delay OFF, max(toff)-min(toff), toff MTOFF  
are applicable to all 6 driver outputs  
-
40  
40  
100  
100  
external dead time  
>500 ns  
Output pulse width matching. Pwin-PWout  
PM  
PWin > 1 µs  
datasheet  
16  
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
4
Timing diagrams  
tFILIN  
tIN  
tFILIN  
tIN  
HIN/LIN  
HIN/LIN  
HO/LO  
HIN/LIN  
HO/LO  
tIN < tFILIN  
tIN < tFILIN  
high  
HO/LO  
HIN/LIN  
HO/LO  
low  
tIN  
tIN  
tIN > tFILIN  
tIN > tFILIN  
Figure 8  
Timing of short pulse suppression  
LIN1,2,3  
2.5V  
2.5V  
HIN1,2,3  
HO1,2,3  
DT  
12V  
3V  
DT  
3V  
12 V  
LO1,2,3  
Figure 9  
Timing of internal deadtime  
EN  
tEN  
HO1,2,3  
LO1,2,3  
3V  
Figure 10 Enable delay time definition  
datasheet  
17  
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
PWIN  
LIN1,2,3  
HIN1,2,3  
1.65V  
1.65V  
toff  
ton  
tr  
tf  
12V  
12V  
HO1,2,3  
LO1,2,3  
3V  
3V  
PWOUT  
Figure 11 Input to output propagation delay times and switching times definition  
VCCMAX , VBSMAX  
20  
V
17.5  
vCC  
vBS  
13  
VCCUV+, VBSUV+ 11.7  
VCCUV-, VBSUV- 9.8  
t
IC STATE  
ON  
Recommended  
Area  
ON  
Recommended  
Area  
Forbidden  
Area  
OFF  
ON  
ON  
ON  
ON  
OFF  
Figure 12 Operating areas  
VRCIN,TH  
RCIN  
ITRIP  
0.1V  
0.1V  
FAULT  
1V  
0.5V  
tFLT  
tFLTCLR  
Any  
output  
3V  
tITRIP  
Figure 13 ITRIP-Timing  
datasheet  
18  
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
5
Package  
5.1  
PG-DSO-28  
Figure 14 Package drawing  
Dimensions  
Material  
80.0 80.0 1.5 mm³  
therm [W/mK]  
FR4  
0.3  
Metal (Copper) 70µm  
388  
Figure 15 PCB reference layout  
datasheet  
19  
<Revision 2.5>, 21.01.2013  
EiceDRIVER(TM)  
6ED003L06-F2, 6ED003L02-F2  
5.2  
PG-TSSOP-28  
Footprint for Reflow soldering  
e = 0.65  
A = 6.10  
L = 1.30  
B = 0.40  
Figure 16 Package drawing  
Figure 17 PCB reference layout (according to JEDEC 1s0P)  
left: Reference layout  
right: detail of footprint  
Table 8  
Data of reference layout  
Dimensions  
Material  
Metal (Copper)  
76.2 114.3 1.5 mm³  
FR4 (therm = 0.3 W/mK)  
70µm (therm = 388 W/mK)  
datasheet  
20  
<Revision 2.5>, 21.01.2013  
w w w . i n f i n e o n . c o m  
Published by Infineon Technologies AG  
配单直通车
6ED003L02-F2产品参数
型号:6ED003L02-F2
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
IHS 制造商:INFINEON TECHNOLOGIES AG
零件包装代码:SSOP
包装说明:TSSOP-28
针数:28
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8542.39.00.01
风险等级:1.73
高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G28
JESD-609代码:e3
长度:9.7 mm
湿度敏感等级:3
功能数量:1
端子数量:28
最高工作温度:95 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP
封装等效代码:TSSOP28,.25
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):NOT SPECIFIED
电源:15 V
认证状态:Not Qualified
座面最大高度:1.2 mm
子类别:Peripheral Drivers
最大供电电压:17.5 V
最小供电电压:13 V
标称供电电压:15 V
表面贴装:YES
技术:CMOS
温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)
端子形式:GULL WING
端子节距:0.65 mm
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.76 µs
接通时间:0.8 µs
宽度:4.4 mm
Base Number Matches:1
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