6MBP150RA120全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

6MBP150RA120

IGBT-IPM R series

1200V / 150A 6 in one-package

Features

· Temperature protection provided by directly detecting the junction

temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Symbol

Rating

Unit

Item

Min.

Max.

V

DC bus voltage

VDC

0

900

1000

800

1200

150

300

150

1040

150

20

V

DC bus voltage (surge)

DC bus voltage (short operating)

Collector-Emitter voltage

INV Collector current

VDC(surge)

VSC

0

V

200

V

VCES

IC

0

A

DC

-

A

1ms

DC

ICP

-

A

-IC

-

W

°C

V

Collector power dissipation One transistor

Junction temperature

PC

-

Tj

-

0

Input voltage of power supply for Pre-Driver

Input signal voltage

VCC *1

Vin *2

Iin

V

0

Vz

mA

V

Input signal current

-

1

Alarm signal voltage

VALM *3

IALM *4

Tstg

0

Vcc

15

mA

°C

kV

N·m

Alarm signal current

-

Storage temperature

-40

-20

-

125

100

AC2.5

3.5 *6

Fig.1 Measurement of case temperature

Operating case temperature

Isolating voltage (Case-Terminal)

Top

Viso *5

Screw torque

Mounting (M5)

Terminal (M5)

-

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.

*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.

*3 Apply VALM between terminal No. 16 and 10.

*4 Apply IALM to terminal No. 16.

*5 50Hz/60Hz sine wave 1 minute.

*6 Recommendable Value : 2.5 to 3.0 N·m

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item

INV

Symbol

Condition

VCE=1200V input terminal open

Min.

Typ.

Max.

1.0

Unit

mA

Collector current at off signal input

Collector-Emitter saturation voltage

Forward voltage of FWD

–

ICES

Ic=150A

-Ic=150A

2.6

3.0

V

VCE(sat)

VF

6MBP150RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item

Symbol Condition

Min.

3

Typ.

Max.

18

Unit

mA

V

fsw=0 to 15kHz Tc=-20 to 100°C *7

Iccp

Power supply current of P-line side Pre-driver(one unit)

Power supply current of N-line side three Pre-driver

Input signal threshold voltage (on/off)

-

fsw=0 to 15kHz Tc=-20 to 100°C *7

ICCN

Vin(th)

10

65

ON

1.00

1.70

1.35

1.70

OFF

V

2.05

8.0

2.40

Rin=20k ohm

V

VZ

Input zener voltage

-

VDC=0V, Ic=0A, Case temperature, Fig.1

°C

A

TCOH

TCH

TjOH

TjH

Over heating protection temperature level

Hysteresis

110

-

125

-

150

-

20

-

surface of IGBT chips

IGBT chips over heating protection temperature level

Hysteresis

-

20

Tj=125°C

IOC

Collector current protection level

Over current protection delay time

Under voltage protection level

Hysteresis

INV

225

-

Tj=25°C Fig.2

µs

V

tDOC

VUV

VH

10

11.0

-

12.5

V

0.2

1.5

-

ms

µs

ohm

tALM

tSC

Alarm signal hold time

2

-

Tj=25°C Fig.3

SC protection delay time

Limiting resistor for alarm

*7 Switching frequency of IPM

-

12

RALM

1425

1500

1575

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item

Symbol Condition

Min.

Typ.

Max.

Unit

µs

Switching time (IGBT)

Switching time (FWD)

ton

toff

trr

IC=150A, VDC=600V

0.3

-

3.6

µs

IF=150A, VDC=600V

0.4

µs

Thermal characteristics(Tc=25°C)

Item

Symbol

Rth(j-c)

Rth(c-f)

Typ.

Max.

0.12

Unit

Junction to Case thermal resistance

INV

IGBT

FWD

-

°C/W

0.29

-

Case to fin thermal resistance with compound

0.05

Recommendable value

Item

Symbol

Min.

200

13.5

Typ.

Max.

800

16.5

20

Unit

V

DC bus voltage

VDC

VCC

fSW

-

Operating power supply voltage range of Pre-driver

Switching frequency of IPM

15

-

V

1

kHz

N·m

Screw torque

Mounting (M5)

Terminal (M5)

2.5

-

3.0

-

3.0

6MBP150RA120

IGBT-IPM

Block diagram

Pre-drivers include following functions

a) Amplifier for driver

b) Short circuit protection

c) Undervoltage lockout circuit

d) Over current protection

e) IGBT chip over heating protection

Outline drawings, mm

Mass : 920g

6MBP150RA120

IGBT-IPM

Characteristics (Representative)

Control Circuit

Input signal threshold voltage

vs. Power supply voltage

Power supply current vs. Switching frequency

Tj=100°C

Tj=25°C

Tj=125°C

80

2.5

2

Vcc=17V

P-side

70

N-side

Vcc=15V

Vcc=13V

60

50

40

30

20

10

0

}

Vin(off)

Vin(on)

1.5

1

Vcc=17V

Vcc=15V

Vcc=13V

0.5

0

12

13

14

15

16

17

18

0

5

10

15

20

25

Power supply voltage : Vcc (V)

Switching frequency : fsw (kHz)

Under voltage vs. Junction temperature

Under voltage hysterisis vs. Jnction tem perature

14

12

10

8

1

0.8

0.6

0.4

0.2

0

6

4

2

0

20

40

60

80

100

120

140

20

40

60

80

100

120

140

Junction temperature : Tj (°C)

Junction tem perature : Tj (°C)

Over heating characteristics

TcOH,TjOH,TcH,TjH vs. Vcc

Alarm hold time vs. Power supply voltage

200

150

100

50

3

TjOH

2.5

2

Tj=125°C

Tj=25°C

TcOH

1.5

1

0.5

0

TcH,TjH

0

12

13

14

15

16

17

18

12

13

14

15

16

17

18

Power supply voltage : Vcc (V)

P ow er s upply voltage : V cc (V)

6MBP150RA120

IGBT-IPM

Inverter

Collector current vs. Collector-Em itter voltage

Tj=25°C

Collector current vs. Collector-Em itter voltage

Tj=125°C

250

200

150

100

50

250

Vcc=15V

Vcc=17V

200

150

100

50

Vcc=13V

0

0.5

1

1.5

2

2.5

3

3.5

0.5

1

1.5

2

2.5

3

3.5

Collector-Emitter voltage : Vce (V)

Switching tim e vs. Collector current

Edc=600V,Vcc=15V,Tj=25°C

Switching tim e vs. Collector current

Edc=600V,Vcc=15V,Tj=125°C

10000

1000

100

10000

1000

100

toff

ton

toff

ton

tf

10

0

50

100

150

200

250

0

50

100

150

200

250

Collector current : Ic (A)

Reverse recovery characteristics

trr,Irr vs. IF

trr125°C

Forward current vs. Forward voltage

125°C

250

200

150

100

50

25°C

100

trr25°C

Irr125°C

Irr25°C

10

0

0.5

1

1.5

2

2.5

3

0

50

100

150

200

250

Forward current : IF(A)

Forward voltage : Vf (V)

6MBP150RA120

IGBT-IPM

Reversed biased safe operating area

<

Transient therm al resistance

Vcc=15V,Tj 125°C

=

1

2100

1800

1500

1200

900

600

300

0

FW D

IGBT

0.1

SCSO A

(non-repetitive pulse)

0.01

RBSO A

(Repetitive pulse)

0.001

0.01

0.1

1

0

200

400

600

800 1000 1200 1400

Collector-Emitter voltage : Vce (V)

Pulse width :Pw (sec)

Power derating for IGBT

(per device)

Pow er derating for F W D

(per device)

1200

1000

800

600

400

200

0

500

400

300

200

100

0

20

40

60

80

100 120 140 160

0

20

40

60

80

100 120 140 160

Case Temperature : Tc (°C)

Case T emperature : Tc (°C )

Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,Tj=125°C

Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,Tj=25°C

60

50

40

30

20

10

0

60

50

40

30

20

10

0

Eon

Eoff

Err

Eoff

Err

0

50

100

150

200

250

0

50

100

150

200

250

C ollector current : Ic (A)

Collector current : Ic (A)

6MBP150RA120

IGBT-IPM

O ver current protection vs. Junction tem perature

V cc=15V

600

500

400

300

200

100

0

20

40

60

80

100

120

140

Junction tem perature : Tj(°C)

型号:	6MBP150RA120
生命周期：	Not Recommended
IHS 制造商：	FUJI ELECTRIC CO LTD
包装说明：	,
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	5.23
Is Samacsys：	N
模拟集成电路 - 其他类型：	AC MOTOR CONTROLLER
JESD-30 代码：	R-XQMA-X24
功能数量：	1
端子数量：	24
最大输出电流：	300 A
封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY
认证状态：	Not Qualified
最大供电电压 (Vsup)：	16.5 V
最小供电电压 (Vsup)：	13.5 V
标称供电电压 (Vsup)：	15 V
表面贴装：	NO
技术：	HYBRID
端子形式：	UNSPECIFIED
端子位置：	QUAD
Base Number Matches：	1

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